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NXP Semiconductors Power Field Effect Transistors (FET) 358

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PHW80NQ10T,127 by NXP Semiconductors

PHW80NQ10T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 263 W; Maximum Drain-Source On Resistance: .015 ohm; Terminal Finish: MATTE TIN;

481 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

80 A

80 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

263 W

320 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX14NQ20T,127 by NXP Semiconductors

PHX14NQ20T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;

70 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

7.6 A

7.6 A

.23 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

30 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX18NQ11T,127 by NXP Semiconductors

PHX18NQ11T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31.2 W; Minimum DS Breakdown Voltage: 110 V; Terminal Form: THROUGH-HOLE;

56 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

110 V

12.5 A

12.5 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31.2 W

50.2 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX18NQ20T,127 by NXP Semiconductors

PHX18NQ20T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

8.2 A

8.2 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

30 W

33 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX20N06T,127 by NXP Semiconductors

PHX20N06T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Pulsed Drain Current (IDM): 51.6 A; Maximum Drain-Source On Resistance: .075 ohm;

30.3 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

55 V

12.9 A

12.9 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

23 W

51.6 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX23NQ10T,127 by NXP Semiconductors

PHX23NQ10T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 27 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 100 V;

FAST SWITCHING

93 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

100 V

13 A

13 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

27 W

52 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX23NQ11T,127 by NXP Semiconductors

PHX23NQ11T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41.6 W; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 64.3 A;

93 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

110 V

16 A

16 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

41.6 W

64.3 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX34NQ11T,127 by NXP Semiconductors

PHX34NQ11T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56.8 W; Maximum Pulsed Drain Current (IDM): 99.4 A; Case Connection: ISOLATED;

115 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

110 V

24.8 A

24.8 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

56.8 W

99.4 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX45NQ11T,127 by NXP Semiconductors

PHX45NQ11T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62.5 W; Maximum Drain Current (Abs) (ID): 30.4 A; Transistor Element Material: SILICON;

250 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

110 V

30.4 A

30.4 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

62.5 W

121 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX8NQ11T,127 by NXP Semiconductors

PHX8NQ11T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 27.7 W; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;

35 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

110 V

7.5 A

7.5 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

27.7 W

30.2 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PHX9NQ20T,127 by NXP Semiconductors

PHX9NQ20T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 5.2 A;

93 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

5.2 A

5.2 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

21 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PSMN004-36B,118 by NXP Semiconductors

PSMN004-36B,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2;

LOGIC LEVEL COMPATIBLE

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

36 V

75 A

.0054 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

240 A

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

PSMN004-55W,127 by NXP Semiconductors

PSMN004-55W,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 100 A; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

357 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

100 A

100 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

300 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PSMN004-60P,127 by NXP Semiconductors

PSMN004-60P,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;

LOGIC LEVEL COMPATIBLE

500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

230 W

400 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

PSMN005-25D,118 by NXP Semiconductors

PSMN005-25D,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2; Additional Features: LOGIC LEVEL COMPATIBLE;

LOGIC LEVEL COMPATIBLE

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

75 A

.0075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

240 A

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

PSMN005-55B,118 by NXP Semiconductors

PSMN005-55B,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

LOGIC LEVEL COMPATIBLE

268 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

75 A

.0067 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

240 A

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

PSMN005-55P,127 by NXP Semiconductors

PSMN005-55P,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;

LOGIC LEVEL COMPATIBLE

268 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

75 A

75 A

.0067 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

230 W

240 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PSMN009-100W,127 by NXP Semiconductors

PSMN009-100W,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

650 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

100 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

300 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PSMN020-150W,127 by NXP Semiconductors

PSMN020-150W,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .02 ohm; JESD-30 Code: R-PSFM-T3;

707 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

73 A

73 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

290 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

PSMN040-200W,127 by NXP Semiconductors

PSMN040-200W,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Avalanche Energy Rating (EAS): 661 mJ; JESD-609 Code: e3;

661 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

50 A

50 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

200 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SI4800,518 by NXP Semiconductors

SI4800,518

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: NICKEL PALLADIUM GOLD; JEDEC-95 Code: MS-012AA;

SINGLE WITH BUILT-IN DIODE

30 V

9 A

.0185 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e4

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

40 A

Not Qualified

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

SI9936DY,518 by NXP Semiconductors

SI9936DY,518

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 40 A; No. of Terminals: 8; Package Style (Meter): SMALL OUTLINE;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

5 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e4

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

40 A

Not Qualified

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON