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DRA750BJGABCRQ1

Texas Instruments

DRA750BJGABCRQ1 by Texas Instruments

DRA750BJGABCRQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 48-bit External Data Bus Width, operating at 32 MHz. Designed for AUTOMOTIVE applications, it features a max supply voltage of 1.2 V and can withstand temperatures from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,885 parts In-Stock

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Digiode

USA . 4,481 parts In-Stock

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AZTECH Wire

Italy . 842 parts In-Stock

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$10.257

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One Stop Electronics

USA . 1,102 parts In-Stock

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$24.000

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Parana Technologies

USA . 209 parts In-Stock

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$31.889

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$91.129

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ChromeModa Solutions

Germany . 2,317 parts In-Stock

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$35.830

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$29.381

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IDEA Electronic Components Group

UK . 2,123 parts In-Stock

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$35.830

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$34.038

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$32.247

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Corohmni

South Africa . 70 parts In-Stock

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Corphita

USA . 2,169 parts In-Stock

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Microchip USA

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DigiPath Technology Company

USA . 1,145 parts In-Stock

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Northwest PG Solutions

USA . 891 parts In-Stock

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Native Components

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Overview

Discover the cutting-edge DRA750BJGABCRQ1 by Texas Instruments, a premium-quality MICROPROCESSOR CIRCUIT designed for automotive applications. With a robust package body material and advanced CMOS technology, this device offers unparalleled performance and reliability. Boasting a wide range of bus compatibility, including CAN, I2C, PCI, SPI, UART, and USB, this peripheral IC is versatile and adaptable to various systems. Trust in Texas Instruments, a reputable manufacturer known for innovation and excellence, and unlock the full potential of your automotive electronics with the DRA750BJGABCRQ1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and resistance to environmental factors, making the product suitable for automotive applications.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving time and effort during manufacturing.

Maximum Supply Voltage: 1.2 V

Optimal voltage level for efficient functionality and power consumption.

Screening Level: AEC-Q100

Ensures high reliability and performance standards suitable for automotive applications.

Package Shape: SQUARE

Compact shape that saves space on the circuit board and allows for efficient layout designs.

No. of Terminals: 760

Provides a wide range of connectivity options for various peripherals and external devices.

Package Style (Meter): GRID ARRAY, FINE PITCH

Enhances the electrical performance and signal integrity of the product.

Minimum Supply Voltage: 1.11 V

Ensures stable operation and performance even at lower voltage levels.

Maximum Operating Temperature: 125 °C

Suitable for automotive applications where high temperatures may be encountered.

Minimum Operating Temperature: -40 °C

Ensures reliable operation even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Facilitates easy and secure connection to the circuit board.

Maximum Seated Height: 2.96 mm

Low profile design saves space and allows for compact electronic devices.

Width: 23 mm

Compact size suitable for various applications with limited space constraints.

External Data Bus Width: 48

Provides high-speed data transfer capability for efficient performance.

Maximum Clock Frequency: 32 MHz

Allows for fast processing speeds and responsiveness in handling multiple tasks.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and joint reliability during manufacturing processes.

Peak Reflow Temperature °C: 250

Compatible with standard reflow soldering processes for easy manufacturing.

Length: 23 mm

Compact size suitable for various applications with limited space constraints.

Temperature Grade: AUTOMOTIVE

Meets stringent automotive industry standards for reliability and performance.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Designed for handling complex computing tasks and interfacing with external devices.

Technology: CMOS

Low power consumption and high noise immunity for efficient operation.

Terminal Form: BALL

Facilitates easy and reliable connection during assembly onto the circuit board.

Nominal Supply Voltage: 1.15 V

Optimal voltage level for efficient functionality and power consumption.

Bus Compatibility: CAN; I2C; PCI; SPI; UART; USB

Versatile connectivity options for interfacing with a wide range of peripherals and devices.

Terminal Pitch: 0.8 mm

Optimal spacing for secure connections and efficient signal transmission.

Moisture Sensitivity Level (MSL): 3

Designed to handle moderate exposure to moisture during operation and storage.

Speed: 1000 rpm

Suitable for high-speed data processing and computing tasks.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA750BJGABCRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; PCI; SPI; UART; USB

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

48

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Speed:

1000 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA750BJGABCRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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