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TMS4030-1NL

Texas Instruments

TMS4030-1NL by Texas Instruments

TMS4030-1NL by Texas Instruments is a 4KX1 DRAM with 4096-bit memory density, 250 ns access time, and 64 refresh cycles. It has separate I/O type and operates b/w 0°C to 70°C. Ideal for applications requiring low-power consumption and high-speed data storage in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,641 parts In-Stock

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Digiode

USA . 2,432 parts In-Stock

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2,432

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R&J Components

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 982 parts In-Stock

1+ parts

$4.802

100+ parts

-

1k+ parts

$5.309

10k+ parts

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982

$4.802

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$5.309

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DigiPath Technology Company

USA . 1,511 parts In-Stock

1+ parts

$5.287

100+ parts

$4.864

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1,511

$5.287

$4.864

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ChromeModa Solutions

Germany . 3,110 parts In-Stock

1+ parts

$5.395

100+ parts

$4.424

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3,110

$5.395

$4.424

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IDEA Electronic Components Group

UK . 1,653 parts In-Stock

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$5.395

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$4.856

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1,653

$5.395

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$4.856

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AZTECH Wire

Italy . 676 parts In-Stock

1+ parts

$8.009

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676

$8.009

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One Stop Electronics

USA . 1,495 parts In-Stock

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$25.000

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1,495

$25.000

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Corphita

USA . 4,819 parts In-Stock

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4,819

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Overview

Elevate your projects with the superior quality and reliability of the Texas Instruments TMS4030-1NL DRAM module. With a reputation for excellence, Texas Instruments delivers cutting-edge technology in a rectangular package body made of durable plastic/epoxy. Ideal for a wide range of applications, this product boasts 4096 words of memory density, 64 refresh cycles, and lightning-fast access times. Trust in Texas Instruments for top-notch performance and innovation that will take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the package, making it a good choice for long-term use.

Package Shape: RECTANGULAR

The rectangular shape allows for easy and efficient placement in devices, optimizing space and ensuring a good fit.

Input/Output Type: SEPARATE

Separate input/output type enables independent control of input and output signals, enhancing flexibility in data processing.

No. of Terminals: 22

With 22 terminals, this product offers a sufficient number of connection points for efficient data transfer and communication.

Package Style (Meter): IN-LINE

The in-line package style provides easy integration into existing systems and designs, ensuring compatibility and ease of use.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can perform reliably in a variety of environmental conditions.

Organization: 4KX1

The 4KX1 organization allows for efficient data storage and retrieval, making this product suitable for a wide range of memory applications.

Output Characteristics: 3-STATE

3-STATE output characteristics provide versatility in signal output, allowing for efficient data transmission and processing.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, this product can function reliably even in low-temperature environments.

Terminal Position: DUAL

Dual terminal position offers redundancy and increased stability in connections, ensuring consistent performance over time.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures compatibility with standard operating environments, making this product suitable for a wide range of applications.

Technology: MOS

MOS technology provides high-speed data processing and low power consumption, making this product energy-efficient and reliable.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables secure and stable connections, ensuring reliable data transfer and communication.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, this product offers efficient power usage and reliable performance in various operating conditions.

No. of Words: 4096 words

4096 words capacity allows for ample data storage and efficient memory management in a variety of applications.

Terminal Pitch: 2.54 mm

With a terminal pitch of 2.54 mm, this product offers easy installation and compatibility with standard connectors, ensuring convenient integration.

No. of Words Code: 4K

4K words code simplifies data organization and management, making this product user-friendly and efficient in data handling.

Memory Density: 4096 bit

4096 bit memory density provides ample storage capacity for data processing, making this product suitable for a wide range of memory-intensive applications.

Refresh Cycles: 64

64 refresh cycles ensure data integrity and reliability over time, making this product a dependable choice for long-term data storage.

Maximum Access Time: 250 ns

With a maximum access time of 250 ns, this product offers high-speed data retrieval and processing, ensuring efficient performance in time-sensitive applications.

Technical Specifications

DRAM TMS4030-1NL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T22

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

22

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP22,.4

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4030-1NL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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