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TMS4050-1JDL

Texas Instruments

TMS4050-1JDL by Texas Instruments

TMS4050-1JDL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density. It features an open-drain output, 64 refresh cycles, and max access time of 250ns. Ideal for applications requiring common I/O type and operating temperature range of 0-70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,026 parts In-Stock

1+ parts

-

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6,026

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Digiode

USA . 4,790 parts In-Stock

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4,790

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 503 parts In-Stock

1+ parts

$4.318

100+ parts

-

1k+ parts

$4.740

10k+ parts

-

503

$4.318

-

$4.740

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DigiPath Technology Company

USA . 909 parts In-Stock

1+ parts

$4.755

100+ parts

$4.375

1k+ parts

-

10k+ parts

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909

$4.755

$4.375

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ChromeModa Solutions

Germany . 2,623 parts In-Stock

1+ parts

$4.852

100+ parts

$3.979

1k+ parts

-

10k+ parts

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2,623

$4.852

$3.979

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IDEA Electronic Components Group

UK . 2,124 parts In-Stock

1+ parts

$4.852

100+ parts

-

1k+ parts

$4.367

10k+ parts

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2,124

$4.852

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$4.367

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AZTECH Wire

Italy . 592 parts In-Stock

1+ parts

$7.971

100+ parts

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592

$7.971

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One Stop Electronics

USA . 1,595 parts In-Stock

1+ parts

$12.000

100+ parts

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1,595

$12.000

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Corphita

USA . 3,792 parts In-Stock

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3,792

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Overview

Unlock the power of advanced memory technology with the TMS4050-1JDL by Texas Instruments. Designed with precision and quality in mind, this DRAM module is perfect for a wide range of applications. From data storage to computing, this product offers unmatched performance and reliability. With its innovative design and superior craftsmanship, Texas Instruments sets the standard in the industry. Experience seamless functionality and enhanced productivity with the TMS4050-1JDL. Choose excellence, choose Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide excellent protection for components and are known for their durability and reliability, making this product suitable for applications requiring long-term performance.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into various electronic devices and systems, providing flexibility in design and layout.

Input/Output Type: COMMON

Common input/output type simplifies the interface with other components and systems, ensuring compatibility and ease of integration.

No. of Terminals: 18

Having 18 terminals provides sufficient connectivity options for interfacing with other components and devices, allowing for versatile applications.

Package Style (Meter): IN-LINE

The in-line package style is space-efficient and conducive to high-density mounting, making it suitable for compact electronic designs.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand moderate heat levels, ensuring reliable performance in various operating conditions.

Organization: 4KX1

The organization of 4KX1 indicates a high memory capacity of 4K words, allowing for storing and processing large amounts of data efficiently.

Output Characteristics: OPEN-DRAIN

Open-drain output characteristics facilitate easy interfacing with other components and systems, providing flexibility in signal routing and communication.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures reliable performance even in colder environments, making this product suitable for a wide range of applications.

Terminal Position: DUAL

Dual terminal position allows for secure and stable connections, reducing the risk of signal loss or interference, enhancing the product's overall reliability.

Temperature Grade: COMMERCIAL

Being a commercial-grade product means it meets industry standards for performance and reliability, making it a dependable choice for various commercial applications.

Technology: MOS

MOS technology offers low power consumption and high-speed operation, making this product energy-efficient and suitable for applications requiring fast data processing.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and stable connections, ensuring reliable performance in demanding environments and applications.

No. of Words: 4096 words

With a memory capacity of 4096 words, this product can store and process a large amount of data, making it suitable for data-intensive applications.

Terminal Pitch: 2.54 mm

Terminal pitch of 2.54 mm allows for easy soldering and mounting, providing convenience in assembly and maintenance of electronic systems.

No. of Words Code: 4K

The 4K words code indicates a high memory density of 4096 bits, enabling efficient data storage and retrieval, enhancing the product's value for memory-intensive applications.

Refresh Cycles: 64

A refresh cycle of 64 ensures data integrity and reliability by refreshing stored data periodically, making this product suitable for long-term usage without data loss.

Maximum Access Time: 250 ns

With a maximum access time of 250 ns, this product offers fast data retrieval and processing, ensuring high performance in time-sensitive applications.

Technical Specifications

DRAM TMS4050-1JDL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

250 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-XDIP-T18

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

18

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP18,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4050-1JDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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