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TMS4030NL

Texas Instruments

TMS4030NL by Texas Instruments

TMS4030NL by Texas Instruments is a 4KX1 DRAM with 4096-bit memory density, 300 ns access time, and 64 refresh cycles. It has separate I/O type and operates b/w 0-70°C. Ideal for applications requiring low-power consumption and high-speed data storage in commercial-grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,243 parts In-Stock

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5,243

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Digiode

USA . 2,034 parts In-Stock

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2,034

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 102 parts In-Stock

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102

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ECAB

Sweden . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,698 parts In-Stock

1+ parts

$2.016

100+ parts

-

1k+ parts

$2.539

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1,698

$2.016

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$2.539

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DigiPath Technology Company

USA . 1,257 parts In-Stock

1+ parts

$2.220

100+ parts

$2.042

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1,257

$2.220

$2.042

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ChromeModa Solutions

Germany . 3,556 parts In-Stock

1+ parts

$2.265

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$1.857

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3,556

$2.265

$1.857

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IDEA Electronic Components Group

UK . 2,187 parts In-Stock

1+ parts

$2.265

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$2.038

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2,187

$2.265

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$2.038

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AZTECH Wire

Italy . 864 parts In-Stock

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$6.631

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864

$6.631

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One Stop Electronics

USA . 1,185 parts In-Stock

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$25.000

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$25.000

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Corphita

USA . 4,801 parts In-Stock

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4,801

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Overview

Unlock the power of high-quality memory solutions with the TMS4030NL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge DRAM technology that guarantees reliability and performance. Whether you're working on data storage systems, industrial applications, or consumer electronics, the TMS4030NL provides seamless operation and optimal efficiency. Experience the value and benefits of this product with its 3-state output characteristics, commercial-grade temperature tolerance, and 4096-bit memory density. Upgrade your projects with Texas Instruments and elevate your results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability, making this product suitable for long-term use.

No. of Terminals: 22

Having 22 terminals allows for efficient connectivity and integration with other components in a system.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this product can withstand high temperatures without performance degradation.

Organization: 4KX1

The 4KX1 organization offers high memory density and efficient storage capacity.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow for flexible data output options, enhancing versatility in data processing.

Technology: MOS

MOS technology provides low power consumption and high speed performance, making this product energy-efficient and fast.

Maximum Supply Current: 60 mA

With a maximum supply current of 60 mA, this product operates efficiently without drawing excessive power.

Memory Density: 4096 bit

High memory density of 4096 bits ensures ample storage capacity for data processing and retrieval.

Refresh Cycles: 64

64 refresh cycles allow for reliable and stable data storage, ensuring data integrity over extended periods of time.

Maximum Access Time: 300 ns

With a maximum access time of 300 nanoseconds, this product offers fast and efficient data retrieval, enhancing system performance.

Technical Specifications

DRAM TMS4030NL attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T22

Memory Density:

4096 bit

Memory Width:

1

No. of Terminals:

22

No. of Words:

4096 words

No. of Words Code:

4K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4KX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP22,.4

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Refresh Cycles:

64

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4030NL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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