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DRA755BLGABCQ1

Texas Instruments

DRA755BLGABCQ1 by Texas Instruments

The Texas Instruments DRA755BLGABCQ1 is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -40 to 125 °C and has a supply voltage range of 1.11V to 1.2V, making it ideal for AUTOMOTIVE applications requiring high performance in a compact GRID ARRAY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,779 parts In-Stock

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Digiode

USA . 420 parts In-Stock

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420

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Native Components

USA . 603 parts In-Stock

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$0.991

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603

$0.991

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Northwest PG Solutions

USA . 145 parts In-Stock

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$1.090

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145

$1.090

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AZTECH Wire

Italy . 639 parts In-Stock

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$7.000

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One Stop Electronics

USA . 166 parts In-Stock

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$16.000

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Corohmni

South Africa . 1,089 parts In-Stock

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$34.852

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Parana Technologies

USA . 786 parts In-Stock

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$54.182

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786

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DigiPath Technology Company

USA . 1,859 parts In-Stock

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$59.661

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$54.889

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ChromeModa Solutions

Germany . 2,191 parts In-Stock

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$60.879

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$49.921

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IDEA Electronic Components Group

UK . 1,405 parts In-Stock

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$60.879

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$57.835

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$54.791

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1,405

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Corphita

USA . 689 parts In-Stock

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Overview

Enhance your automotive electronics with the DRA755BLGABCQ1 by Texas Instruments, a top-tier manufacturer known for quality and reliability. This versatile microprocessor circuit offers seamless integration into various applications, ensuring optimal performance in any setting. With advanced technology and a wide temperature range, this product provides unmatched value and benefits to customers seeking high-quality solutions for their automotive needs. Experience the advantages of Texas Instruments with the DRA755BLGABCQ1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are known for their durability and resistance to heat, making this product suitable for automotive applications where it may be subjected to harsh environments.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on printed circuit boards, saving time and space in the manufacturing process.

Maximum Supply Voltage: 1.2 V

With a maximum supply voltage of 1.2V, this product is efficient in power consumption and can potentially extend the battery life in automotive applications.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the product has passed rigorous automotive industry standards for reliability, making it a trusted choice for automotive applications.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the PCB, making it easier to integrate into compact automotive electronic systems.

No. of Terminals: 760

Having a high number of terminals allows for more connections and functionality, making this product versatile and suitable for complex automotive systems.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array and fine pitch package style enables high-density packaging, important for miniaturization of automotive electronic systems.

Minimum Supply Voltage: 1.11 V

The low minimum supply voltage of 1.11V ensures operational efficiency and compatibility with various power sources in automotive applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high temperatures common in automotive environments without compromising performance.

Minimum Operating Temperature: -40 °C

The ability to operate in temperatures as low as -40°C ensures reliability and functionality in extreme cold weather conditions that may be experienced in automotive applications.

Terminal Position: BOTTOM

Bottom terminal position allows for efficient heat dissipation and connectivity in automotive systems, contributing to overall performance and reliability.

Maximum Seated Height: 2.96 mm

The low maximum seated height of 2.96mm enables a slim profile for space-constrained automotive applications while still providing high functionality.

Width: 23 mm

The compact width of 23mm allows for easy integration into automotive electronic systems, contributing to efficient design and installation.

Length: 23 mm

With a length of 23mm, this product offers a square form factor that facilitates uniform layout and space optimization in automotive PCB designs.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this product meets industry standards for temperature range, reliability, and performance, ensuring suitability for harsh automotive environments.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Incorporating a microprocessor circuit, this product offers advanced processing capabilities and functionality, making it ideal for sophisticated automotive electronic systems.

Technology: CMOS

CMOS technology delivers low power consumption and high speed performance, making this product energy-efficient and suitable for automotive applications that prioritize efficiency.

Terminal Form: BALL

With a ball terminal form, this product ensures secure connections and reliable contact, crucial for robust performance in automotive electronic systems.

Nominal Supply Voltage: 1.15 V

The nominal supply voltage of 1.15V is ideal for stable and efficient operation in automotive applications, ensuring consistent performance and compatibility.

Terminal Pitch: 0.8 mm

The fine terminal pitch of 0.8mm allows for high-density packaging and precise connections, important for accommodating complex circuitry in automotive systems.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA755BLGABCQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B760

Length:

23 mm

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA755BLGABCQ1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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