Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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PSMN3R8-30LL,115
NXP Semiconductors
PSMN3R8-30LL,115 by NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 40 A and power dissipation of 69 W, making it ideal for high-efficiency applications in automotive and industrial sectors. With an operating temp up to 150 °C, it ensures reliable performance in demanding environments.
SINGLE
40 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
69 W
FET General Purpose Power
YES
PSMN7R0-40LS,115
PSMN7R0-40LS,115 by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 40 A and power dissipation of 65 W, operating up to 150 °C. Ideal for applications in automotive and industrial sectors.
65 W
PSMN9R0-30LL,115
PSMN9R0-30LL,115 by NXP Semiconductors is an N-channel power FET designed for efficient performance. It supports a max drain current of 21 A and power dissipation of 50 W, operating up to 150 °C. Ideal for applications in power management and switching circuits.
21 A
50 W
PSMN3R5-30LL,115
PSMN3R5-30LL,115 by NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 40 A and power dissipation of 71 W, making it ideal for high-efficiency applications in automotive and industrial sectors. With an operating temp up to 150 °C, it ensures reliability in demanding environments.
71 W
PSMN5R8-30LL,115
PSMN5R8-30LL,115 by NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It supports a max drain current of 40 A and power dissipation of 55 W, operating up to 150 °C. Ideal for high-performance power management in various electronic devices.
55 W
BF1100R,235
BF1100R,235 from NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 30mA and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount design ensures easy integration into various circuits.
.03 A
e3
Matte Tin (Sn)
BF1108R,235
BF1108R,235 by NXP Semiconductors is an N-channel depletion mode FET designed for efficient power management. It supports a max drain current of 0.01 A and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount configuration ensures easy integration into compact designs.
.01 A
DEPLETION MODE
260
TIN
30
BF904,235
BF904,235 by NXP Semiconductors is an N-channel power FET designed for efficient performance. It supports a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature applications in electronics. Its surface mount configuration ensures easy integration into compact designs.
BF904R,235
BF904R,235 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It features a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount configuration ensures easy integration into compact designs.
Tin (Sn)
BF904WR,135
BF904WR,135 by NXP Semiconductors is an N-channel power FET designed for efficient performance in compact applications. It supports a max drain current of 30 mA and operates at temperatures up to 150 °C. Ideal for surface mount designs, it offers reliable power dissipation of 280 mW.
.28 W
BF909,235
BF909,235 by NXP Semiconductors is an N-channel power FET designed for efficient performance in compact applications. It supports a max drain current of 0.04 A and operates up to 150 °C, making it ideal for high-temperature environments. Its surface mount configuration ensures easy integration into various electronic devices.
.04 A
BF998R,235
NXP Semiconductors BF998R,235 is a N-CHANNEL FET with 0.03A ID and 0.2W power dissipation. Ideal for dual gate applications in METAL-OXIDE SEMICONDUCTOR technology, operating up to 150°C. Suitable for surface mount configurations requiring high drain current capabilities.
DUAL GATE, DEPLETION MODE
.2 W
BLF1046,135
BLF1046,135 by NXP Semiconductors is an N-channel MOSFET designed for high-performance applications. It supports a max drain current of 4.5 A and operates at temperatures up to 200 °C. Ideal for power management in various electronic devices, it ensures efficient energy control.
4.5 A
200 Cel
BLF6G27-10,118
BLF6G27-10,118 by NXP Semiconductors is an N-channel enhancement mode FET designed for high-performance applications. It supports a max drain current of 3.5 A and operates at temperatures up to 225 °C. Ideal for power management in compact electronic devices, it features surface mount configuration.
3.5 A
225 Cel
BLF6G27-45,135
BLF6G27-45,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for high-performance applications. It supports a max drain current of 20 A and operates up to 150 °C, making it ideal for power management in RF amplifiers. Its surface mount configuration ensures efficient space utilization in compact designs.
20 A
BLF6G27LS-135,118
BLF6G27LS-135,118 by NXP Semiconductors is a powerful N-channel FET designed for enhancement mode operation. It supports a max drain current of 34 A and operates at temperatures up to 200 °C, making it ideal for high-performance RF applications. This single configuration transistor excels in efficient power management.
34 A
BLF6G27S-45,135
The NXP Semiconductors BLF6G27S-45,135 is a single N-channel power FET with 20A max drain current. Operating in enhancement mode, it features metal-oxide semiconductor technology and can withstand up to 150°C. Ideal for high-power applications requiring efficient switching capabilities.
BSS83,235
The NXP Semiconductors BSS83,235 is a single N-channel power FET with a max drain current of 0.05A and power dissipation of 0.23W. Operating in enhancement mode, it has a max temperature of 125°C making it suitable for various applications requiring low-power switching capabilities in surface mount configurations.
.05 A
125 Cel
.23 W
BF1101,215
BF1101,215 by NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature environments. Its surface mount configuration ensures easy integration into compact designs.
BF1101R,215
BF1101R,215 from NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It supports a max drain current of 30mA and operates up to 150 °C, making it ideal for compact electronic devices. Its surface mount configuration ensures easy integration into modern circuits.
MATTE TIN
40
BF1101WR,135
BF1101WR,135 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature applications in compact electronics. Its surface mount configuration ensures easy integration into various circuits.
BF1102,115
BF1102,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.04A and operating temp of 150°C. It features enhancement mode operation and uses metal-oxide semiconductor technology. Ideal for power applications requiring surface mount components.
BF1102R,135
BF1102R,135 by NXP Semiconductors is an N-channel MOSFET designed for surface mount applications. It features a max drain current of 0.04 A and operates in enhancement mode, withstanding temperatures up to 150 °C. Ideal for power management in electronic circuits.
BF1105,215
BF1105,215 by NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature environments. This surface-mount transistor is perfect for compact electronic designs.
BF1105WR,135
BF1105WR,135 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature applications in compact electronic devices. Its surface mount configuration ensures easy integration into various circuits.
BF1107,215
BF1107,215 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 0.01 A and operates up to 150 °C, making it ideal for high-temperature applications. Its single configuration ensures reliable performance in various electronic circuits.
BF1107,235
BF1107,235 by NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It supports a max drain current of 0.01 A and operates up to 150 °C, making it ideal for high-temperature environments. Its MOS technology ensures reliable performance in various electronic circuits.
BF1201,215
BF1201,215 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It supports a max drain current of 30 mA and power dissipation of 200 mW, operating up to 150 °C. Ideal for surface mount applications in compact electronic devices.
BF1201R,215
BF1201R,215 by NXP Semiconductors is an N-channel MOSFET ideal for power applications. It features a max drain current of 30 mA, power dissipation of 200 mW, and operates up to 150 °C. This surface-mount FET is perfect for compact electronic designs.
BF1201WR,135
NXP Semiconductors BF1201WR,135 is a N-CHANNEL FET with 0.03A max drain current and 0.2W power dissipation. Ideal for applications requiring high temperature resistance up to 150°C, such as power management in compact electronic devices.
BF1202,215
BF1202,215 by NXP Semiconductors is an N-channel FET designed for efficient power management. It supports a max drain current of 30 mA and power dissipation of 200 mW, operating up to 150 °C. Ideal for compact surface mount applications in electronics.
FET General Purpose Powers
BF1202R,215
NXP Semiconductors BF1202R,215 is a N-CHANNEL FET with 0.03A max drain current and 0.2W power dissipation. Ideal for applications requiring high temperature resistance up to 150°C, such as power management in electronic devices.
BF1204,135
BF1204,135 by NXP Semiconductors is a N-CHANNEL Power FET with dual gate, enhancement mode. It has max drain current of 0.03A and power dissipation of 0.2W. Ideal for applications requiring high temperature tolerance up to 150°C in surface mount configurations.
DUAL GATE, ENHANCEMENT MODE
BF1205,135
BF1205,135 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max drain current of 30 mA, power dissipation of 200 mW, and operates at up to 150 °C. Ideal for dual-gate applications in compact electronic devices.
BF908R,215
BF908R,215 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.2 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.
BF908R,235
BF908R,235 by NXP Semiconductors is an N-channel FET designed for efficient power management. It features a max power dissipation of 0.2 W and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount design ensures easy integration into compact circuits.
BF909R,215
BF909R,215 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It features a max drain current of 0.04 A and operates up to 150 °C, making it ideal for high-temperature applications in compact electronics. Its surface mount configuration ensures easy integration into various circuits.
BF909R,235
BF909R,235 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It features a max drain current of 0.04 A and operates up to 150 °C, making it ideal for high-temperature applications in compact electronic devices. Its surface mount configuration ensures easy integration into modern circuits.
BF909WR,135
BF909WR,135 by NXP Semiconductors is an N-channel MOSFET designed for surface mount applications. It supports a max drain current of 0.04 A and operates up to 150 °C, making it ideal for power management in compact electronic devices. Its tin terminal finish ensures reliable connections.
BLF521,112
BLF521,112 by NXP Semiconductors is a single N-channel power FET with 1A max drain current and 10W max power dissipation. It operates in enhancement mode with a max temperature of 200°C. Ideal for high-power applications requiring efficient switching capabilities.
1 A
10 W
BLF6G20-75,112
BLF6G20-75,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for high-performance applications. It supports a max drain current of 18 A and operates up to 225 °C, making it ideal for power amplification in RF circuits. Its surface mount configuration ensures efficient space utilization in compact designs.
18 A
BLF6G22S-45,112
BLF6G22S-45,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It features a max power dissipation of 2.5 W and operates up to 150 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration ensures easy integration into compact designs.
2.5 W
BLS2933-100,112
BLS2933-100,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 12 A and operates at temperatures up to 200 °C. Ideal for applications in power conversion and switching circuits.
12 A
BUK7510-55AL,127
NXP Semiconductors' BUK7510-55AL,127 is an N-channel Power FET with 122A max drain current and 300W power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation up to 175°C, featuring metal-oxide semiconductor technology and single configuration.
122 A
175 Cel
300 W
NO
BUK753R4-30B,127
BUK753R4-30B,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating efficiently up to 175 °C. Ideal for switching and amplification in various electronic circuits.
75 A
255 W
BUK761R8-30C,118
NXP Semiconductors' BUK761R8-30C,118 is a N-CHANNEL Power FET with 100A max drain current and 333W max power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as industrial motor control systems or power supplies.
100 A
245
333 W
BUK7880-55A,115
BUK7880-55A,115 by NXP is an N-channel power FET designed for efficient performance in enhancement mode. It supports a max drain current of 7 A and power dissipation of 8 W, operating up to 150 °C. Ideal for applications requiring reliable switching and amplification.
7 A
8 W
BUK7E07-55B,127
NXP Semiconductors' BUK7E07-55B,127 is an N-channel Power FET with 119A max drain current and 203W max power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temperature of 175°C.
119 A
203 W
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