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TMS4050-1JL

Texas Instruments

TMS4050-1JL by Texas Instruments

TMS4050-1JL by Texas Instruments is a 4KX1 DRAM with 4096-bit memory density, 250 ns access time, and 64 refresh cycles. It has an operating temperature range of 0 to 70°C and is commonly used in commercial-grade applications requiring fast data access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,251 parts In-Stock

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Digiode

USA . 2,179 parts In-Stock

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2,179

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Electronic Expediters

USA . 21 parts In-Stock

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21

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Distributors (Availability)

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One Stop Electronics

USA . 1,041 parts In-Stock

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$1.000

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1,041

$1.000

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Parana Technologies

USA . 1,901 parts In-Stock

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$2.786

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$3.270

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1,901

$2.786

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$3.270

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DigiPath Technology Company

USA . 62 parts In-Stock

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$3.067

100+ parts

$2.822

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62

$3.067

$2.822

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ChromeModa Solutions

Germany . 6,305 parts In-Stock

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$3.130

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$2.567

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6,305

$3.130

$2.567

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IDEA Electronic Components Group

UK . 1,217 parts In-Stock

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$3.130

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$2.817

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$3.130

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AZTECH Wire

Italy . 339 parts In-Stock

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$14.875

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$14.875

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Corphita

USA . 1,269 parts In-Stock

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Overview

Elevate your electronic projects with the TMS4050-1JL from Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments delivers top-notch quality and reliability. This DRAM module boasts a 4Kx1 organization with 4096 words, perfect for a wide range of applications. With an impressive maximum access time of 250 ns and a low maximum supply current of 60 mA, this product offers exceptional value and performance. Upgrade your designs today with the TMS4050-1JL and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides durability and good thermal conductivity, making it ideal for protecting the sensitive components inside the DRAM.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards and reduces wasted space, optimizing the design layout.

No. of Terminals: 18

Having 18 terminals allows for efficient communication between the DRAM and other components in the system, ensuring smooth data transfer.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this DRAM can withstand demanding conditions without compromising performance.

Organization: 4KX1

The 4KX1 organization allows for efficient data storage and retrieval, enhancing the overall functionality of the DRAM.

Memory Density: 4096 bit

High memory density ensures that a large amount of data can be stored and accessed quickly, making it suitable for applications with high data requirements.

Refresh Cycles: 64

The low refresh cycles of 64 help in maintaining data integrity and stability, ensuring reliable performance over time.

Maximum Access Time: 250 ns

With a fast maximum access time of 250 ns, this DRAM can quickly respond to data requests, improving overall system responsiveness.

Technical Specifications

DRAM TMS4050-1JL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

18

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4050-1JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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