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BF998R,235

NXP Semiconductors

BF998R,235 by NXP Semiconductors

NXP Semiconductors BF998R,235 is a N-CHANNEL FET with 0.03A ID and 0.2W power dissipation. Ideal for dual gate applications in METAL-OXIDE SEMICONDUCTOR technology, operating up to 150°C. Suitable for surface mount configurations requiring high drain current capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 4,995 parts In-Stock

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Digiode

USA . 2,276 parts In-Stock

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VNN

France . 1,479 parts In-Stock

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Anansix

USA . 1,051 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 306 parts In-Stock

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$10.900

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Semicontronic

India . 675 parts In-Stock

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$12.050

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$11.749

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$11.688

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One Stop Electronics

USA . 543 parts In-Stock

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$37.050

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Ampacity Inc.

Singapore . 1,357 parts In-Stock

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Argo Parts USA

USA . 3,559 parts In-Stock

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Continental Prestige Electronics

USA . 2,708 parts In-Stock

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Corphita

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UNI Independent Distributors

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Bastille Electronics

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Overview

Unlock the power of innovation with the NXP Semiconductors BF998R,235 Power Field Effect Transistor. Designed for versatility and reliability, this N-CHANNEL FET offers unparalleled performance in a compact package. Ideal for a wide range of applications, from consumer electronics to automotive systems, this transistor delivers superior efficiency and precision. Trust in NXP Semiconductors' reputation for quality and experience the value of cutting-edge technology with the BF998R,235. Elevate your projects with the best in class components that drive success.

Feature Benefit Bullets

Polarity: N-CHANNEL

This allows for efficient flow of current in the desired direction, making it suitable for a variety of electronic applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it convenient for use in different projects.

Surface Mount: YES

The surface mount capability enables easy integration onto circuit boards, saving space and enhancing overall efficiency.

Operating Mode: DUAL GATE, DEPLETION MODE

This operating mode allows for precise control over the transistor's conductivity, ensuring reliable performance in various scenarios.

Maximum Drain Current (Abs): 0.03 A

With a high maximum drain current, this FET can handle heavy loads without overheating or malfunctioning.

Maximum Power Dissipation (Abs): 0.2 W

The high power dissipation capability ensures stable operation even under demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This advanced technology offers superior performance and longevity compared to traditional FET designs.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this FET suitable for use in challenging environments without sacrificing performance.

Terminal Finish: TIN

The tin terminal finish provides excellent conductivity and corrosion resistance, enhancing the overall durability of the FET.

Maximum Time At Peak Reflow Temperature (s): 30

This FET can withstand peak reflow temperatures for extended periods, ensuring secure solder connections during assembly.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this FET can be reliably soldered onto circuit boards without risk of damage.

Technical Specifications

Power Field Effect Transistors (FET) BF998R,235 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.03 A

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BF998R,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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