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TMS4050-2JDL

Texas Instruments

TMS4050-2JDL by Texas Instruments

TMS4050-2JDL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 64 refresh cycles, and max access time of 200ns. It has an operating temperature range of 0-70°C and is commonly used in commercial-grade applications requiring high-speed data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,221 parts In-Stock

1+ parts

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6,221

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Digiode

USA . 1,598 parts In-Stock

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1,598

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,992 parts In-Stock

1+ parts

$3.610

100+ parts

-

1k+ parts

$4.124

10k+ parts

-

1,992

$3.610

-

$4.124

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ChromeModa Solutions

Germany . 1,945 parts In-Stock

1+ parts

$4.056

100+ parts

$3.326

1k+ parts

-

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1,945

$4.056

$3.326

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IDEA Electronic Components Group

UK . 1,561 parts In-Stock

1+ parts

$4.056

100+ parts

-

1k+ parts

$3.650

10k+ parts

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1,561

$4.056

-

$3.650

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AZTECH Wire

Italy . 826 parts In-Stock

1+ parts

$12.571

100+ parts

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826

$12.571

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One Stop Electronics

USA . 1,363 parts In-Stock

1+ parts

$16.000

100+ parts

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1,363

$16.000

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Corphita

USA . 3,391 parts In-Stock

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3,391

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DigiPath Technology Company

USA . 741 parts In-Stock

1+ parts

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100+ parts

$3.657

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741

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$3.657

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Overview

Enhance your electronic devices with the TMS4050-2JDL by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments ensures top-notch quality and reliability in their products. The TMS4050-2JDL falls under the category of DRAM, offering a memory density of 4096 bits and a maximum access time of 200 ns. Ideal for a wide range of applications, this product provides customers with exceptional value, performance, and efficiency. Upgrade your devices today with the TMS4050-2JDL and experience the difference Texas Instruments can make in your technology.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides durability and thermal stability, making it ideal for applications requiring high reliability and long-term performance.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient and compact placement on circuit boards, optimizing space utilization.

No. of Terminals: 18

Having 18 terminals provides flexibility in connectivity options and allows for multiple input and output configurations.

Memory Density: 4096 bit

High memory density of 4096 bits enables efficient storage and retrieval of data for various applications.

Refresh Cycles: 64

64 refresh cycles ensure data integrity and prevent loss of information, especially in continuous operation scenarios.

Maximum Access Time: 200 ns

Fast maximum access time of 200 nanoseconds allows for quick data retrieval and processing, suitable for high-speed applications.

Technical Specifications

DRAM TMS4050-2JDL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

18

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4050-2JDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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