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TMS4050-2JL

Texas Instruments

TMS4050-2JL by Texas Instruments

TMS4050-2JL by Texas Instruments is a 4KX1 DRAM with 4096-bit memory density, 64 refresh cycles, and 200 ns max access time. It is commonly used in applications requiring fast data retrieval and storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,394 parts In-Stock

1+ parts

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3,394

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Digiode

USA . 2,461 parts In-Stock

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2,461

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Electronic Expediters

USA . 7 parts In-Stock

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,200 parts In-Stock

1+ parts

$2.156

100+ parts

-

1k+ parts

$2.667

10k+ parts

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2,200

$2.156

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$2.667

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DigiPath Technology Company

USA . 1,621 parts In-Stock

1+ parts

$2.374

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1,621

$2.374

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ChromeModa Solutions

Germany . 3,499 parts In-Stock

1+ parts

$2.422

100+ parts

$1.986

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3,499

$2.422

$1.986

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IDEA Electronic Components Group

UK . 2,332 parts In-Stock

1+ parts

$2.422

100+ parts

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$2.180

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2,332

$2.422

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$2.180

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AZTECH Wire

Italy . 510 parts In-Stock

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$7.985

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510

$7.985

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One Stop Electronics

USA . 1,053 parts In-Stock

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$14.000

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1,053

$14.000

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Corphita

USA . 4,833 parts In-Stock

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4,833

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Overview

Enhance your electronic designs with the TMS4050-2JL by Texas Instruments, a top-of-the-line DRAM chip that guarantees superior performance and reliability. With Texas Instruments' renowned reputation for quality, this product offers unmatched value to customers seeking high-end memory solutions. Ideal for a wide range of applications, the TMS4050-2JL promises seamless integration and optimal efficiency. Elevate your projects with this innovative component and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal conductivity and durability, making the DRAM reliable in various operating conditions.

Input/Output Type: COMMON

Common input/output type allows for easy integration with other components and systems, simplifying the overall design process.

No. of Terminals: 18

Having 18 terminals provides flexibility in connecting the DRAM to other components, enabling a wide range of applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM can perform reliably even in demanding environments.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics allow for easy interfacing with external devices, enhancing the versatility of the DRAM.

Technology: MOS

MOS technology offers high speed and low power consumption, making the DRAM efficient for memory operations.

Memory Density: 4096 bit

With a memory density of 4096 bits, this DRAM can store a large amount of data, suitable for various computing tasks.

Refresh Cycles: 64

Having 64 refresh cycles ensures data integrity and reliability over extended periods of use, making the DRAM a dependable choice.

Technical Specifications

DRAM TMS4050-2JL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

18

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

70 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4050-2JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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