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TMS4030-1JL

Texas Instruments

TMS4030-1JL by Texas Instruments

TMS4030-1JL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 250 ns access time, and 64 refresh cycles. It operates b/w 0 to 70°C, suitable for commercial applications requiring high-speed data storage in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,908 parts In-Stock

1+ parts

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8,908

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Digiode

USA . 4,858 parts In-Stock

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-

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4,858

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 260 parts In-Stock

1+ parts

$5.020

100+ parts

-

1k+ parts

$5.576

10k+ parts

-

260

$5.020

-

$5.576

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ChromeModa Solutions

Germany . 3,676 parts In-Stock

1+ parts

$5.640

100+ parts

$4.625

1k+ parts

-

10k+ parts

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3,676

$5.640

$4.625

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IDEA Electronic Components Group

UK . 431 parts In-Stock

1+ parts

$5.640

100+ parts

-

1k+ parts

$5.076

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431

$5.640

-

$5.076

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One Stop Electronics

USA . 704 parts In-Stock

1+ parts

$9.000

100+ parts

-

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704

$9.000

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AZTECH Wire

Italy . 200 parts In-Stock

1+ parts

$10.812

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200

$10.812

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Corphita

USA . 819 parts In-Stock

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819

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DigiPath Technology Company

USA . 791 parts In-Stock

1+ parts

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100+ parts

$5.085

1k+ parts

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791

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$5.085

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Overview

Elevate your projects with the TMS4030-1JL by Texas Instruments. Crafted with precision and expertise, this DRAM module offers unparalleled quality and reliability for a wide range of applications. From enhancing performance in computing systems to optimizing data storage capabilities, this product delivers exceptional value and efficiency. Trust in Texas Instruments for cutting-edge technology that exceeds expectations. Elevate your projects with the TMS4030-1JL today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic has good thermal properties, allowing for efficient heat dissipation which can help prolong the lifespan of the DRAM.

No. of Terminals: 22

Having a higher number of terminals allows for more connectivity options and versatility in integrating the DRAM into different systems.

Technology: MOS

MOS technology offers low power consumption and high speed, making this DRAM energy-efficient and fast in data processing.

Memory Density: 4096 bit

With a high memory density, this DRAM can store a large amount of data in a compact form factor, making it suitable for applications requiring high data storage.

Maximum Access Time: 250 ns

The low maximum access time ensures quick retrieval of data from the DRAM, contributing to faster system performance.

Technical Specifications

DRAM TMS4030-1JL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-XDIP-T22

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

22

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP22,.4

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4030-1JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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