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DRA750BJGABCQ1

Texas Instruments

DRA750BJGABCQ1 by Texas Instruments

DRA750BJGABCQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 760 terminals in a GRID ARRAY, FINE PITCH package. It operates b/w -40 to 125 °C and has a supply voltage range of 1.11V to 1.2V, making it ideal for AUTOMOTIVE applications requiring high performance and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,531 parts In-Stock

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8,531

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Digiode

USA . 2,040 parts In-Stock

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2,040

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 844 parts In-Stock

1+ parts

$0.447

100+ parts

-

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10k+ parts

$0.429

844

$0.447

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$0.429

Northwest PG Solutions

USA . 93 parts In-Stock

1+ parts

$0.492

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-

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$0.434

93

$0.492

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$0.434

AZTECH Wire

Italy . 544 parts In-Stock

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$9.560

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544

$9.560

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One Stop Electronics

USA . 546 parts In-Stock

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$21.000

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546

$21.000

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Corohmni

South Africa . 371 parts In-Stock

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$53.355

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371

$53.355

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Parana Technologies

USA . 1,426 parts In-Stock

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$59.456

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1,426

$59.456

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DigiPath Technology Company

USA . 1,887 parts In-Stock

1+ parts

$65.469

100+ parts

$60.231

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1,887

$65.469

$60.231

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IDEA Electronic Components Group

UK . 2,206 parts In-Stock

1+ parts

$66.805

100+ parts

$63.465

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$60.124

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2,206

$66.805

$63.465

$60.124

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ChromeModa Solutions

Germany . 972 parts In-Stock

1+ parts

$66.805

100+ parts

$54.780

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972

$66.805

$54.780

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Corphita

USA . 3,836 parts In-Stock

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Overview

Unleash the power of innovation with the DRA750BJGABCQ1 by Texas Instruments! This cutting-edge microprocessor circuit offers unparalleled reliability and performance, thanks to the high-quality materials and advanced technology used in its design. Whether you're working on automotive applications or other functions requiring precision and efficiency, this product delivers exceptional value and benefits. Say goodbye to limitations and hello to endless possibilities with the DRA750BJGABCQ1 - your ultimate solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides a cost-effective and lightweight packaging solution, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, saving time and effort during manufacturing.

Maximum Supply Voltage: 1.2 V

Operates at a maximum supply voltage of 1.2 V, ensuring compatibility with a wide range of power sources.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high reliability and performance standards, making this product suitable for automotive applications.

Package Shape: SQUARE

Square package shape allows for efficient use of space on the PCB, optimizing the overall design.

No. of Terminals: 760

With 760 terminals, this product provides a high level of connectivity options for various functions and peripherals.

Package Style (Meter): GRID ARRAY, FINE PITCH

Grid array with fine pitch packaging style allows for high density integration and improved signal integrity.

Minimum Supply Voltage: 1.11 V

Can operate at a minimum supply voltage of 1.11 V, providing flexibility in power management and efficiency.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high temperature environments, ensuring reliable performance.

Minimum Operating Temperature: -40 °C

Can operate at a minimum temperature of -40°C, making it suitable for a wide range of operating conditions.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and allows for easier routing of traces, improving overall design efficiency.

Maximum Seated Height: 2.96 mm

Low seated height of 2.96 mm enables the product to be used in space-constrained applications while maintaining a compact form factor.

Width: 23 mm

With a width of 23 mm, this product offers a balance between space efficiency and connectivity options, suitable for various applications.

Length: 23 mm

With a length of 23 mm, this product provides a compact form factor without compromising on functionality or performance.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this product meets stringent temperature and reliability requirements for in-vehicle use.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Integrated with a microprocessor circuit, this product offers advanced processing capabilities and functionality for diverse applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption, high speed operation, and compatibility with a wide range of digital systems.

Terminal Form: BALL

Ball terminal form provides reliable electrical connections and allows for easy soldering during assembly, ensuring robust performance.

Nominal Supply Voltage: 1.15 V

Operates at a nominal supply voltage of 1.15 V, offering a balance between power efficiency and performance for optimal functionality.

Terminal Pitch: 0.8 mm

With a terminal pitch of 0.8 mm, this product enables high-density packaging and efficient signal routing, enhancing overall system performance.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA750BJGABCQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B760

Length:

23 mm

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA750BJGABCQ1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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