Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CY7C1069DV33-10ZSXIT
Cypress Semiconductor
CY7C1069DV33-10ZSXIT by Cypress Semiconductor is a 3.3V SRAM with 2Mx8 organization, operating at -40 to 85°C. It features a fast access time of 10ns, ideal for industrial applications requiring high-speed memory solutions in a compact thin profile package.
10 ns
COMMON
R-PDSO-G54
e3
22.415 mm
16777216 bit
STANDARD SRAM
8
3
1
54
2097152 words
2M
ASYNCHRONOUS
85 Cel
-40 Cel
2MX8
3-STATE
PLASTIC/EPOXY
TSOP2
TSOP54,.46,32
RECTANGULAR
SMALL OUTLINE, THIN PROFILE
PARALLEL
260
3.3
Not Qualified
1.2 mm
.025 Amp
2 V
SRAMs
175 mA
3.6 V
3 V
YES
CMOS
INDUSTRIAL
Matte Tin (Sn)
GULL WING
.8 mm
DUAL
20
10.16 mm
CY7C1380D-167AXCT
CY7C1380D-167AXCT by Cypress Semiconductor is a 512Kx36 SRAM with synchronous operation and 3-STATE output. It operates at a max clock frequency of 167 MHz, suitable for applications requiring fast access times such as networking equipment and high-performance computing systems. With a low profile flatpack package style and common I/O type, it offers reliable performance in compact designs.
3.4 ns
PIPELINED ARCHITECTURE
167 MHz
R-PQFP-G100
20 mm
18874368 bit
36
100
524288 words
512K
SYNCHRONOUS
70 Cel
0 Cel
512KX36
LQFP
QFP100,.63X.87
FLATPACK, LOW PROFILE
2.5/3.3,3.3
1.6 mm
.07 Amp
275 mA
3.135 V
COMMERCIAL
MATTE TIN
.65 mm
QUAD
40
14 mm
CY7C199CNL-15VXIT
CY7C199CNL-15VXIT by Cypress Semiconductor is a 32Kx8 SRAM with 3-STATE output, operating at -40 to 85°C. It has a supply voltage of 4.5-5.5V and max access time of 15ns. Ideal for industrial applications requiring fast, asynchronous memory with common I/O type in small outline package.
15 ns
R-PDSO-J28
e4
17.907 mm
262144 bit
28
32768 words
32K
32KX8
SOJ
SOJ28,.34
SMALL OUTLINE
5
3.556 mm
.00015 Amp
80 mA
5.5 V
4.5 V
Nickel/Palladium/Gold (Ni/Pd/Au)
J BEND
1.27 mm
30
7.5 mm
CY7C199D-10ZXIT
CY7C199D-10ZXIT by Cypress Semiconductor is a 32Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and is suitable for industrial applications requiring fast and reliable memory storage in parallel mode.
R-PDSO-G28
11.8 mm
TSOP1
TSSOP28,.53,22
.003 Amp
NICKEL PALLADIUM GOLD
.55 mm
8 mm
N02L63W3AT25I
Onsemi
N02L63W3AT25I by Onsemi is a 128Kx16 SRAM with 131072 words, operating at 2.5/3.3V. It features a max access time of 70ns and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in compact electronic devices.
70 ns
R-PDSO-G44
18.41 mm
2097152 bit
16
44
131072 words
128K
128KX16
LSSOP
TSOP44,.46,32
SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
2.5/3.3
1.25 mm
.00001 Amp
1.8 V
16 mA
2.3 V
CY7C1061AV33-10ZXCT
CY7C1061AV33-10ZXCT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, operating in asynchronous mode. It features 10ns access time, 70°C max temp, and 275mA supply current. Ideal for applications requiring fast memory access in commercial-grade devices.
1048576 words
1M
1MX16
.05 Amp
CY7C1061AV33-10ZXIT
CY7C1061AV33-10ZXIT by Cypress Semiconductor is a 3.3V SRAM with 1MX16 organization, 10ns access time, and 16-bit memory width. Ideal for industrial applications requiring fast and reliable parallel memory operations in a compact package.
IS61WV25616EDBLL-10TLI-TR
Integrated Silicon Solution
STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
AS6C4008A-55ZIN
Alliance Memory
Alliance Memory's AS6C4008A-55ZIN is a 512Kx8 SRAM with 55ns access time, operating at 3.6V max voltage. Ideal for industrial applications, it features asynchronous operation and CMOS technology in a small outline package. With parallel interface and gull wing terminals, this memory IC offers reliable performance in harsh environments.
55 ns
R-PDSO-G32
e3/e6
20.95 mm
4194304 bit
32
512KX8
2.7 V
11.76 mm
23A1024-I/P
Microchip Technology
Microchip Technology's 23A1024-I/P is a CMOS SRAM with 128KX8 organization, operating at 1.8/2V. It features synchronous operation, 20MHz clock frequency, and 131072 words capacity. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package style.
20 MHz
COMMON/SEPARATE
R-PDIP-T8
9.271 mm
1048576 bit
128KX8
NO
DIP
DIP8,.3
IN-LINE
SERIAL
1.8/2
TS 16949
5.334 mm
.000004 Amp
1.7 V
10 mA
2.2 V
THROUGH-HOLE
2.54 mm
7.62 mm
23LCV512-I/P
23LCV512-I/P by Microchip Technology is a 64KX8 SRAM with 20 MHz clock frequency, operating at -40 to 85 °C. It features a serial interface, 3-STATE output, and common I/O type. Ideal for industrial applications requiring high-speed synchronous memory in a compact IN-LINE package.
524288 bit
65536 words
64K
64KX8
2.5 V
IS61WV6416EEBLL-10TLI
IS61WV6416EEBLL-10TLI by Integrated Silicon Solution is a 64Kx16 SRAM with 10ns access time, operating at 3.3V. It features a small outline package, suitable for industrial temperature grades. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
64KX16
.004 Amp
25 mA
2.4 V
AS7C316096A-10TINTR
Alliance Memory's AS7C316096A-10TINTR is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, common I/O type, and 3-state output characteristics.
R-PDSO-G48
18.4 mm
48
TSSOP48,.8,20
3/3.3
.04 Amp
1.5 V
160 mA
.5 mm
12 mm
AS7C316096A-10TIN
Alliance Memory's AS7C316096A-10TIN is a 2MX8 SRAM with 10ns access time, operating at 3V. Ideal for industrial applications, it features a small outline package, 48 terminals, and common I/O type. With a memory density of 16Mbit, this CMOS technology-based chip offers reliable performance in various electronic devices.
AS6C3216-55TIN
Alliance Memory's AS6C3216-55TIN is a 2MX16 SRAM with 55 ns access time, operating at 3V. Ideal for industrial applications, it offers a memory density of 33554432 bits and features a small outline package with thin profile. With common I/O type and asynchronous operation, this CMOS technology-based SRAM is suitable for various parallel memory applications.
33554432 bit
2MX16
.002 Amp
1.2 V
AS7C316098A-10TIN
Alliance Memory's AS7C316098A-10TIN is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and offers 3-state output capability. With a max supply voltage of 3.6V, this CMOS technology memory chip supports parallel operation with common I/O type.
CY62256NLL-55ZXIT
CY62256NLL-55ZXIT by Cypress Semiconductor is a 32KX8 SRAM with a max access time of 55 ns. It operates asynchronously at a nominal voltage of 5V and has a small outline, thin profile package style. It is commonly used in industrial applications requiring high-speed memory storage.
50 mA
CY62256NLL-70SNXCT
CY62256NLL-70SNXCT by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.
17.9324 mm
SOP
SOP28,.45
2.794 mm
.000005 Amp
7.5057 mm
CY7C1049DV33-10ZSXIT
CY7C1049DV33-10ZSXIT by Cypress Semiconductor is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features a parallel interface, 10ns access time, and low standby current of 0.01Amp. Ideal for industrial applications requiring fast and reliable memory storage in a compact thin profile package.
18.415 mm
1.194 mm
.01 Amp
90 mA
AS7C1024B-15JCNTR
Alliance Memory's AS7C1024B-15JCNTR is a 128Kx8 SRAM with 15ns access time, ideal for commercial applications. Operating at 5V, it offers 1048576-bit memory density and features asynchronous mode. With a small outline package style, it is suitable for surface mount designs in various electronic devices.
R-PDSO-J32
20.995 mm
3.7084 mm
AS7C316098A-10BINTR
Alliance Memory's AS7C316098A-10BINTR is a 1MX16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and offers high memory density of 16Mbit. With parallel interface and CMOS technology, this IC is suitable for various embedded systems requiring fast and reliable data storage.
R-PBGA-B48
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.4 mm
BALL
.75 mm
BOTTOM
6 mm
AS7C34096A-12JINTR
Alliance Memory's AS7C34096A-12JINTR is a 512Kx8 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it offers parallel interface, small outline package style, and moisture sensitivity level of 3.
12 ns
R-PDSO-J36
23.495 mm
3.7592 mm
AS7C38096A-10BIN
Alliance Memory's AS7C38096A-10BIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a low profile grid array package and CMOS technology. With parallel interface and 8388608-bit memory density, it suits high-speed data processing needs.
8388608 bit
1MX8
AS7C38096A-10TIN
Alliance Memory's AS7C38096A-10TIN is a 1MX8 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 8388608 bits and operates in parallel mode with a package size of 18.415mm x 10.16mm x 1.2mm.
AS7C34098A-10TINTR
Alliance Memory's AS7C34098A-10TINTR is a 256Kx16 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package and operates in asynchronous mode. With a memory density of 4Mbit, this CMOS technology-based chip offers reliable parallel data storage.
262144 words
256K
256KX16
HM216514TTI5SE
Renesas Electronics
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 524288 words;
512KX16
NOT SPECIFIED
IS61NLP102418B-200TQLI
IS61NLP102418B-200TQLI by Integrated Silicon Solution is a 1MX18 SRAM with 1048576 words, 18874368 bit memory density, and 3 ns max access time. Ideal for industrial applications requiring fast synchronous operation in a compact FLATPACK package with low profile design.
3 ns
18
1MX18
3.465 V
71024S25TYG8
Integrated Device Technology
STANDARD SRAM; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
71024S25TYGI8
STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
71024S25TYGI
STANDARD SRAM; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
M74HC670B1R
STMicroelectronics
STMicroelectronics M74HC670B1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, CMOS technology, and 3-STATE output. Ideal for military applications due to its -55 to 125 °C temperature range and through-hole terminal form.
280 ns
R-PDIP-T16
16 bit
4
4 words
125 Cel
-55 Cel
4X4
DIP16,.3
2/6
5.1 mm
Other Memory ICs
6 V
4.5
MILITARY
M74HC670M1R
STMicroelectronics M74HC670M1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, operates in asynchronous mode, and has a temperature range of -55 to 125 °C. Ideal for military applications due to its small outline package and CMOS technology.
R-PDSO-G16
9.9 mm
SOP16,.25
1.75 mm
3.9 mm
SNJ54LS670FK
Texas Instruments
SNJ54LS670FK by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and has an access time of 45ns. Ideal for military applications requiring high-speed memory in a compact chip carrier package.
45 ns
35 MHz
S-CQCC-N20
e0
8.89 mm
CERAMIC, METAL-SEALED COFIRED
QCCN
LCC20,.35SQ
SQUARE
CHIP CARRIER
MIL-PRF-38535
2.03 mm
5.25 V
4.75 V
TTL
TIN LEAD
NO LEAD
CY62256LL-70PC
CY62256LL-70PC by Cypress Semiconductor is a 32KX8 SRAM with 70ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast memory access in a rectangular package.
R-PDIP-T28
36.322 mm
DIP28,.6
5.08 mm
15.24 mm
CY62256L-70SNC
CY62256L-70SNC by Cypress Semiconductor is a 32Kx8 SRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-STATE output characteristics. Ideal for commercial applications requiring fast memory access in a small outline package.
SOP28,.5
225
.00002 Amp
Tin/Lead (Sn/Pb)
CY62256LL-70ZI
CY62256LL-70ZI by Cypress Semiconductor is a 32KX8 SRAM with 70 ns access time, operating at 5V. It features common I/O type, 3-STATE output characteristics, and GULL WING terminal form. Ideal for industrial applications requiring fast and reliable memory storage in a compact package.
HT6256DC
Honeywell
Honeywell's HT6256DC is a 32Kx8 SRAM with 3-STATE output, operating at -55 to 225°C. It features a parallel interface, 50ns access time, and MILITARY temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.
50 ns
R-CDIP-T28
35.56 mm
225 Cel
4.445 mm
.00033 Amp
4 mA
MOS
M48Z02-150PC1
M48Z02-150PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features asynchronous mode and common I/O type, suitable for commercial applications. With a memory density of 16384 bit, this CMOS technology-based IC offers parallel operation in a rectangular package style.
R-PDIP-T24
34.545 mm
16384 bit
24
2048 words
2K
2KX8
DIP24,.6
9.65 mm
M48Z02-70PC1
M48Z02-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 5V supply voltage, operating in asynchronous mode. It features 3-STATE output characteristics and offers 16384 bits memory density. Ideal for applications requiring common I/O type and parallel operation at temperatures up to 70°C.
M48Z12-70PC1
M48Z12-70PC1 by STMicroelectronics is a 2Kx8 SRAM with 3-STATE output, operating at 5V. It features a rectangular package style, asynchronous mode, and common I/O type. Ideal for applications requiring standard SRAM memory technology in commercial temperature grades.
IDT71024S15TYI
IDT71024S15TYI is a 128Kx8 SRAM with 15ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring fast and reliable memory storage. This small outline package offers parallel interface with 32 terminals in a rectangular shape.
20.96 mm
SOJ32,.34
3.759 mm
155 mA
LH5164A-10L
Sharp Corporation
LH5164A-10L by Sharp Corp is an 8Kx8 SRAM with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Ideal for commercial applications requiring fast memory access in a compact IN-LINE package.
100 ns
36 mm
65536 bit
8192 words
8K
-10 Cel
8KX8
5.2 mm
CY62147EV30LL-45B2XA
CY62147EV30LL-45B2XA by Cypress Semiconductor is a 256Kx16 SRAM with 3.6V max supply voltage, 45ns access time, and industrial temperature grade. It features a very thin profile grid array package for common asynchronous applications in parallel memory systems.
e1
VFBGA
BGA48,6X8,30
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1 mm
.000007 Amp
20 mA
TIN SILVER COPPER
IDT71256SA20Y
IDT71256SA20Y by Integrated Device Technology is a 32Kx8 SRAM with 20ns access time, operating at 5V. It features a small outline package and offers common I/O type with 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.
20 ns
.015 Amp
145 mA
7.5184 mm
IDT71256SA25YI
STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;
25 ns
Tin/Lead (Sn85Pb15)
23A256-I/SN
23A256-I/SN by Microchip Technology is a 32Kx8 SRAM with 16 MHz clock frequency, operating at 1.8V. It features separate I/O, synchronous operation, and 3-STATE output. Ideal for industrial applications requiring high-speed memory access in a small outline package.
16 MHz
SEPARATE
R-PDSO-G8
4.9 mm
SOP8,.23
1.8
.000001 Amp
1.95 V
23A640-I/P
23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.
23A640-I/SN
Microchip Technology's 23A640-I/SN is an 8Kx8 SRAM with a memory density of 65536 bit. Operating at 1.8V, it offers a max clock frequency of 16MHz and features synchronous operation. Ideal for industrial applications requiring high-speed data storage in compact spaces.
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