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TMS4050-1NL

Texas Instruments

TMS4050-1NL by Texas Instruments

TMS4050-1NL by Texas Instruments is a 4KX1 DRAM with 4096-bit memory density. It operates b/w 0 to 70°C, has an access time of 250 ns, and refreshes every 64 cycles. Commonly used in commercial applications due to its MOS technology and open-drain output characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,601 parts In-Stock

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5,601

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Digiode

USA . 4,982 parts In-Stock

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4,982

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 681 parts In-Stock

1+ parts

$2.588

100+ parts

-

1k+ parts

$3.080

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681

$2.588

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$3.080

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DigiPath Technology Company

USA . 145 parts In-Stock

1+ parts

$2.850

100+ parts

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145

$2.850

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ChromeModa Solutions

Germany . 5,856 parts In-Stock

1+ parts

$2.908

100+ parts

$2.385

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5,856

$2.908

$2.385

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IDEA Electronic Components Group

UK . 1,219 parts In-Stock

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$2.908

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$2.617

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1,219

$2.908

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$2.617

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One Stop Electronics

USA . 300 parts In-Stock

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$13.000

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300

$13.000

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AZTECH Wire

Italy . 273 parts In-Stock

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$19.186

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273

$19.186

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Corphita

USA . 3,290 parts In-Stock

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Overview

Experience superior quality and reliability with the TMS4050-1NL by Texas Instruments, a leading manufacturer in the industry. As part of the DRAM category, this product offers unparalleled performance and versatility for various applications. With its innovative design and advanced technology, customers can expect seamless operation and efficient data processing. Trust in Texas Instruments to deliver top-notch products that meet your needs and exceed your expectations. Elevate your projects with the TMS4050-1NL and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the DRAM, making it a reliable choice.

Package Shape: RECTANGULAR

The rectangular shape allows for easy installation and integration into various systems and devices.

Input/Output Type: COMMON

The common input/output type simplifies the interface and connectivity of the DRAM with other components, making it easier to use.

No. of Terminals: 18

With 18 terminals, the DRAM offers sufficient connectivity options for reliable data transfer and communication.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70 °C ensures that the DRAM can withstand a wide range of environmental conditions, making it versatile and suitable for various applications.

Organization: 4KX1

The 4KX1 organization provides a balance between storage capacity and data access speed, making the DRAM efficient and effective for memory storage and retrieval.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics offer flexibility and compatibility with different systems, allowing for easy integration and communication with other components.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures that the DRAM can function reliably in colder environments, making it suitable for a wide range of applications.

Technology: MOS

The MOS technology used in the DRAM provides high performance, low power consumption, and reliability, making it an efficient choice for memory storage and processing.

Refresh Cycles: 64

With 64 refresh cycles, the DRAM ensures data integrity and reliability, making it a dependable choice for memory storage and access.

Maximum Access Time: 250 ns

The maximum access time of 250 ns ensures fast and efficient data retrieval, making the DRAM suitable for high-speed applications where quick access to memory is essential.

Technical Specifications

DRAM TMS4050-1NL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T18

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

18

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4050-1NL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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