Loading...

STANDARD SRAM SRAM 264

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
23A640-I/ST by Microchip Technology

23A640-I/ST

Microchip Technology

Microchip Technology's 23A640-I/ST is an 8Kx8 SRAM with a max clock frequency of 16MHz. Operating at 1.8V, it features separate I/O and offers a memory density of 65536 bits. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

TS 16949

1.2 mm

.000001 Amp

1.5 V

SRAMs

10 mA

1.95 V

1.5 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K256-I/P by Microchip Technology

23K256-I/P

Microchip Technology

23K256-I/P by Microchip Technology is a 32KX8 SRAM with a max clock frequency of 20 MHz. It operates at a nominal voltage of 3V and has a memory density of 262144 bit. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

20 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

262144 bit

STANDARD SRAM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

5.334 mm

.000004 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

CY7C1041CV33-12ZSXE by Cypress Semiconductor

CY7C1041CV33-12ZSXE

Cypress Semiconductor

CY7C1041CV33-12ZSXE by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, operating at -40 to 125 °C. It features 12 ns access time, 44 terminals in small outline package for automotive applications. With common I/O type and parallel technology, it offers 4194304 bit memory density.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

SRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS61C25616AL-10KLI by Integrated Silicon Solution

IS61C25616AL-10KLI

Integrated Silicon Solution

IS61C25616AL-10KLI by Integrated Silicon Solution is a 256KX16 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

10 ns

R-PDSO-J44

e3

28.575 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

3.75 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

CY7C1020CV33-15ZSXET by Cypress Semiconductor

CY7C1020CV33-15ZSXET

Cypress Semiconductor

CY7C1020CV33-15ZSXET by Cypress Semiconductor is a 32KX16 SRAM with 3.3V supply, 15ns access time, and 44 terminals. Ideal for automotive applications due to AEC-Q100 screening level and small outline package. Operating in asynchronous mode, it offers common I/O type and 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

524288 bit

STANDARD SRAM

16

3

1

44

32768 words

32K

ASYNCHRONOUS

125 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.01 Amp

3 V

SRAMs

85 mA

3.63 V

2.97 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15ZXIT by Cypress Semiconductor

CY7C1021BN-15ZXIT

Cypress Semiconductor

CY7C1021BN-15ZXIT by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.194 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXIT by Cypress Semiconductor

CY7C1021BN-15VXIT

Cypress Semiconductor

CY7C1021BN-15VXIT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time. Operating at 5V, it features a small outline package and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1019CV33-12ZXCT by Cypress Semiconductor

CY7C1019CV33-12ZXCT

Cypress Semiconductor

CY7C1019CV33-12ZXCT by Cypress: 128KX8 SRAM with 3.3V, 12ns access time, and 1.27mm terminal pitch. Ideal for commercial applications requiring fast, asynchronous memory operations in a small outline package.

12 ns

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.63 V

2.97 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

20

10.16 mm

CY7C1021BN-15VXCT by Cypress Semiconductor

CY7C1021BN-15VXCT

Cypress Semiconductor

CY7C1021BN-15VXCT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It is used in commercial applications, featuring a small outline package and J bend terminal form for surface mount assembly.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY62256VNLL-70ZIT by Cypress Semiconductor

CY62256VNLL-70ZIT

Cypress Semiconductor

CY62256VNLL-70ZIT by Cypress is a 32Kx8 SRAM with 70ns access time, operating at 3V. It has a small outline package suitable for industrial applications. This CMOS memory IC offers parallel operation and 262144-bit memory density.

70 ns

R-PDSO-G28

11.8 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.55 mm

DUAL

8 mm

CD74HCT670M96G4 by Texas Instruments

CD74HCT670M96G4

Texas Instruments

CD74HCT670M96G4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It has a max access time of 53ns and operates in parallel mode. This memory IC is ideal for military-grade applications requiring fast and reliable data storage.

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

2/6

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

CD74HCT670MTG4 by Texas Instruments

CD74HCT670MTG4

Texas Instruments

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

2/6

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

IS61WV51216BLL-10MLI by Integrated Silicon Solution

IS61WV51216BLL-10MLI

Integrated Silicon Solution

IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.

10 ns

COMMON

R-PBGA-B48

e1

11 mm

8388608 bit

STANDARD SRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

1.2 V

SRAMs

95 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

30

9 mm

CY7C1061BV33-8ZXI by Cypress Semiconductor

CY7C1061BV33-8ZXI

Cypress Semiconductor

CY7C1061BV33-8ZXI by Cypress Semiconductor is a 3.3V, 1MX16 SRAM with 8ns access time. It operates in industrial temperature range (-40 to 85°C) and has a memory density of 16777216 bits. Ideal for applications requiring fast parallel memory access in compact designs.

8 ns

R-PDSO-G54

e3

22.415 mm

16777216 bit

STANDARD SRAM

16

3

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

Not Qualified

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

AS6C4008-55BIN by Alliance Memory

AS6C4008-55BIN

Alliance Memory

Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.

55 ns

COMMON

R-PBGA-B36

8 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA36,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3/5

Not Qualified

1.2 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

AS6C4008-55STIN by Alliance Memory

AS6C4008-55STIN

Alliance Memory

Alliance Memory's AS6C4008-55STIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package with dual terminals and common I/O type. With low standby voltage of 2V and power consumption of 60mA, it offers reliable performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

11.8 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

LSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/5

Not Qualified

1.25 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

AS6C4008-55TIN by Alliance Memory

AS6C4008-55TIN

Alliance Memory

Alliance Memory's AS6C4008-55TIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 524288 words and parallel interface, it offers reliable memory storage in compact systems.

55 ns

COMMON

R-PDSO-G32

18.4 mm

4194304 bit

STANDARD SRAM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/5

Not Qualified

1.2 mm

.00003 Amp

2 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

8 mm

AS6C1008-55TIN by Alliance Memory

AS6C1008-55TIN

Alliance Memory

Alliance Memory's AS6C1008-55TIN is a 128Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package and common I/O type. With 131072 words and 1048576-bit memory density, this CMOS technology-based chip offers reliable performance in various electronic devices.

55 ns

COMMON

R-PDSO-G32

18.4 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3/3.3

Not Qualified

1.2 mm

1.5 V

SRAMs

60 mA

5.5 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

8 mm

IS61WV25616BLS-25TLI by Integrated Silicon Solution

IS61WV25616BLS-25TLI

Integrated Silicon Solution

IS61WV25616BLS-25TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features 25ns max access time, 4194304-bit memory density, and supports asynchronous operation. Ideal for applications requiring fast and reliable data storage in harsh environments.

25 ns

COMMON

R-PDSO-G44

e3

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.5/3.3

Not Qualified

1.2 mm

.009 Amp

2 V

SRAMs

25 mA

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

IS61WV51232BLL-10BLI by Integrated Silicon Solution

IS61WV51232BLL-10BLI

Integrated Silicon Solution

IS61WV51232BLL-10BLI by Integrated Silicon Solution is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a low profile grid array package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 16Mbit, it offers high-speed data retrieval in harsh environments.

10 ns

R-PBGA-B90

e1

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.45 mm

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10

8 mm

CY7C1059DV33-12ZSXI by Cypress Semiconductor

CY7C1059DV33-12ZSXI

Cypress Semiconductor

CY7C1059DV33-12ZSXI by Cypress Semiconductor is a 1MX8 SRAM with 3.3V supply, 12ns access time, and 85°C max temp. Ideal for industrial applications requiring fast, common I/O asynchronous memory in a small outline package.

12 ns

COMMON

R-PDSO-G44

e3

18.415 mm

8388608 bit

STANDARD SRAM

8

3

1

44

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

1.194 mm

.02 Amp

2 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

40

10.16 mm

AS7C31026C-12BIN by Alliance Memory

AS7C31026C-12BIN

Alliance Memory

Alliance Memory's AS7C31026C-12BIN is a 64Kx16 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and operates in asynchronous mode. With parallel interface and 1048576-bit memory density, it offers fast performance in compact designs.

12 ns

R-PBGA-B48

e3/e6

8 mm

1048576 bit

STANDARD SRAM

16

3

1

48

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.34 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

40

6 mm

LH5116-10F by Sharp Corporation

LH5116-10F

Sharp Corporation

The Sharp LH5116-10F is a 2Kx8 SRAM with 16384-bit memory density. Operating at 5V, it offers a max access time of 100ns. Ideal for commercial applications, this CMOS technology-based IC has a rectangular package shape and operates in asynchronous mode.

100 ns

R-PDIP-T24

31 mm

16384 bit

STANDARD SRAM

8

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

Not Qualified

5.3 mm

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

74HC670D,653 by NXP Semiconductors

74HC670D,653

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 4 words;

59 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

1.75 mm

6 V

2 V

5

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

74HC670DB,112 by NXP Semiconductors

74HC670DB,112

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Power Supplies (V): 2/6;

59 ns

R-PDSO-G16

e4

6.2 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

PLASTIC/EPOXY

SSOP

SSOP16,.3

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

2/6

Not Qualified

2 mm

Other Memory ICs

6 V

2 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

5.3 mm

74HC670DB,118 by NXP Semiconductors

74HC670DB,118

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Length: 6.2 mm;

59 ns

R-PDSO-G16

e4

6.2 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

PLASTIC/EPOXY

SSOP

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

Not Qualified

2 mm

6 V

2 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

5.3 mm

74HC670N,652 by NXP Semiconductors

74HC670N,652

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

59 ns

R-PDIP-T16

e4

21.6 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

2/6

Not Qualified

4.7 mm

Other Memory ICs

6 V

2 V

5

NO

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

74HCT670D,652 by NXP Semiconductors

74HCT670D,652

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Access Time: 60 ns;

60 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

74HCT670D,653 by NXP Semiconductors

74HCT670D,653

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

60 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

PCF8570P/F5,112 by NXP Semiconductors

PCF8570P/F5,112

NXP Semiconductors

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e4;

2-WIRE I2C SERIAL INTERFACE

.1 MHz

COMMON

R-PDIP-T8

e4

9.5 mm

2048 bit

STANDARD SRAM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

.0000004 Amp

1 V

SRAMs

.2 mA

6 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

PCF8570T/F5,512 by NXP Semiconductors

PCF8570T/F5,512

NXP Semiconductors

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/5;

3400 ns

2-WIRE I2C SERIAL INTERFACE

.1 MHz

COMMON

R-PDSO-G8

e4

7.55 mm

2048 bit

STANDARD SRAM

8

2

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

NO

PLASTIC/EPOXY

SOP

SOP8,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.65 mm

.0000004 Amp

1 V

SRAMs

.2 mA

6 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.5 mm

PCF8570T/F5,518 by NXP Semiconductors

PCF8570T/F5,518

NXP Semiconductors

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Technology: CMOS;

3400 ns

2-WIRE I2C SERIAL INTERFACE

.1 MHz

COMMON

R-PDSO-G8

e4

7.55 mm

2048 bit

STANDARD SRAM

8

2

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

NO

PLASTIC/EPOXY

SOP

SOP8,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.65 mm

1 V

SRAMs

6 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

7.5 mm

IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution

IS62WV1288BLL-55HLI-TR

Integrated Silicon Solution

IS62WV1288BLL-55HLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time. Operating at 3V, it's ideal for industrial applications requiring fast and reliable memory storage. With a compact size of 11.8mm x 8mm and low power consumption, it's suitable for various embedded systems.

55 ns

R-PDSO-G32

e3

11.8 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.25 mm

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution

IS62WV1288BLL-55QLI-TR

Integrated Silicon Solution

IS62WV1288BLL-55QLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 55ns access time, operating at 3.6V max supply voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and 1048576-bit memory density, it offers fast data retrieval for various electronic devices.

55 ns

R-PDSO-G32

e3

20.445 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

3 mm

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

11.305 mm

IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution

IS62WV1288BLL-55TLI-TR

Integrated Silicon Solution

IS62WV1288BLL-55TLI-TR by Integrated Silicon Solution is a 128KX8 SRAM with 55 ns access time, operating at 3.6 V max voltage. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With 131072 words and memory density of 1048576 bits, this CMOS technology-based SRAM offers reliable parallel data storage solutions.

55 ns

R-PDSO-G32

e3

18.4 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

Not Qualified

1.2 mm

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

N01L63W2AT25I by Onsemi

N01L63W2AT25I

Onsemi

N01L63W2AT25I by Onsemi is a 64KX16 SRAM with 3V nominal voltage, operating in industrial temperature range. It features 70ns max access time, 3-STATE output characteristics, and common input/output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W2AB27I by Onsemi

N04L63W2AB27I

Onsemi

N04L63W2AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.

70 ns

COMMON

R-PBGA-B48

8 mm

4194304 bit

STANDARD SRAM

16

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N04L63W2AT27IT by Onsemi

N04L63W2AT27IT

Onsemi

N04L63W2AT27IT by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast access time and low standby current.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N04L63W2AT27I by Onsemi

N04L63W2AT27I

Onsemi

N04L63W2AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.

70 ns

COMMON

R-PDSO-G44

18.41 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N25S818HAS21I by Onsemi

N25S818HAS21I

Onsemi

N25S818HAS21I by Onsemi is a 32Kx8 SRAM with 16MHz clock frequency, operating at -40 to 85°C. It features separate I/O, 1.8V supply voltage, and 3-STATE output. Ideal for industrial applications requiring high-speed synchronous memory in a small outline package.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

Not Qualified

1.75 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.91 mm

N25S818HAT21I by Onsemi

N25S818HAT21I

Onsemi

N25S818HAT21I by Onsemi is a 32KX8 SRAM with 1.8V supply, operating at -40 to 85 °C. It features synchronous mode, 16 MHz clock frequency, and 0.65mm terminal pitch. Ideal for industrial applications requiring high-speed memory with low power consumption.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

262144 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8

Not Qualified

1.1 mm

.0000005 Amp

1.7 V

SRAMs

10 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

N01L83W2AN25I by Onsemi

N01L83W2AN25I

Onsemi

N01L83W2AN25I by Onsemi is a 128Kx8 SRAM with 3.6V max supply voltage, operating at -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact spaces.

70 ns

COMMON

R-PDSO-G32

11.8 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N01L83W2AT25I by Onsemi

N01L83W2AT25I

Onsemi

N01L83W2AT25I by Onsemi is a 128Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current, it's ideal for high-speed memory requirements.

70 ns

COMMON

R-PDSO-G32

18.4 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

14 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

8 mm

N02L63W3AB25IT by Onsemi

N02L63W3AB25IT

Onsemi

Onsemi's N02L63W3AB25IT is a 128KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a low profile grid array package suitable for industrial applications, offering fast access time of 70ns and memory density of 2097152 bits.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AB25I by Onsemi

N02L63W3AB25I

Onsemi

N02L63W3AB25I by Onsemi is a 128Kx16 SRAM with 70ns access time, operating at 2.5/3.3V. It features a low profile grid array package and supports asynchronous operation. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

70 ns

COMMON

R-PBGA-B48

8 mm

2097152 bit

STANDARD SRAM

16

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.34 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

6 mm

N02L63W3AT25IT by Onsemi

N02L63W3AT25IT

Onsemi

N02L63W3AT25IT by Onsemi is a 128KX16 SRAM with 131072 words, operating at 2.5/3.3V. It features a small outline package, -40 to 85 °C temperature range, and 70ns access time. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

70 ns

COMMON

R-PDSO-G44

18.41 mm

2097152 bit

STANDARD SRAM

16

1

44

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

3-STATE

PLASTIC/EPOXY

LSSOP

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

PARALLEL

2.5/3.3

Not Qualified

1.25 mm

.00001 Amp

1.8 V

SRAMs

16 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

N64S830HAS22I by Onsemi

N64S830HAS22I

Onsemi

N64S830HAS22I by Onsemi is an 8KX8 SRAM with 3-STATE output, operating at 20 MHz clock frequency. It has a memory density of 65536 bit and operates at industrial temperature grade. Ideal for applications requiring fast synchronous memory access in compact designs.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.9 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

Not Qualified

1.75 mm

.000004 Amp

2.3 V

SRAMs

10 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

N64S830HAT22I by Onsemi

N64S830HAT22I

Onsemi

N64S830HAT22I by Onsemi is an 8Kx8 SRAM with 3.6V max supply voltage, 20MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.

20 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

3

1

1, (3 LINE)

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

2.5/3.3

Not Qualified

1.2 mm

.000004 Amp

2.3 V

SRAMs

10 mA

3.6 V

2.5 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm