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BF904,235

NXP Semiconductors

BF904,235 by NXP Semiconductors

BF904,235 by NXP Semiconductors is an N-channel power FET designed for efficient performance. It supports a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature applications in electronics. Its surface mount configuration ensures easy integration into compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 129,000 parts In-Stock

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Vyrian

USA . 3,526 parts In-Stock

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Anansix

USA . 1,848 parts In-Stock

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Digiode

USA . 485 parts In-Stock

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Northwest PG Solutions

USA . 1,853 parts In-Stock

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$2.904

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AZTECH Wire

Italy . 1,140 parts In-Stock

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$16.040

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One Stop Electronics

USA . 1,442 parts In-Stock

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$55.050

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QUARKTWIN TECHNOLOGY LTD

USA . 17,680 parts In-Stock

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Microchip USA

USA . 5,716 parts In-Stock

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UNI Independent Distributors

Spain . 2,478 parts In-Stock

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Corphita

USA . 1,386 parts In-Stock

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Native Components

USA . 436 parts In-Stock

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Overview

Unlock powerful performance with the BF904,235 from NXP Semiconductors, a leading innovator in semiconductor technology. This high-quality N-channel FET is designed for efficiency and reliability, making it ideal for demanding applications in automotive, industrial, and consumer electronics. Experience enhanced operational stability and exceptional thermal management, ensuring your projects thrive. Choose BF904,235 for unmatched quality and performance that drives your success forward!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are generally preferred for their higher electron mobility, allowing for faster switching speeds and improved efficiency, making this product suitable for a variety of applications.

Configuration: SINGLE

A single configuration simplifies circuit design and minimizes component count, enhancing reliability and ease of assembly in electronic projects.

Surface Mount: YES

Surface mount technology allows for compact designs with reduced PCB space, improving integration into modern, miniaturized electronic devices.

Maximum Drain Current (Abs) (ID): 0.03 A

With a maximum drain current of 30 mA, this FET can handle low-power applications effectively, making it ideal for signal processing and low-power switching.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high input impedance and low output capacitance, leading to lower power consumption and efficient operation in both digital and analog circuits.

Maximum Operating Temperature: 150 °C

An operating temperature of 150 °C enables this FET to perform reliably in a variety of environments, making it suitable for high-temperature applications.

Terminal Finish: TIN

The tin terminal finish ensures good solderability and corrosion resistance, contributing to the longevity and reliability of the device in various applications.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures that the device can withstand soldering processes without compromising its performance, making it robust for production.

Peak Reflow Temperature °C: 260

Withstands peak reflow temperatures of up to 260 °C, making it compatible with modern soldering techniques, which is crucial for high-volume manufacturing.

Technical Specifications

Power Field Effect Transistors (FET) BF904,235 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BF904,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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