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BF904R,235

NXP Semiconductors

BF904R,235 by NXP Semiconductors

BF904R,235 by NXP Semiconductors is an N-channel MOSFET designed for efficient power management. It features a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature applications. Its surface mount configuration ensures easy integration into compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,546 parts In-Stock

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Anansix

USA . 1,983 parts In-Stock

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Digiode

USA . 634 parts In-Stock

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Native Components

USA . 293 parts In-Stock

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$0.354

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$0.340

293

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Northwest PG Solutions

USA . 2,107 parts In-Stock

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$0.389

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$0.343

2,107

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$0.343

AZTECH Wire

Italy . 1,009 parts In-Stock

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$9.740

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$9.740

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One Stop Electronics

USA . 419 parts In-Stock

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$51.050

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UNI Independent Distributors

Spain . 5,209 parts In-Stock

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Corphita

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Microchip USA

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Overview

Unlock the power of innovation with the BF904R,235 from NXP Semiconductors, a leader in advanced semiconductor solutions. This N-channel Power FET combines exceptional quality and reliability with versatile applications in RF amplification, signal processing, and more. Designed for performance under demanding conditions, it enhances efficiency and longevity, ensuring your projects thrive. Elevate your designs with NXP’s trusted technology!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs are typically faster and more efficient than P-channel FETs, making this product ideal for high-speed applications.

Configuration: SINGLE

A single configuration simplifies circuit design and saves space, which is advantageous for compact electronic devices.

Surface Mount: YES

Surface mount technology allows for reduced PCB size and improved performance, making it suitable for modern, miniaturized electronics.

Maximum Drain Current (Abs) (ID): 0.03 A

With a maximum drain current of 30 mA, this FET is suitable for low-power applications, ensuring efficient performance without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance, resulting in lower energy consumption and less loading on the previous stage of a circuit.

Maximum Operating Temperature: 150 °C

A high operating temperature limit enhances reliability in challenging conditions, making this FET suitable for high-temperature environments.

Terminal Finish: Tin (Sn)

Tin finish offers excellent solderability and corrosion resistance, ensuring that the product maintains good electrical connections over time.

Maximum Drain Current (ID): 0.03 A

Reiterating its capability, this FET's low maximum drain current ensures it operates efficiently in low-power applications, preventing potential damage.

Technical Specifications

Power Field Effect Transistors (FET) BF904R,235 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Trade Compliance

BF904R,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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