Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BUK9880-55,135
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Additional Features: ESD PROTECTED, LOGIC LEVEL COMPATIBLE; Maximum Drain Current (ID): 3.5 A;
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
30 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
55 V
7.5 A
3.5 A
.08 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G4
e3
1
4
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
8.3 W
40 A
Not Qualified
FET General Purpose Power
YES
TIN
GULL WING
DUAL
30
SWITCHING
SILICON
BUK9880-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
36 mJ
7 A
.089 ohm
8 W
30 A
BUK9E3R2-40B,127
BUK9E3R2-40B,127 by NXP Semiconductors is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A Max ID. Ideal for SWITCHING applications, it features a built-in DIODE, 888A IDM, and 0.0035 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 300W and can withstand up to 175°C.
1200 mJ
40 V
100 A
.0035 ohm
TO-262AA
R-PSIP-T3
3
175 Cel
IN-LINE
300 W
888 A
NO
THROUGH-HOLE
SINGLE
BUK9E4R4-40B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 254 W; Maximum Drain-Source On Resistance: .0044 ohm; Operating Mode: ENHANCEMENT MODE;
961 mJ
75 A
.0044 ohm
254 W
697 A
IRF530N,127
NXP Semiconductors' IRF530N,127 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 68A IDM and 150mJ EAS. With 0.11 ohm RDS(on) and 175°C max temp, this transistor offers high performance in various power circuits.
150 mJ
100 V
15 A
17 A
.11 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
63 W
68 A
MATTE TIN
IRF540,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Pulsed Drain Current (IDM): 92 A; No. of Elements: 1;
230 mJ
28 A
23 A
.077 ohm
150 W
92 A
IRF640,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 3; Transistor Element Material: SILICON;
580 mJ
200 V
18 A
16 A
.18 ohm
125 W
64 A
IRFZ24N,127
NXP Semiconductors' IRFZ24N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 68A IDM. Ideal for SWITCHING applications due to its 0.07 ohm Drain-Source On Resistance and 30mJ EAS rating. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
ESD PROTECTED
.07 ohm
45 W
IRFZ44N,127
NXP Semiconductors' IRFZ44N,127 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 160A IDM and 0.022 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W and can handle up to 175°C temperature.
110 mJ
49 A
.022 ohm
110 W
160 A
PHB11N06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
LOGIC LEVEL COMPATIBLE
25 mJ
10.3 A
.15 ohm
R-PSSO-G2
2
41 A
PHB78NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
185 mJ
25 V
.0135 ohm
PHD23NQ10T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON; Qualification: Not Qualified;
93 mJ
NOT SPECIFIED
PHD3055E,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSSO-G2;
60 V
TO-252AA
33 W
PHD37N06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain Current (ID): 37 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
45 mJ
37 A
.035 ohm
148 A
PHD45N03LTA,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Avalanche Energy Rating (EAS): 40 mJ; Transistor Application: SWITCHING;
40 mJ
.024 ohm
TO-252
PHD55N03LTA,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 55 A; No. of Terminals: 2;
60 mJ
55 A
.018 ohm
220 A
PHD96NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-252AA; Package Shape: RECTANGULAR;
.0075 ohm
240 A
PHD98N03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Form: GULL WING; Maximum Pulsed Drain Current (IDM): 240 A;
183 mJ
.0073 ohm
PHK4NQ10T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 4 A; Maximum Pulsed Drain Current (IDM): 16 A;
4 A
R-PDSO-G8
8
PHP101NQ04T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 157 W; Maximum Drain Current (ID): 75 A; Package Body Material: PLASTIC/EPOXY;
200 mJ
.008 ohm
157 W
PHP110NQ06LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 75 A; JEDEC-95 Code: TO-220AB;
280 mJ
.0093 ohm
200 W
PHP110NQ08LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
560 mJ
75 V
.00995 ohm
230 W
PHP110NQ08T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Case Connection: DRAIN; JEDEC-95 Code: TO-220AB;
.009 ohm
440 A
PHP112N06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; No. of Terminals: 3; Qualification: Not Qualified;
360 mJ
400 A
PHP119NQ06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0071 ohm
PHP129NQ04LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
475 mJ
PHP143NQ04T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
.0052 ohm
PHP14NQ20T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 56 A;
70 mJ
14 A
.23 ohm
56 A
PHP152NQ03LTA,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.005 ohm
PHP160NQ08T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .0056 ohm; Case Connection: DRAIN;
.0056 ohm
PHP174NQ04LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; JEDEC-95 Code: TO-220AB;
.0048 ohm
250 W
PHP193NQ06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 240 A;
.004 ohm
PHP222NQ04LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-609 Code: e3; Terminal Position: SINGLE;
PHP225NQ04T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
.0031 ohm
PHP32N06LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 97 W; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
100 mJ
34 A
.043 ohm
97 W
136 A
PHP45N03LTA,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; No. of Terminals: 3; Transistor Application: SWITCHING;
65 W
PHP45NQ15T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;
180 mJ
150 V
45.1 A
.042 ohm
90.2 A
PHP47NQ10T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;
47 A
.028 ohm
166 W
187 A
PHP55N03LTA,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain-Source On Resistance: .018 ohm; Transistor Element Material: SILICON;
85 W
PHP71NQ03LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; No. of Terminals: 3; Terminal Finish: MATTE TIN;
30 V
.0152 ohm
120 W
PHP73N06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Pulsed Drain Current (IDM): 266 A; JESD-30 Code: R-PSFM-T3;
125 mJ
73 A
.014 ohm
266 A
PHP78NQ03LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 93 W; Maximum Operating Temperature: 175 Cel; No. of Terminals: 3;
93 W
228 A
PHP83N03LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
120 mJ
.012 ohm
115 W
PHU101NQ03LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSIP-T3;
TO-251AA
PHU108NQ03LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Case Connection: DRAIN; Transistor Application: SWITCHING;
TO-251
187 W
PHU11NQ10T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 57.7 W; Maximum Drain Current (ID): 10.9 A; Maximum Drain Current (Abs) (ID): 10.9 A;
35 mJ
10.9 A
57.7 W
43.6 A
PHU66NQ03LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 93 W; JESD-30 Code: R-PSIP-T3; JEDEC-95 Code: TO-251;
90 mJ
66 A
.0136 ohm
PHU78NQ03LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 93 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 240 A;
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
61 A
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