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TMS4030JR

Texas Instruments

TMS4030JR by Texas Instruments

TMS4030JR by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 300ns access time, and 64 refresh cycles. It operates b/w -55°C to 85°C, featuring a rectangular ceramic package with 22 terminals in an in-line style. Ideal for applications requiring low-power consumption and high-speed data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,830 parts In-Stock

1+ parts

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4,830

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Digiode

USA . 1,734 parts In-Stock

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1,734

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,208 parts In-Stock

1+ parts

$4.079

100+ parts

-

1k+ parts

$4.539

10k+ parts

-

1,208

$4.079

-

$4.539

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DigiPath Technology Company

USA . 1,443 parts In-Stock

1+ parts

$4.491

100+ parts

$4.132

1k+ parts

-

10k+ parts

-

1,443

$4.491

$4.132

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ChromeModa Solutions

Germany . 5,597 parts In-Stock

1+ parts

$4.583

100+ parts

$3.758

1k+ parts

-

10k+ parts

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5,597

$4.583

$3.758

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IDEA Electronic Components Group

UK . 135 parts In-Stock

1+ parts

$4.583

100+ parts

-

1k+ parts

$4.125

10k+ parts

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135

$4.583

-

$4.125

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AZTECH Wire

Italy . 624 parts In-Stock

1+ parts

$11.975

100+ parts

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624

$11.975

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One Stop Electronics

USA . 190 parts In-Stock

1+ parts

$20.000

100+ parts

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190

$20.000

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Corphita

USA . 4,966 parts In-Stock

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4,966

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Overview

Upgrade your electronics with the TMS4030JR by Texas Instruments, a top-of-the-line DRAM that offers unparalleled quality and reliability. Designed with cutting-edge technology, this product is perfect for a wide range of applications. Experience seamless performance and lightning-fast access times with this innovative solution. Trust Texas Instruments to provide you with the best in the industry, ensuring that your devices run smoothly and efficiently. Say goodbye to slow loading times and hello to a world of possibilities with the TMS4030JR.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent thermal properties and durability, ensuring reliable performance under varying conditions.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into electronic devices and efficient use of space.

Input/Output Type: SEPARATE

Separate input/output design enhances system flexibility and allows for efficient data transfer.

No. of Terminals: 22

Having a sufficient number of terminals enables connectivity with other components in the system.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability in demanding environments.

Organization: 4KX1

The 4KX1 organization provides efficient memory storage capabilities for various applications.

Output Characteristics: 3-STATE

3-STATE output characteristics allow for multiple devices to share the same bus line, enhancing system efficiency.

Technology: MOS

MOS technology offers high-speed performance and low power consumption, making it ideal for memory applications.

Memory Density: 4096 bit

High memory density enables efficient storage and retrieval of data within the device.

Refresh Cycles: 64

Having a low number of refresh cycles ensures continuous data access without interruptions.

Maximum Access Time: 300 ns

Fast maximum access time ensures quick data retrieval, enhancing overall system performance.

Technical Specifications

DRAM TMS4030JR attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-XDIP-T22

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

22

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP22,.4

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

80 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4030JR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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