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TMS4030JL

Texas Instruments

TMS4030JL by Texas Instruments

TMS4030JL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 300ns max access time, and 64 refresh cycles. It has separate I/O type and operates in commercial temperature range. Ideal for applications requiring low-power memory solutions in industrial electronics.

Median Price

$49.260

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 109 parts In-Stock

1+ parts

$49.260

100+ parts

$46.300

1k+ parts

$43.350

10k+ parts

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109

$49.260

$46.300

$43.350

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DigiKey

USA . 109 parts In-Stock

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109

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Digiode

USA . 1,757 parts In-Stock

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$49.524

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1,757

$49.524

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Vyrian

USA . 3,157 parts In-Stock

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Electronic Expediters

USA . 992 parts In-Stock

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Standard Data Resources

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500

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Q Components

USA . 225 parts In-Stock

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DigiKey Marketplace

USA . 109 parts In-Stock

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MISTER SPROCKETS

USA . 67 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 50 parts In-Stock

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50

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Ace Electronics

USA . 30 parts In-Stock

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MRC Electronics

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Holdelec - ElecDif-Pro

France . 11 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 658 parts In-Stock

1+ parts

$4.655

100+ parts

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$5.133

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658

$4.655

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$5.133

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DigiPath Technology Company

USA . 314 parts In-Stock

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$5.125

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314

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IDEA Electronic Components Group

UK . 2,097 parts In-Stock

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$5.230

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$4.707

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2,097

$5.230

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ChromeModa Solutions

Germany . 2,090 parts In-Stock

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$5.230

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$4.289

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2,090

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Corphita

USA . 225 parts In-Stock

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$46.917

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Kepictronics

USA . 300 parts In-Stock

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300

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Overview

Upgrade your devices with the cutting-edge TMS4030JL DRAM by Texas Instruments. Known for their superior quality and innovation, Texas Instruments delivers top-of-the-line products that exceed industry standards. This versatile DRAM is perfect for a wide range of applications, offering fast access times and low power consumption. Experience seamless performance and reliability with the TMS4030JL, setting new standards in memory technology. Elevate your projects with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent durability and heat dissipation, ensuring a reliable performance under various operating conditions.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and installation in different electronic devices and systems.

Input/Output Type: SEPARATE

Separate input/output design enables efficient data transfer and processing, enhancing overall system performance.

No. of Terminals: 22

Higher number of terminals allows for more connectivity options and flexibility in circuit design.

Package Style (Meter): IN-LINE

In-line package style simplifies PCB layout and assembly, making it suitable for compact electronic designs.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this DRAM can withstand demanding conditions and high-performance applications.

Organization: 4KX1

The organization of 4KX1 offers a good balance between capacity and speed, making it suitable for a wide range of memory-intensive tasks.

Output Characteristics: 3-STATE

3-state output allows for efficient sharing of data among multiple devices and reduces power consumption when not in use.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold environments.

Terminal Position: DUAL

Dual terminal position provides redundancy and enhanced connectivity for improved system reliability.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures compatibility with a wide range of consumer electronics and industrial applications.

Technology: MOS

MOS technology offers high-speed operation, low power consumption, and small size, making it ideal for modern electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connection and ease of soldering during PCB assembly.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, this DRAM operates efficiently without drawing excessive power.

No. of Words: 4096 words

Large memory capacity of 4096 words allows for storing and accessing a significant amount of data.

Terminal Pitch: 2.54 mm

Standard terminal pitch of 2.54 mm enables easy integration into existing circuit designs and layouts.

No. of Words Code: 4K

The 4K words code represents a high memory density suitable for multitasking and data-intensive applications.

Memory Density: 4096 bit

High memory density of 4096 bits enables efficient data storage and retrieval for complex computing tasks.

Refresh Cycles: 64

With 64 refresh cycles, this DRAM maintains data integrity over extended periods of operation.

Maximum Access Time: 300 ns

Fast maximum access time of 300 nanoseconds ensures quick data retrieval and processing for responsive system performance.

Technical Specifications

DRAM TMS4030JL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-XDIP-T22

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

22

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP22,.4

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4030JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

NSN

5962-01-048-5199, 5962010485199

NIIN

010485199

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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