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KAI-02170-FBA-JD-AE

Onsemi

KAI-02170-FBA-JD-AE by Onsemi

KAI-02170-FBA-JD-AE by Onsemi is an image sensor with 1920x1080 resolution, 7.4um pixel size, and 70.2dB dynamic range. It operates b/w -50 to 70 °C, suitable for industrial imaging applications requiring high-quality images in varying temperatures. The rectangular package style and through-hole mounting feature make it easy to integrate into different systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,680 parts In-Stock

1+ parts

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1k+ parts

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7,680

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Digiode

USA . 843 parts In-Stock

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843

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 228 parts In-Stock

1+ parts

$17.850

100+ parts

-

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228

$17.850

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Kulean Microsystems

USA . 7,654 parts In-Stock

1+ parts

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1k+ parts

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7,654

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SupplyDigital Components

Austria . 7,050 parts In-Stock

1+ parts

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7,050

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TANS Electronics

Latvia . 2,091 parts In-Stock

1+ parts

-

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2,091

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Corphita

USA . 1,870 parts In-Stock

1+ parts

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1,870

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Problanco Electronics

Mexico . 1,066 parts In-Stock

1+ parts

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1,066

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UHIMA Technologies

Türkiye . 905 parts In-Stock

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905

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Corohmni

South Africa . 453 parts In-Stock

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453

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Overview

Unleash the power of cutting-edge technology with the KAI-02170-FBA-JD-AE image sensor from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in every product they create. Designed for a wide range of applications, this image sensor offers unparalleled value and benefits to customers seeking high-performance imaging solutions. Elevate your projects to the next level with the superior advantages of the KAI-02170-FBA-JD-AE image sensor today.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 15.5 V

Allows for flexibility in power supply options and compatibility with a range of systems.

Body Width: 20.07 inch

Compact size makes it easy to integrate into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high image quality and low noise, making this a reliable choice.

Package Shape or Style: RECTANGULAR

Rectangular shape is commonly used and compatible with many mounting options.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption and extends battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures good performance in various environmental conditions.

Horizontal Pixel: 1920

High horizontal pixel count provides detailed and sharp images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold environments.

Dynamic Range: 70.2 dB

High dynamic range captures a wide range of light levels without overexposure or underexposure.

Vertical Pixel: 1080

High vertical pixel count contributes to the overall image quality and resolution.

Body Length/Diameter: 33.02 mm

Compact body size makes it easy to integrate into space-constrained applications.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection during installation.

Array Type: INTERLINE

Interline array design helps in reducing image lag and improving overall image quality.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure attachment to PCBs and other surfaces.

Technical Specifications

Image Sensors KAI-02170-FBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW AND 33 MICRO VOLT PER ELECTRON HIGH; ELECTRONIC SHUTTER; DYNAMIC RANGE, EXTENDED LINEAR OF 82.5

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

70.2 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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