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BLS2933-100,112

NXP Semiconductors

BLS2933-100,112 by NXP Semiconductors

BLS2933-100,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 12 A and operates at temperatures up to 200 °C. Ideal for applications in power conversion and switching circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 11,538 parts In-Stock

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11,538

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Digiode

USA . 2,973 parts In-Stock

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Anansix

USA . 316 parts In-Stock

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316

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Native Components

USA . 739 parts In-Stock

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$0.483

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$0.464

739

$0.483

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$0.464

Northwest PG Solutions

USA . 199 parts In-Stock

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$0.531

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$0.469

199

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$0.469

One Stop Electronics

USA . 1,076 parts In-Stock

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$1.050

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1,076

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AZTECH Wire

Italy . 640 parts In-Stock

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$11.130

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640

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UNI Independent Distributors

Spain . 5,370 parts In-Stock

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Corphita

USA . 1,253 parts In-Stock

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Overview

Experience superior performance and reliability with the BLS2933-100,112 from NXP Semiconductors. Designed for efficiency, this N-channel power FET excels in a range of applications—from power management to signal amplification—ensuring optimal operation even in demanding conditions. With NXP's commitment to quality, you can trust that this innovative component will enhance your designs, providing remarkable value and efficiency to elevate your projects to new heights.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs provide better performance characteristics such as higher efficiency and faster switching compared to P-channel types, making this product suitable for high-speed applications.

Configuration: SINGLE

A single configuration allows for simpler design and integration into various circuits, providing flexibility for engineers in their applications.

Surface Mount: YES

Surface mount design allows for smaller PCB footprints and easier automated assembly, which is ideal for modern electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation delivers high input impedance and better noise immunity, making this FET a reliable choice for sensitive applications.

Maximum Drain Current (Abs) (ID): 12 A

With a maximum drain current of 12 A, this FET can handle robust power requirements, allowing it to be used in high-current applications with confidence.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides low on-resistance and high-speed switching capability, optimizing the transistor for efficient power management in various applications.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature of 200 °C ensures that this FET can function reliably in demanding thermal environments, making it suitable for automotive or industrial applications.

Maximum Drain Current (ID): 12 A

The 12 A maximum drain current rating enhances the versatility of this FET, allowing it to be utilized in both general-purpose and specialized applications.

Technical Specifications

Power Field Effect Transistors (FET) BLS2933-100,112 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

BLS2933-100,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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