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TMS4027-20NL

Texas Instruments

TMS4027-20NL by Texas Instruments

TMS4027-20NL by Texas Instruments is a 4Kx1 PAGE MODE DRAM with 4096-bit memory density. It operates b/w 0 to 70°C, with a max access time of 200ns. Suitable for applications requiring high-speed data storage and retrieval in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,838 parts In-Stock

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Digiode

USA . 1,349 parts In-Stock

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1,349

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Electronic Expediters

USA . 523 parts In-Stock

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MISTER SPROCKETS

USA . 63 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,257 parts In-Stock

1+ parts

$4.610

100+ parts

$428.127

1k+ parts

$4.149

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2,257

$4.610

$428.127

$4.149

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DigiPath Technology Company

USA . 1,961 parts In-Stock

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$5.076

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$4.670

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1,961

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$4.670

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ChromeModa Solutions

Germany . 6,247 parts In-Stock

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$5.180

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$4.248

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$5.180

$4.248

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IDEA Electronic Components Group

UK . 516 parts In-Stock

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$5.180

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$4.662

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516

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AZTECH Wire

Italy . 286 parts In-Stock

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$11.640

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One Stop Electronics

USA . 819 parts In-Stock

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$17.000

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819

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Corphita

USA . 4,373 parts In-Stock

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Assy Fe

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Overview

Elevate your electronics with the TMS4027-20NL by Texas Instruments, a top-tier manufacturer known for its quality and reliability. This dynamic DRAM chip offers 4096 words of memory density, making it ideal for a wide range of applications. Boasting a fast maximum access time of 200 ns and 3-state output characteristics, this product delivers unparalleled performance. Upgrade your devices with the TMS4027-20NL and experience the value and benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to heat and corrosion, making the product long-lasting and reliable.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and efficient use of space within electronic devices.

Input/Output Type: SEPARATE

Separate input/output allows for independent control and data transfer, enhancing the overall performance of the product.

No. of Terminals: 16

Having 16 terminals offers versatility in connecting the product to various external components and systems.

Package Style (Meter): IN-LINE

In-line package style provides a compact form factor, ideal for space-constrained applications.

Maximum Operating Temperature: 70 °C

Operating up to 70°C ensures reliability and performance under normal working conditions.

Organization: 4KX1

The 4KX1 organization allows for efficient data storage and retrieval, improving overall speed and functionality of the product.

Output Characteristics: 3-STATE

3-STATE output characteristics enable the product to achieve high-speed data transmission with low power consumption.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, the product can function reliably in a wide range of environments.

Terminal Position: DUAL

Dual terminal position enhances connectivity options, allowing for flexible integration into different electronic systems.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures consistent performance in typical operating conditions found in commercial applications.

Technology: MOS

MOS technology offers high speed and low power consumption, making the product energy-efficient and fast.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connections, enhancing the durability and reliability of the product.

No. of Words: 4096 words

With 4096 words capacity, the product offers ample storage for data and information, suitable for various applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54mm allows for easy soldering and connection, simplifying the assembly process.

No. of Words Code: 4K

The 4K words code signifies the memory capacity of the product, providing clarity on its storage capabilities.

Memory Density: 4096 bit

With a memory density of 4096 bits, the product can store a large amount of data efficiently and effectively.

Memory IC Type: PAGE MODE DRAM

Page mode DRAM technology allows for faster access and retrieval of data, enhancing the overall performance of the product.

Refresh Cycles: 64

Having 64 refresh cycles ensures data integrity and stability, preventing data loss or corruption over time.

Maximum Access Time: 200 ns

With a maximum access time of 200 nanoseconds, the product delivers quick response and access to stored data, improving efficiency.

Technical Specifications

DRAM TMS4027-20NL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T16

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

1

No. of Terminals:

16

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

DRAMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4027-20NL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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