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AR0147ATSC00XUEG0-DRBR

Onsemi

AR0147ATSC00XUEG0-DRBR by Onsemi

Onsemi's AR0147ATSC00XUEG0-DRBR is a 3x3 um CMOS image sensor with 1344H x 968V pixels, offering a dynamic range of 140 dB. It operates at temperatures from -40 to 110 °C and has a max supply voltage of 1.26 V. Ideal for applications requiring high-resolution imaging with digital output interface and frame rate of 60 fps.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,926 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 765 parts In-Stock

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$11.980

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Native Components

USA . 567 parts In-Stock

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$49.590

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Northwest PG Solutions

USA . 230 parts In-Stock

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$54.549

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SupplyDigital Components

Austria . 7,603 parts In-Stock

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TANS Electronics

Latvia . 7,454 parts In-Stock

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Problanco Electronics

Mexico . 3,257 parts In-Stock

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Kulean Microsystems

USA . 2,019 parts In-Stock

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Corphita

USA . 1,671 parts In-Stock

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UHIMA Technologies

Türkiye . 793 parts In-Stock

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Corohmni

South Africa . 365 parts In-Stock

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Overview

Elevate your imaging experience with the AR0147ATSC00XUEG0-DRBR by Onsemi. As a leader in image sensor technology, Onsemi delivers unparalleled quality and reliability in every product. This image sensor boasts a dynamic range of 140 dB and a frame rate of 60 fps, making it perfect for applications requiring high-resolution and fast response times. Whether you're capturing stunning visuals in security cameras or enhancing machine vision systems, this sensor offers exceptional value and performance. Trust Onsemi to elevate your imaging solutions to the next level.

Feature Benefit Bullets

Pixel Size (um): 3X3

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 1.26 V

Higher maximum supply voltage allows for better performance and stability of the image sensor.

Master Clock: 50 MHz

Fast master clock enables quick data processing and high frame rates for capturing moving objects.

Maximum Operating Temperature: 110 °C

Wide operating temperature range ensures reliability and functionality in various environmental conditions.

Output Type: DIGITAL VOLTAGE

Digital output simplifies integration with other digital systems and reduces noise interference.

Dynamic Range: 140 dB

High dynamic range allows the sensor to capture a wide range of light intensities, resulting in better quality images in challenging lighting conditions.

Frame Rate: 60 fps

High frame rate enables smooth video recording and fast image processing for real-time applications.

Technical Specifications

Image Sensors AR0147ATSC00XUEG0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

7 inch

Body Height:

1.5 mm

Body Length/Diameter:

8 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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