Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BUK951R9-40E,127
NXP Semiconductors
BUK951R9-40E,127 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with robust performance.
AVALANCHE RATED
1008 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
120 A
.00184 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
349 W
1257 A
AEC-Q101; IEC-60134
FET General Purpose Power
NO
Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
BUK9E3R2-40E,127
BUK9E3R2-40E,127 from NXP Semiconductors is an N-channel power FET designed for switching applications. It features a max drain current of 100 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in automotive systems.
419 mJ
100 A
.0032 ohm
TO-262AA
R-PSIP-T3
IN-LINE
234 W
781 A
BUK761R4-30E,118
NXP Semiconductors BUK761R4-30E,118 is a N-channel FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1425A pulsed drain current, and 324W power dissipation in a small outline package.
1096 mJ
30 V
.00145 ohm
R-PSSO-G2
2
SMALL OUTLINE
245
324 W
1425 A
YES
TIN
GULL WING
30
BUK951R6-30E,127
BUK951R6-30E,127 from NXP is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in automotive systems.
1405 mJ
.0016 ohm
1400 A
BUK9E6R1-100E,127
BUK9E6R1-100E,127 from NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
387 mJ
100 V
.0061 ohm
576 A
BUK9E1R9-40E,127
BUK9E1R9-40E,127 from NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with built-in diode functionality.
.00193 ohm
1228 A
BUK7E4R0-80E,127
NXP Semiconductors' BUK7E4R0-80E,127 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 758A IDM and 349W Pd max. The transistor operates in ENHANCEMENT MODE with 0.004 ohm RDS(on) and can handle up to 175°C temperature.
488 mJ
80 V
.004 ohm
758 A
PSMN8R5-108ESQ
PSMN8R5-108ESQ by NXP is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 100 A, a breakdown voltage of 108 V, and a low on-resistance of 0.0085 Ω. Ideal for high-power circuits, it operates at up to 175 °C.
219 mJ
108 V
.0085 ohm
263 W
429 A
IEC-60134
BUK761R5-40EJ
BUK761R5-40EJ by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with minimal resistance.
.00151 ohm
BUK7E1R6-30E,127
NXP Semiconductors BUK7E1R6-30E,127 is a N-channel Power FET with 30V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 1408A pulsed drain current, and 349W power dissipation in a plastic/epoxy package.
1408 A
BUK962R1-40E,118
NXP Semiconductors' BUK962R1-40E,118 is an N-channel Power FET with 40V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 622mJ avalanche energy rating, and 0.0021 ohm max on-resistance. Suitable for enhancement mode operation in high-power systems with a max power dissipation of 293W at 175°C operating temperature.
622 mJ
.0021 ohm
293 W
1078 A
BUK9E2R3-40E,127
BUK9E2R3-40E,127 from NXP Semiconductors is an N-channel power FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in automotive systems.
.0025 ohm
988 A
BUK961R7-40E,118
BUK961R7-40E,118 by NXP is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits with its built-in diode and low on-resistance.
801 mJ
.0017 ohm
1260 A
PMPB20UN,115
PMPB20UN,115 by NXP Semiconductors is an N-channel FET designed for efficient switching applications. It features a max drain current of 6.6 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
20 V
6.6 A
.025 ohm
S-PDSO-N6
6
150 Cel
SQUARE
260
12.5 W
27 A
NO LEAD
DUAL
BUK204-50Y,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
.1 ohm
R-PSSO-G4
4
Not Qualified
BUK205-50Y118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Terminal Position: SINGLE; No. of Terminals: 4;
.06 ohm
BUK7524-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Additional Features: ESD PROTECTION; Minimum DS Breakdown Voltage: 55 V;
ESD PROTECTION
80 mJ
55 V
45 A
.024 ohm
180 A
BUK221-50DY,118
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
60 mJ
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
45 V
4 A
.09 ohm
R-PSSO-G6
BUK7109-75ATE,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 245;
739 mJ
75 V
75 A
.009 ohm
272 W
480 A
BUK764R3-40B,118
NXP Semiconductors BUK764R3-40B,118 is a N-channel FET with 40V DS breakdown voltage and 706A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0043 ohm max on-resistance, and 961mJ avalanche energy rating.
961 mJ
176 A
.0043 ohm
254 W
706 A
BUK9609-55A,118
NXP Semiconductors BUK9609-55A,118 is a N-channel FET with 55V DS breakdown voltage and 433A pulsed drain current. Ideal for switching applications, it features a built-in diode, 108A max ID, and 0.01 ohm RDS(on). The transistor operates in enhancement mode with a max power dissipation of 211W at 175°C.
400 mJ
108 A
.01 ohm
211 W
433 A
BUK98150-55A,135
NXP Semiconductors' BUK98150-55A,135 is a N-channel Power FET with 55V DS breakdown voltage and 22A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.161 ohm max on-resistance, and operates in enhancement mode.
22 mJ
5 A
5.5 A
.161 ohm
R-PDSO-G4
6 W
22 A
BUK98180-100A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
16 mJ
4.6 A
.201 ohm
8 W
18 A
BUK9875-100A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Peak Reflow Temperature (C): 260; Maximum Pulsed Drain Current (IDM): 28 A;
49 mJ
7 A
.084 ohm
-55 Cel
28 A
IRFR220,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .8 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
200 V
4.8 A
.8 ohm
TO-252
19 A
PH16030L,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Finish: TIN; Transistor Application: SWITCHING;
LOGIC LEVEL
38 A
16.9 ohm
MO-235
PH3830L,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;
250 mJ
98 A
.0049 ohm
62.5 W
290 A
MATTE TIN
PH5330E,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
130 mJ
80 A
250 A
PH6030L,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Transistor Element Material: SILICON; No. of Terminals: 4;
95 mJ
76.7 A
.0097 ohm
300 A
PHB101NQ04T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 157 W; Case Connection: DRAIN; No. of Elements: 1;
200 mJ
.008 ohm
157 W
240 A
PHB108NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Maximum Drain Current (ID): 75 A; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE
180 mJ
25 V
.0075 ohm
PHB110NQ06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
280 mJ
.0093 ohm
200 W
PHB119NQ06T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G2; Terminal Finish: TIN;
.0071 ohm
PHB143NQ04T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 240 A; Maximum Drain-Source On Resistance: .0052 ohm;
475 mJ
.0052 ohm
PHB153NQ08LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: LOGIC LEVEL COMPATIBLE; Transistor Element Material: SILICON;
560 mJ
.0066 ohm
PHB160NQ08T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 75 A;
.0056 ohm
300 W
PHB38N02LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2; Terminal Form: GULL WING;
44.7 A
.016 ohm
179 A
PHD16N03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 32 A; Terminal Position: SINGLE; Case Connection: DRAIN;
16 A
.067 ohm
32 A
PHD22NQ20T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 200 V; No. of Elements: 1;
150 mJ
21.1 A
.12 ohm
42.2 A
PHD34NQ10T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Drain Current (ID): 35 A; Maximum Drain Current (Abs) (ID): 35 A;
170 mJ
35 A
.04 ohm
136 W
140 A
FET General Purpose Powers
PHD36N03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57.6 W; Maximum Drain Current (ID): 43.4 A; No. of Terminals: 2;
43.4 A
57.6 W
173.6 A
PHD82NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JEDEC-95 Code: TO-252AA; Minimum DS Breakdown Voltage: 30 V;
TO-252AA
PHK12NQ10T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; Maximum Pulsed Drain Current (IDM): 48 A; Operating Mode: ENHANCEMENT MODE;
65 mJ
11.6 A
.028 ohm
MS-012AA
R-PDSO-G8
e4
8
8.9 W
48 A
Nickel/Palladium/Gold (Ni/Pd/Au)
PHM12NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Terminal Position: DUAL; Transistor Element Material: SILICON;
20.4 A
.085 ohm
R-PDSO-N2
60 A
PHM15NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .085 ohm; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
210 mJ
17.5 A
R-PDSO-N8
PHM18NQ15T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 170 mJ;
150 V
.075 ohm
76 A
PHM21NQ15T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: .055 ohm; Qualification: Not Qualified;
22.2 A
.055 ohm
PHM25NQ10T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-N8; Minimum DS Breakdown Voltage: 100 V;
30.7 A
.03 ohm
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