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BF1101,215

NXP Semiconductors

BF1101,215 by NXP Semiconductors

BF1101,215 by NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It features a max drain current of 0.03 A and operates up to 150 °C, making it ideal for high-temperature environments. Its surface mount configuration ensures easy integration into compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,852 parts In-Stock

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Digiode

USA . 4,245 parts In-Stock

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Anansix

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175

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AZTECH Wire

Italy . 412 parts In-Stock

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$8.980

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One Stop Electronics

USA . 1,646 parts In-Stock

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$18.050

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Component Stockers USA

USA . 515 parts In-Stock

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$99.990

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515

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UNI Independent Distributors

Spain . 7,015 parts In-Stock

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Corphita

USA . 3,158 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Native Components

USA . 670 parts In-Stock

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Microchip USA

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Northwest PG Solutions

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Overview

Elevate your designs with the BF1101,215 from NXP Semiconductors—where quality meets reliability. This N-channel power FET is engineered for superior performance, enabling efficient energy management across a variety of applications, from consumer electronics to industrial controls. Backed by NXP's industry-leading expertise, this surface-mount solution ensures seamless integration and longevity, empowering you to build innovative products that stand the test of time.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher electron mobility, resulting in better performance in switching applications, making them a great choice for efficient power management.

Configuration: SINGLE

Single configuration simplifies circuit design, saving space and reducing complexity in applications, which is ideal for compact electronic designs.

Surface Mount: YES

Surface mount technology allows for a smaller footprint on PCBs, enabling higher density designs and improved thermal performance.

Maximum Drain Current (Abs) (ID): 0.03 A

With a maximum drain current rating of 0.03 A, this FET is suitable for low-power applications, providing reliable performance in smaller devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology enables fast switching speeds and low gate power consumption, making this product an excellent choice for high-frequency applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability and durability in high-temperature environments, suitable for automotive and industrial applications.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finishing provides improved solderability and resistance to corrosion, contributing to the longevity and robustness of the component.

Technical Specifications

Power Field Effect Transistors (FET) BF1101,215 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BF1101,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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