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TMS4030-2NL

Texas Instruments

TMS4030-2NL by Texas Instruments

TMS4030-2NL by Texas Instruments is a 4KX1 DRAM with 4096-bit memory density. It operates at temperatures from 0 to 70°C, featuring 3-STATE output characteristics. Suitable for applications requiring high-speed data storage in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,864 parts In-Stock

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3,864

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Digiode

USA . 632 parts In-Stock

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632

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Distributors (Availability)

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Parana Technologies

USA . 870 parts In-Stock

1+ parts

$1.854

100+ parts

-

1k+ parts

$2.401

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870

$1.854

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$2.401

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DigiPath Technology Company

USA . 1,463 parts In-Stock

1+ parts

$2.041

100+ parts

$1.878

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1,463

$2.041

$1.878

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ChromeModa Solutions

Germany . 2,914 parts In-Stock

1+ parts

$2.083

100+ parts

$1.708

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2,914

$2.083

$1.708

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IDEA Electronic Components Group

UK . 1,582 parts In-Stock

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$2.083

100+ parts

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$1.875

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1,582

$2.083

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$1.875

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One Stop Electronics

USA . 206 parts In-Stock

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$3.000

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206

$3.000

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AZTECH Wire

Italy . 763 parts In-Stock

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$7.909

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763

$7.909

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Corphita

USA . 3,482 parts In-Stock

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3,482

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Overview

Upgrade your systems with the TMS4030-2NL by Texas Instruments, a high-quality DRAM that offers superior performance and reliability. With Texas Instrument's reputation for excellence in manufacturing, this product is guaranteed to meet your needs. Ideal for a wide range of applications, this DRAM provides seamless integration and improved efficiency. Experience the value and benefits of this innovative product, delivering exceptional results for your projects. Choose Texas Instruments for top-of-the-line technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, perfect for portable devices.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various electronic devices without taking up too much space.

Input/Output Type: SEPARATE

The separate input/output type ensures efficient data transfer and processing, improving overall performance.

No. of Terminals: 22

With 22 terminals, the product offers multiple connection options for versatile usage in different applications.

Package Style (Meter): IN-LINE

The in-line package style simplifies installation and maintenance, making it user-friendly.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures stable performance even in challenging environmental conditions.

Organization: 4KX1

The 4KX1 organization provides a balance between memory capacity and data access speed, making it suitable for various tasks.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for efficient data output control, enhancing system flexibility.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures reliable performance even in colder environments.

Terminal Position: DUAL

The dual terminal position offers redundancy and versatility in connectivity options, ensuring reliable data transmission.

Temperature Grade: COMMERCIAL

The commercial temperature grade guarantees consistent performance in standard operating conditions.

Technology: MOS

The MOS technology used in the product provides high speed and low power consumption, suitable for modern electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers secure and stable connections, ideal for applications requiring ruggedness.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, the product consumes low power, prolonging battery life in portable devices.

No. of Words: 4096 words

The 4096 words capacity allows for ample storage of data, suitable for memory-intensive applications.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch enables easy connections and compatibility with standard sockets, ensuring ease of use.

No. of Words Code: 4K

The 4K words code simplifies memory identification and management, aiding ease of integration into systems.

Memory Density: 4096 bit

With a memory density of 4096 bits, the product offers high storage capacity in a compact form factor.

Refresh Cycles: 64

The 64 refresh cycles ensure data integrity and reliability, vital for maintaining optimal performance over time.

Maximum Access Time: 200 ns

With a maximum access time of 200 ns, the product delivers fast data retrieval speed, enhancing overall system efficiency.

Technical Specifications

DRAM TMS4030-2NL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T22

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

22

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP22,.4

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4030-2NL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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