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TMS4027-25JL

Texas Instruments

TMS4027-25JL by Texas Instruments

TMS4027-25JL by Texas Instruments is a 4Kx1 PAGE MODE DRAM with 4096-bit memory density and 64 refresh cycles. It operates b/w 0 to 70°C, has a max access time of 250 ns, and features a 3-STATE output characteristic. This IC is commonly used in commercial applications requiring high-speed memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,794 parts In-Stock

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Digiode

USA . 2,966 parts In-Stock

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Halfin

Belgium . 690 parts In-Stock

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690

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ECAB

Sweden . 202 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 717 parts In-Stock

1+ parts

$3.394

100+ parts

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$3.920

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717

$3.394

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$3.920

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DigiPath Technology Company

USA . 209 parts In-Stock

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$3.737

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$3.438

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209

$3.737

$3.438

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ChromeModa Solutions

Germany . 2,827 parts In-Stock

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$3.813

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$3.127

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2,827

$3.813

$3.127

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IDEA Electronic Components Group

UK . 626 parts In-Stock

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$3.813

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$3.432

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626

$3.813

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AZTECH Wire

Italy . 759 parts In-Stock

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$9.651

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759

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One Stop Electronics

USA . 1,086 parts In-Stock

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$16.000

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Corphita

USA . 4,756 parts In-Stock

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Overview

Upgrade your electronics with the TMS4027-25JL by Texas Instruments, a top-quality DRAM that offers exceptional performance and reliability. Manufactured by the trusted brand Texas Instruments, this product is perfect for a wide range of applications across various industries. With its innovative technology and impressive memory density of 4096 bit, this DRAM ensures fast access times and efficient data processing. Invest in the TMS4027-25JL today and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides good thermal conductivity and heat dissipation, making it suitable for efficient operation of the DRAM.

No. of Words: 4096 words

Large number of words allows for storing a significant amount of data, making this DRAM suitable for applications requiring high memory capacity.

Maximum Operating Temperature: 70 °C

Higher maximum operating temperature tolerance ensures reliable performance in various environmental conditions.

Technology: MOS

MOS technology offers fast switching speeds and low power consumption, enhancing the overall performance efficiency of the DRAM.

Refresh Cycles: 64

Lower refresh cycles help in reducing power consumption and improving the overall efficiency of the DRAM.

Maximum Access Time: 250 ns

Fast access time ensures quick retrieval of data, making this DRAM suitable for applications where speed is crucial.

Technical Specifications

DRAM TMS4027-25JL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-XDIP-T16

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

1

No. of Terminals:

16

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

DRAMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4027-25JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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