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BF904RT/R

Philips Semiconductors

BF904RT/R by Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;

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Vyrian

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Digiode

USA . 2,396 parts In-Stock

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Anansix

USA . 424 parts In-Stock

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Native Components

USA . 502 parts In-Stock

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$0.230

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$0.221

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Northwest PG Solutions

USA . 1,975 parts In-Stock

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$0.253

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One Stop Electronics

USA . 605 parts In-Stock

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$48.050

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605

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UNI Independent Distributors

Spain . 7,895 parts In-Stock

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Corphita

USA . 4,604 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) BF904RT/R attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Philips Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BF904RT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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