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MT9M031I12STC-DPBR1

Onsemi

MT9M031I12STC-DPBR1 by Onsemi

MT9M031I12STC-DPBR1 by Onsemi is a 3.75um CMOS image sensor with 1280x960 resolution, 64dB dynamic range, and 60fps frame rate. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high sensitivity and compact square package design.

Median Price

$35.160

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 960 parts In-Stock

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$35.160

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$35.160

$35.160

Flip Electronics (Authorized)

USA . 960 parts In-Stock

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960

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Vyrian

USA . 1,984 parts In-Stock

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Flip Electronics

USA . 960 parts In-Stock

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960

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Digiode

USA . 499 parts In-Stock

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499

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Distributors (Availability)

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Corohmni

South Africa . 484 parts In-Stock

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Problanco Electronics

Mexico . 6,497 parts In-Stock

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Kulean Microsystems

USA . 6,076 parts In-Stock

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SupplyDigital Components

Austria . 4,898 parts In-Stock

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TANS Electronics

Latvia . 3,288 parts In-Stock

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Corphita

USA . 1,440 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Overview

Capture every moment in stunning clarity with the MT9M031I12STC-DPBR1 Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional quality and reliability in every product they create. This image sensor is perfect for a wide range of applications, providing crisp images and vibrant colors. Experience the value and benefits of this cutting-edge technology, offering customers unmatched performance and versatility. Take your imaging capabilities to the next level with the MT9M031I12STC-DPBR1.Image Sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3.75

Provides high resolution images with fine details.

Maximum Supply Voltage: 1.95 V

Operates efficiently within safe voltage limits.

Master Clock: 50 MHz

Enables fast data processing and high frame rates.

Body Width: 10 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Utilizes CMOS technology for low power consumption and high sensitivity.

Package Shape or Style: SQUARE

Easily mountable and fits well within electronic designs.

Minimum Supply Voltage: 1.7 V

Allows for flexibility in power input while maintaining performance.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures for extended use.

Horizontal Pixel: 1280

Provides high resolution wide-angle images.

Output Type: DIGITAL VOLTAGE

Delivers clear and stable digital output signals.

Minimum Operating Temperature: -30 °C

Suitable for operating in cold environments without performance issues.

Maximum Operating Current: 55 mA

Efficient power usage for extended battery life in devices.

Dynamic Range: 64 dB

Captures a wide range of light intensities for accurate image rendering.

Vertical Pixel: 960

Enhances image quality with increased vertical resolution.

Body Length/Diameter: 10 mm

Compact and versatile dimensions for various mounting options.

Optical Format (inch): 1/3

Compatible with standard optical systems for easy integration.

Termination Type: SOLDER

Secure and reliable connections for long-term use.

Output Interface Type: 2-WIRE INTERFACE

Easy connectivity with other devices for data transfer.

Frame Rate: 60 fps

Delivers smooth and real-time video output.

Array Type: FRAME

Organized array structure for efficient data capture and processing.

Sensitivity (V/lx.s): 5.3 V/lx.s

High sensitivity for accurate image reproduction in various lighting conditions.

Mounting Feature: SURFACE MOUNT

Allows for easy and secure mounting on surfaces within devices.

Technical Specifications

Image Sensors MT9M031I12STC-DPBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.38 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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