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TMS4027-15NL

Texas Instruments

TMS4027-15NL by Texas Instruments

TMS4027-15NL by Texas Instruments is a 4Kx1 PAGE MODE DRAM with 4096-bit memory density. It operates at temperatures b/w 0 to 70°C, with a max access time of 150 ns. Suitable for applications requiring high-speed data storage and retrieval in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Halfin

Belgium . 4,481 parts In-Stock

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Vyrian

USA . 3,366 parts In-Stock

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Digiode

USA . 1,701 parts In-Stock

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Holdelec - ElecDif-Pro

France . 43 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 806 parts In-Stock

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$4.000

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806

$4.000

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Parana Technologies

USA . 168 parts In-Stock

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$4.297

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$4.723

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$4.723

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DigiPath Technology Company

USA . 1,953 parts In-Stock

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$4.731

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$4.731

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ChromeModa Solutions

Germany . 4,456 parts In-Stock

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$4.828

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$3.959

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$4.828

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IDEA Electronic Components Group

UK . 764 parts In-Stock

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$4.828

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$4.345

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764

$4.828

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AZTECH Wire

Italy . 384 parts In-Stock

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$7.964

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Corphita

USA . 1,096 parts In-Stock

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Overview

Unlock the power of high-quality memory with the TMS4027-15NL by Texas Instruments. Built by a trusted manufacturer, this DRAM offers unparalleled reliability and performance. Perfect for a wide range of applications, this memory chip provides seamless operation and efficient data storage. Experience the value and benefits of cutting-edge technology with the TMS4027-15NL, delivering speed, precision, and versatility to customers seeking top-tier memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package of the DRAM lightweight and durable, ideal for portable devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement and stacking in devices, saving space.

No. of Terminals: 16

Having 16 terminals provides flexibility in connectivity options and allows for easy integration into different systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM can reliably function in a variety of environments without overheating.

Technology: MOS

The use of MOS technology in this DRAM ensures high performance and efficiency, making it a reliable choice for memory-intensive tasks.

Memory Density: 4096 bit

The high memory density of 4096 bits allows for storing a large amount of data in a compact form, making it suitable for various applications.

Refresh Cycles: 64

With 64 refresh cycles, this DRAM ensures data integrity and reliability, essential for continuous operation without data loss.

Maximum Access Time: 150 ns

The fast maximum access time of 150 nanoseconds ensures quick data retrieval and processing, making this DRAM suitable for high-speed applications.

Technical Specifications

DRAM TMS4027-15NL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

150 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T16

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

1

No. of Terminals:

16

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

DRAMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4027-15NL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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