Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N02L83W2AN25IT
Onsemi
N02L83W2AN25IT by Onsemi is a 256Kx8 SRAM with 3-STATE output, operating at 3V. It features a small outline, thin profile package and operates in industrial temperature range. Ideal for applications requiring fast access times and low standby current.
70 ns
COMMON
R-PDSO-G32
11.8 mm
2097152 bit
STANDARD SRAM
8
1
32
262144 words
256K
ASYNCHRONOUS
85 Cel
-40 Cel
256KX8
3-STATE
PLASTIC/EPOXY
TSOP1
TSSOP32,.56,20
RECTANGULAR
SMALL OUTLINE, THIN PROFILE
PARALLEL
3/3.3
Not Qualified
1.25 mm
.00001 Amp
1.8 V
SRAMs
16 mA
3.6 V
2.3 V
3
YES
CMOS
INDUSTRIAL
GULL WING
.5 mm
DUAL
8 mm
N02L83W2AN25I
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 256K;
N02L83W2AT25I
N02L83W2AT25I by Onsemi is a 256Kx8 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.
18.4 mm
TSSOP32,.8,20
N08L63W2AB27I
Onsemi's N08L63W2AB27I is a 512Kx16 SRAM with 3-STATE output, operating at 2.5/3.3V. It features a thin profile grid array package suitable for industrial applications requiring fast access times of 85ns and low standby current of 0.00001Amp.
85 ns
R-PBGA-B48
10 mm
8388608 bit
16
48
524288 words
512K
512KX16
TFBGA
BGA48,6X8,30
GRID ARRAY, THIN PROFILE, FINE PITCH
2.5/3.3
1.2 mm
15 mA
BALL
.75 mm
BOTTOM
N25S830HAS22I
N25S830HAS22I by Onsemi is a 32KX8 SRAM with synchronous operation and 3-STATE output. It operates at 3V, has a clock frequency of 20MHz, and is ideal for industrial applications requiring high-speed memory access in small outline packages.
20 MHz
SEPARATE
R-PDSO-G8
e3
4.9 mm
262144 bit
1, (3 LINE)
32768 words
32K
SYNCHRONOUS
32KX8
SOP
SOP8,.25
SMALL OUTLINE
SERIAL
260
1.75 mm
.000004 Amp
2.7 V
10 mA
MATTE TIN
1.27 mm
30
3.91 mm
N25S830HAT22I
N25S830HAT22I by Onsemi is a 32KX8 SRAM with 3-STATE output, operating at 20 MHz. Ideal for industrial applications, it features a supply voltage of 2.7-3.6V and operates in synchronous mode with separate I/O type. Package style is small outline, thin profile, shrink pitch, making it suitable for compact designs.
4.4 mm
TSSOP
TSSOP8,.25
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
1.1 mm
.65 mm
3 mm
N01L63W3AT25IT
N01L63W3AT25IT by Onsemi is a 64KX16 SRAM with 70ns access time, operating at 3V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in harsh environments.
R-PDSO-G44
18.41 mm
1048576 bit
44
65536 words
64K
64KX16
LSSOP
TSOP44,.46,32
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
14 mA
.8 mm
10.16 mm
N04L63W1AB27I
N04L63W1AB27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a low profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access times and high memory density.
4194304 bit
256KX16
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.34 mm
6 mm
N04L63W1AT27I
N04L63W1AT27I by Onsemi is a 256Kx16 SRAM with 3-STATE output, operating at 3V. It features a small outline package, suitable for industrial applications. With a max access time of 70ns and low standby current of 0.00001A, it offers reliable memory storage in various electronic devices.
N08L6182AB7I
N08L6182AB7I by Onsemi is a 512Kx16 SRAM with 85ns access time, operating at 1.8V. It features a thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage in common asynchronous mode.
1.8/2
1.2 V
2.2 V
1.65 V
1.8
N64S818HAS21I
N64S818HAS21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply, and -40 to 85 °C operating range. Ideal for industrial applications requiring small outline package and separate I/O type in a synchronous mode setup.
16 MHz
65536 bit
8192 words
8K
8KX8
.0000005 Amp
1.7 V
1.95 V
N64S818HAT21I
N64S818HAT21I by Onsemi is an 8KX8 SRAM with 16 MHz clock frequency, 1.8V supply voltage, and -40 to 85 °C operating temperature range. Ideal for industrial applications requiring fast synchronous memory access in a compact 0.65mm pitch package.
M68AW256ML70ND6T
STMicroelectronics
M68AW256ML70ND6T from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.
e0
TSOP2
.000009 Amp
1.5 V
20 mA
TIN LEAD
IDT71024S12TYI8
Integrated Device Technology
IDT71024S12TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and offers 3-STATE output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in parallel configuration.
12 ns
R-PDSO-J32
20.96 mm
131072 words
128K
128KX8
SOJ
SOJ32,.34
225
5
3.76 mm
.01 Amp
4.5 V
160 mA
5.5 V
Tin/Lead (Sn85Pb15)
J BEND
7.62 mm
IDT71024S15TYI8
IDT71024S15TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 15ns and is suitable for industrial applications requiring fast and reliable memory storage in a small outline package. With parallel interface and common I/O type, it offers high performance in various electronic devices.
15 ns
155 mA
M68AW256ML70ZB6
M68AW256ML70ZB6 from STMicroelectronics is a 256Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at 3V, supports industrial temp ranges (-40 °C to 85 °C), and features a thin profile grid array package. Ideal for high-speed data storage in embedded systems.
7 mm
M68AW128ML70ZB6
M68AW128ML70ZB6 from STMicroelectronics is a 128Kx16 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temp ranges (-40 °C to 85°C). Ideal for high-speed data storage in compact applications.
128KX16
CY7C1019BV33-15ZI
Cypress Semiconductor
CY7C1019BV33-15ZI by Cypress Semiconductor is a 128Kx8 SRAM with 15ns access time, operating at 3.3V. It is ideal for industrial applications requiring high-speed and low-power memory solutions in a small outline package.
20.95 mm
3.63 V
2.97 V
3.3
M68AW512ML70ND6
M68AW512ML70ND6 from STMicroelectronics is a 512Kx16 asynchronous SRAM with a max access time of 70 ns. It operates b/w 2.7V and 3.6V, suitable for industrial applications due to its -40 °C to 85 °C temp range. Its compact SOIC package ensures efficient surface mounting.
CY7C1383C-100AC
CY7C1383C-100AC by Cypress Semiconductor is a 1MX18 SRAM with 100 terminals, operating at 100 MHz. It has a synchronous mode and common I/O type, suitable for applications requiring fast access times and high memory density. The package is rectangular in shape, surface mountable, and operates at temperatures b/w 0 to 70°C.
8.5 ns
FLOW-THROUGH ARCHITECTURE
100 MHz
R-PQFP-G100
20 mm
18874368 bit
18
100
1048576 words
1M
70 Cel
0 Cel
1MX18
LQFP
QFP100,.63X.87
FLATPACK, LOW PROFILE
2.5/3.3,3.3
1.6 mm
.07 Amp
3.14 V
175 mA
3.135 V
COMMERCIAL
QUAD
14 mm
SNJ54LS670W
Texas Instruments
SNJ54LS670W by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and offers an access time of 45ns. Ideal for military applications requiring fast and reliable memory storage in a compact flatpack package.
45 ns
35 MHz
R-GDFP-F16
10.3 mm
16 bit
4
4 words
125 Cel
-55 Cel
4X4
NO
CERAMIC, GLASS-SEALED
DFP
FL16,.3
FLATPACK
MIL-PRF-38535
2.03 mm
.05 Amp
Other Memory ICs
5.25 V
4.75 V
TTL
MILITARY
FLAT
6.73 mm
M68AW031AM70N6T
M68AW031AM70N6T from STMicroelectronics is a 32Kx8 asynchronous SRAM with a max access time of 70 ns. It operates at a nominal voltage of 3V and supports industrial temperature ranges (-40 °C to 85 °C). Ideal for applications requiring fast, reliable memory in compact designs.
R-PDSO-G28
28
TSSOP28,.53,22
.000006 Amp
30 mA
.55 mm
CY62168DV30LL-55BVI
CY62168DV30LL-55BVI by Cypress is a 2MX8 SRAM with 3V supply, 55ns access time, and 16777216-bit memory density. Ideal for industrial applications requiring fast, common I/O asynchronous operation in a compact grid array package.
55 ns
9.5 mm
16777216 bit
2097152 words
2M
2MX8
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
220
1 mm
23K640-E/P
Microchip Technology
23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.
R-PDIP-T8
9.271 mm
DIP
DIP8,.3
IN-LINE
TS 16949
5.334 mm
AUTOMOTIVE
THROUGH-HOLE
2.54 mm
23K640-E/ST
23K640-E/ST by Microchip Technology is a CMOS SRAM with 8Kx8 organization, operating at up to 16 MHz. It features separate I/O, 3-state output characteristics, and operates in automotive temperature grade applications.
40
23K640T-E/ST
23K640T-E/ST by Microchip Technology is a 8Kx8 SRAM with 16MHz clock frequency, operating at -40 to 125°C. It has separate I/O, 3-state output, and serial interface. Ideal for automotive applications due to TS16949 screening level and low standby current of 0.00001A.
IS63LV1024L-12BLI
Integrated Silicon Solution
IS63LV1024L-12BLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a thin profile grid array package and offers a fast access time of 12ns. Ideal for industrial applications requiring high-speed memory in compact form factors.
R-PBGA-B36
e1
36
BGA36,6X8,30
.0015 Amp
2 V
100 mA
3.45 V
3.15 V
TIN SILVER COPPER
10
IS63LV1024L-12JL
IS63LV1024L-12JL by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 3.3V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a small outline package.
20.955 mm
3.56 mm
90 mA
3 V
IDT71256L35YI8
IDT71256L35YI8 by Integrated Device Technology is a 32Kx8 SRAM with 35ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous operation. Ideal for applications requiring fast and reliable memory storage in industrial environments.
35 ns
R-PDSO-J28
17.9324 mm
SOJ28,.34
3.556 mm
.0002 Amp
105 mA
7.5184 mm
IS61C1024AL-12KLI
IS61C1024AL-12KLI by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.
SOJ32,.44
.00045 Amp
50 mA
Matte Tin (Sn) - annealed
IDT71016S12PHGI
IDT71016S12PHGI by Integrated Device Technology is a 64KX16 SRAM with an operating mode of asynchronous and common input/output type. It has a max access time of 12 ns and is commonly used in industrial applications.
210 mA
IDT71016S12PHGI8
IDT71016S12PHGI8 by Integrated Device Technology is a 64Kx16 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and is designed for industrial applications requiring fast and reliable memory storage. With a compact rectangular package style and surface-mount capability, it offers high performance in a small footprint.
IDT71124S12YGI
IDT71124S12YGI by Integrated Device Technology is a 128Kx8 SRAM with asynchronous operation, 3-STATE output, and 12 ns access time. It is ideal for industrial applications requiring fast and reliable memory storage in a small outline package. With a supply voltage range of 4.5V to 5.5V, this CMOS technology-based SRAM offers high performance in harsh environments.
3.683 mm
IDT71124S12YGI8
IDT71124S12YGI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.
IDT71V124SA20PHGI
IDT71V124SA20PHGI by Integrated Device Technology is a 128Kx8 SRAM with 3.3V supply, operating in asynchronous mode. It features a max access time of 20ns and offers 131072 words of memory. Ideal for industrial applications requiring fast and reliable data storage with common I/O type and 3-STATE output characteristics.
20 ns
TSOP32,.46
115 mA
IDT71V124SA20PHGI8
IDT71V124SA20PHGI8 is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 20ns access time, and 1.27mm terminal pitch. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.
IS61LV51216-10TLI
IS61LV51216-10TLI by Integrated Silicon Solution is a 512KX16 SRAM with 10 ns access time, operating at 3.3V. It features a small outline package, industrial temperature grade, and 44 terminals for parallel interfacing. Ideal for high-speed memory applications in industrial environments.
10 ns
18.415 mm
.025 Amp
110 mA
IS62WV10248DBLL-55TLI
IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.
1MX8
.00004 Amp
1.4 V
22 mA
CY62167DV30LL-45ZXI
CY62167DV30LL-45ZXI by Cypress Semiconductor is a 1MX16 SRAM with 3.6V max supply voltage, 45ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable data storage in a compact thin profile package.
CONFIGURABLE AS 2M X 8 ALSO
R-PDSO-G48
e4
1MX16
TSSOP48,.8,20
37 mA
Nickel/Palladium/Gold (Ni/Pd/Au)
20
12 mm
CY7C1021CV33-10ZXI
CY7C1021CV33-10ZXI by Cypress Semiconductor is a 64KX16 SRAM with 3.3V supply, 10ns access time, and 44 terminals. It operates in industrial temperatures and has a memory density of 1048576 bits. Ideal for applications requiring fast, common I/O type asynchronous memory with small outline package style.
1.194 mm
.005 Amp
CY7C1041CV33-20ZSXE
CY7C1041CV33-20ZSXE by Cypress is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 125°C. It features asynchronous mode, 20ns access time, and AEC-Q100 screening for automotive applications. The memory IC has a compact thin profile package with 0.8mm terminal pitch suitable for space-constrained designs.
AEC-Q100
.015 Amp
75 mA
CY7C106D-10VXI
CY7C106D-10VXI by Cypress Semiconductor is a 256KX4 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for parallel memory applications. With 262144 words and 1048576-bit density, it offers common I/O type and 3-STATE output characteristics.
256KX4
SOJ28,.44
3.7592 mm
.003 Amp
80 mA
NICKEL PALLADIUM GOLD
AS6C4008-55SINTR
Alliance Memory
Alliance Memory's AS6C4008-55SINTR is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features common I/O type and 3-state output characteristics in a small outline package. With parallel interface and low standby current, it suits various embedded systems.
e3/e6
512KX8
SOP32,.56
3/5
2.997 mm
.00003 Amp
60 mA
11.303 mm
CY62157DV30LL-55BVXI
CY62157DV30LL-55BVXI by Cypress is a 512Kx16 SRAM with 55ns access time, operating at 3V. It features a very thin profile package and common I/O type, suitable for industrial applications requiring fast and reliable memory storage.
Tin/Silver/Copper (Sn/Ag/Cu)
CY62157DV30LL-55ZSXI
CY62157DV30LL-55ZSXI by Cypress Semiconductor is a 512Kx16 SRAM with 3.3V nominal voltage, 55ns access time, and 8388608-bit memory density. It is used in industrial applications requiring fast and reliable data storage with a parallel interface.
IS61LV25616AL-10TLI
IS61LV25616AL-10TLI by Integrated Silicon Solution is a 256KX16 SRAM with 3.3V supply, operating at -40 to 85 °C. It features 10ns access time, 110mA max supply current, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in compact form factor.
IS61LV5128AL-10KLI
IS61LV5128AL-10KLI by Integrated Silicon Solution is a 512KX8 SRAM with 3.3V supply, 10ns access time, and 95mA max supply current. It's used in industrial applications requiring fast, common I/O asynchronous memory with 36 terminals and small outline package style.
R-PDSO-J36
23.495 mm
SOJ36,.44
3.75 mm
.02 Amp
95 mA
IS63LV1024L-10HL
IS63LV1024L-10HL by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at 0-70°C. It features asynchronous operation, 10ns access time, and 32 terminals in a small outline package. Ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.
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