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TMS4027-20JL

Texas Instruments

TMS4027-20JL by Texas Instruments

TMS4027-20JL by Texas Instruments is a 4Kx1 PAGE MODE DRAM with 4096-bit memory density. It features 3-STATE output characteristics, operates b/w 0°C to 70°C, and has a max access time of 200ns. This IC is commonly used in applications requiring high-speed data storage and retrieval in commercial-grade environments.

Median Price

$5.570

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 24 parts In-Stock

1+ parts

$5.570

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24

$5.570

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Vyrian

USA . 5,338 parts In-Stock

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5,338

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Digiode

USA . 1,309 parts In-Stock

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1,309

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Electronic Expediters

USA . 24 parts In-Stock

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24

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,426 parts In-Stock

1+ parts

$5.238

100+ parts

-

1k+ parts

$5.855

10k+ parts

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1,426

$5.238

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$5.855

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DigiPath Technology Company

USA . 1,438 parts In-Stock

1+ parts

$5.767

100+ parts

$5.306

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-

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1,438

$5.767

$5.306

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ChromeModa Solutions

Germany . 5,558 parts In-Stock

1+ parts

$5.885

100+ parts

$4.826

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5,558

$5.885

$4.826

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IDEA Electronic Components Group

UK . 9 parts In-Stock

1+ parts

$5.885

100+ parts

-

1k+ parts

$5.296

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9

$5.885

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$5.296

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AZTECH Wire

Italy . 323 parts In-Stock

1+ parts

$10.417

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323

$10.417

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One Stop Electronics

USA . 291 parts In-Stock

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$29.000

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291

$29.000

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Corphita

USA . 1,455 parts In-Stock

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1,455

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A-Plus Industry Inc.

USA . 13 parts In-Stock

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Overview

Unlock the power of efficient data storage with the TMS4027-20JL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality DRAM products like this one that are perfect for a wide range of applications. With its 4Kx1 organization and 3-STATE output characteristics, this memory IC offers reliable performance and seamless integration into your projects. Experience the value and benefits of Texas Instruments' innovative technology with the TMS4027-20JL.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer high thermal conductivity and excellent mechanical strength, making them ideal for products that require durability and efficient heat dissipation.

Input/Output Type: SEPARATE

Separate input/output type allows for independent control over data transfer, improving the overall efficiency and performance of the DRAM.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this DRAM can withstand high temperatures without compromising its performance, ensuring reliable operation even under demanding conditions.

Organization: 4KX1

The 4KX1 organization provides a high density memory solution, maximizing storage capacity in a compact form factor.

Output Characteristics: 3-STATE

3-state output allows for efficient data transmission and signal control, enabling versatile functionality in various applications.

Technology: MOS

MOS technology offers high speed and low power consumption, making this DRAM suitable for energy-efficient devices that require fast data processing.

Memory Density: 4096 bit

The memory density of 4096 bit ensures ample storage capacity for data-intensive applications, making this DRAM an optimal choice for high-performance computing.

Refresh Cycles: 64

With a refresh cycle of 64, the DRAM maintains data integrity and reliability over time, ensuring consistent performance in long-term usage.

Maximum Access Time: 200 ns

The maximum access time of 200 nanoseconds ensures quick data retrieval and processing, enhancing the overall speed and performance of the DRAM.

Technical Specifications

DRAM TMS4027-20JL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-XDIP-T16

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

1

No. of Terminals:

16

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

DRAMs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4027-20JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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