Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NX3020NAKT,115
NXP Semiconductors
NX3020NAKT,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 0.18 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into modern circuits.
SINGLE
.18 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
150 Cel
260
N-CHANNEL
.285 W
FET General Purpose Power
YES
TIN
30
PMGD130UN,115
PMGD130UN,115 by NXP Semiconductors is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 1.3 A and operates at up to 150 °C, ensuring reliability in demanding environments. Its surface mount design simplifies integration into compact circuits.
1.3 A
.39 W
PSMN5R0-100XS,127
PSMN5R0-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 67.5 A and power dissipation of 63.8 W, operating up to 175 °C. Perfect for automotive and industrial uses.
67.5 A
175 Cel
63.8 W
NO
PSMN4R6-100XS,127
PSMN4R6-100XS,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 70.4 A and power dissipation of 63.8 W, operating up to 175 °C. Perfect for automotive and industrial uses, it ensures reliable performance in demanding environments.
70.4 A
PSMN023-40YLCX
PSMN023-40YLCX by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 24 A, dissipates up to 25 W, and operates at temperatures up to 175 °C. Ideal for applications in power supplies and motor control.
24 A
25 W
BUK754R7-60E,127
NXP Semiconductors' BUK754R7-60E,127 is an N-channel Power FET with 100A max drain current and 234W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.
100 A
234 W
BUK9515-60E,127
BUK9515-60E,127 from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 54 A and power dissipation of 96 W, making it ideal for high-performance applications in automotive and industrial sectors. With an operating temp up to 175 °C, it ensures reliability in demanding environments.
54 A
96 W
BUK753R5-60E,127
BUK753R5-60E,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 293 W, operating efficiently up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
120 A
293 W
BUK956R1-100E,127
BUK956R1-100E,127 by NXP is a single N-channel power FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for efficient power management in various electronic devices.
349 W
PMZB380XN,315
PMZB380XN,315 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 0.93 A and power dissipation of 2.7 W, operating up to 150 °C. Ideal for efficient power management in compact devices.
.93 A
2.7 W
BUK9E1R8-40E,127
BUK9E1R8-40E,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
PMZB420UN,315
PMZB420UN,315 by NXP Semiconductors is an N-CHANNEL FET with 0.9A max drain current and 2.7W max power dissipation in enhancement mode. Ideal for applications requiring a surface-mount single configuration FET with a max operating temperature of 150°C, such as power management systems.
.9 A
PMDPB70EN,115
NXP Semiconductors' PMDPB70EN,115 is an N-CHANNEL Power FET with 3.5A max drain current and 8.33W power dissipation. Ideal for applications requiring high efficiency in a surface-mount package, such as power management systems or motor control circuits operating at up to 150°C.
3.5 A
8.33 W
PMPB40SNA,115
PMPB40SNA,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 12.9 A and operates at temperatures up to 150 °C, making it ideal for high-performance applications. Its surface mount configuration ensures easy integration into compact designs.
12.9 A
3.5 W
BUK952R8-60E,127
BUK952R8-60E,127 from NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
PMV170UN,215
PMV170UN,215 by NXP Semiconductors is a single N-channel Power FET with 1A max drain current and 1.14W max power dissipation. Ideal for applications requiring enhancement mode operation, such as power management systems in electronics.
1 A
1.14 W
PMDPB42UN,115
NXP Semiconductors' PMDPB42UN,115 is an N-CHANNEL Power FET with 3.9A max drain current and 8.33W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.
3.9 A
BUK7514-60E,127
BUK7514-60E,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 58 A and power dissipation of 96 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
58 A
PMV185XN,215
PMV185XN,215 by NXP Semiconductors is an N-CHANNEL FET with 1.1A max drain current and 1.275W power dissipation in enhancement mode. Ideal for applications requiring high efficiency and performance in a compact design at up to 150°C operating temperature.
1.1 A
1.275 W
PMF77XN,115
PMF77XN,115 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 1.63 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.
1.63 A
.35 W
PMZB300XN,315
PMZB300XN,315 by NXP Semiconductors is an N-CHANNEL FET with 1A max drain current and 0.715W power dissipation. Ideal for applications requiring a single configuration, surface mount capability, and operating in enhancement mode up to 150°C.
.715 W
PMT760EN,115
NXP Semiconductors' PMT760EN,115 is a N-CHANNEL FET with 0.9A ID and 6.2W power dissipation in enhancement mode. Ideal for applications requiring high drain current up to 150°C, such as power management systems.
6.2 W
PMT760EN,135
NXP Semiconductors' PMT760EN,135 is a N-CHANNEL FET with 0.9A ID and 6.2W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation at up to 150°C, this surface-mount transistor offers reliable performance in various power management systems.
PSMN8R5-100XSQ
PSMN8R5-100XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 49 A and power dissipation of 55 W, operating up to 175 °C. This transistor is perfect for automotive and industrial uses.
49 A
55 W
PMG45UN,115
PMG45UN,115 by NXP Semiconductors is an N-CHANNEL Power FET with 3A Max Drain Current and 0.715W Power Dissipation. It operates in ENHANCEMENT MODE at up to 150°C, suitable for various power management applications.
3 A
BLF3G21-6,135
BLF3G21-6,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.3 A and operates up to 200 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration ensures easy integration into compact designs.
2.3 A
200 Cel
BLF1043,135
BLF1043,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for high-temperature applications in electronics. This surface-mount transistor excels in power amplification and switching tasks.
2.2 A
FET General Purpose Powers
BLF8G20LS-400PVQ
N-CHANNEL; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 225 Cel;
225 Cel
PMZ290UNYL
PMZ290UNYL by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 1 A, power dissipation of 2.7 W, and operates up to 150 °C. Its surface mount design enhances versatility in circuit integration.
PSMN3R9-60XSQ
PSMN3R9-60XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 75 A and power dissipation of 55 W, operating up to 175 °C. Perfect for automotive and industrial uses.
75 A
BLC6G22LS-75,112
BLC6G22LS-75,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and operates up to 150 °C, making it ideal for high-performance power applications in compact designs.
18 A
BLF1822-10,112
BLF1822-10,112 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it suitable for demanding environments in RF amplification. This MOSFET excels in efficiency and thermal performance.
BLF2043,112
BLF2043,112 by NXP Semiconductors is a single N-channel MOSFET designed for high-performance applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for power management in RF amplifiers and industrial systems.
BLF2043,135
BLF2043,135 by NXP Semiconductors is an N-channel MOSFET designed for high-performance applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for power amplification in RF circuits. This single configuration FET ensures efficient energy management in various electronic devices.
BLF3G22-30,135
BLF3G22-30,135 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 12 A and operates up to 150 °C, making it suitable for demanding environments. This transistor excels in RF amplification and switching applications.
12 A
BLF404,115
NXP Semiconductors BLF404,115 is a single N-CHANNEL FET with 1.5A max drain current and 8.3W power dissipation. Ideal for applications requiring high-power amplification in enhancement mode operation up to 200°C, utilizing metal-oxide semiconductor technology for efficient performance.
1.5 A
8.3 W
BUK1M200-50SDLD,51
BUK1M200-50SDLD,51 from NXP Semiconductors is an N-channel power FET ideal for efficient switching applications. It supports a max drain current of 1.7 A and power dissipation of 9.4 W, operating up to 150 °C. This MOSFET is perfect for compact electronic designs requiring reliable performance.
1.7 A
9.4 W
BUK7619-100B,118
BUK7619-100B,118 from NXP is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 64 A and power dissipation of 200 W, operating up to 175 °C. Perfect for efficient switching in power management systems.
64 A
245
200 W
BUK763R4-30B,118
BUK763R4-30B,118 by NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating up to 175 °C. Ideal for enhancing performance in various electronic circuits.
255 W
PHD18NQ10T,118
PHD18NQ10T,118 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and power dissipation of 79 W, making it ideal for high-efficiency power applications. With an operating temp up to 175 °C, it's perfect for demanding environments.
79 W
BUK7Y9R9-80E/CX
BUK7Y9R9-80E/CX from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 89 A, power dissipation up to 195 W, and operates at temperatures up to 175 °C, ideal for high-performance applications.
89 A
195 W
BUK968R3-40E,118
NXP Semiconductors' BUK968R3-40E,118 is a N-channel Power FET with 40V DS breakdown voltage and 319A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0079 ohm max on-resistance, and 96W power dissipation in a small outline package.
AVALANCHE RATED
43.9 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
.0079 ohm
R-PSSO-G2
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
319 A
AEC-Q101; IEC-60134
GULL WING
SWITCHING
SILICON
BUK9E4R4-80E,127
NXP Semiconductors BUK9E4R4-80E,127 is a N-channel Power FET with 80V DS breakdown voltage and 715A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0044 ohm max on-resistance, and operates in enhancement mode.
488 mJ
80 V
.0044 ohm
TO-262AA
R-PSIP-T3
3
IN-LINE
715 A
Tin (Sn)
THROUGH-HOLE
BUK9E4R9-60E,127
BUK9E4R9-60E,127 from NXP is an N-channel power FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-power circuits with built-in diode functionality.
273 mJ
60 V
.0049 ohm
590 A
BUK961R5-30E,118
NXP Semiconductors BUK961R5-30E,118 is a N-channel FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1096mJ avalanche energy rating, and 0.0015 ohm max on resistance.
1096 mJ
30 V
.0015 ohm
324 W
1393 A
PMPB12UN,115
NXP Semiconductors PMPB12UN,115 is a N-CHANNEL FET with 20V DS breakdown voltage and 31A IDM. Ideal for switching applications, it has a max drain current of 7.9A, 0.018 ohm RDS(on), and operates in enhancement mode at up to 150°C.
20 V
7.9 A
.018 ohm
S-PDSO-N6
6
SQUARE
1.7 W
31 A
IEC-60134
NO LEAD
DUAL
BUK953R2-40E,127
BUK953R2-40E,127 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with its built-in diode and low on-resistance.
419 mJ
.0032 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
781 A
BUK954R4-80E,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Drain Current (ID): 120 A; Additional Features: AVALANCHE RATED;
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