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DRA744BJGABCQ1

Texas Instruments

DRA744BJGABCQ1 by Texas Instruments

DRA744BJGABCQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 64-bit External Data Bus Width and 32 MHz Max Clock Frequency. Ideal for AUTOMOTIVE applications, it features a PLASTIC/EPOXY Package Body Material and operates b/w -40 to 125 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,872 parts In-Stock

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Digiode

USA . 4,025 parts In-Stock

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AZTECH Wire

Italy . 519 parts In-Stock

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$10.126

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One Stop Electronics

USA . 213 parts In-Stock

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$28.000

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Parana Technologies

USA . 908 parts In-Stock

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$63.986

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ChromeModa Solutions

Germany . 1,480 parts In-Stock

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$71.894

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$58.953

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IDEA Electronic Components Group

UK . 688 parts In-Stock

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$71.894

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$68.299

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$64.705

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688

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Corohmni

South Africa . 2,163 parts In-Stock

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$73.215

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Corphita

USA . 2,635 parts In-Stock

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Microchip USA

USA . 2,549 parts In-Stock

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DigiPath Technology Company

USA . 1,644 parts In-Stock

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Northwest PG Solutions

USA . 365 parts In-Stock

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Native Components

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Overview

Discover the power and reliability of the DRA744BJGABCQ1 by Texas Instruments, a cutting-edge microprocessor circuit designed for automotive applications. With top-notch quality and advanced technology, this device offers unparalleled performance and efficiency. From CAN to USB compatibility, this versatile product is perfect for a wide range of functions. Trust Texas Instruments, a leader in semiconductor manufacturing, to deliver the best solutions for your needs. Experience the value and benefits of the DRA744BJGABCQ1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for automotive applications where weight and durability are important factors.

Surface Mount: YES

Surface mount technology allows for easy installation and compact design, saving space on the PCB.

Maximum Supply Voltage: 1.2 V

Low maximum supply voltage helps in reducing power consumption and heat generation, making the product energy-efficient.

Screening Level: AEC-Q100

Compliance with AEC-Q100 standards ensures high reliability and quality of the product, making it suitable for automotive applications.

Package Shape: SQUARE

Square package shape allows for efficient use of space on the PCB and facilitates easier routing of traces.

Width: 23 mm

Compact width of the product allows for flexibility in design and integration into various electronic systems.

Maximum Clock Frequency: 32 MHz

High maximum clock frequency enables fast processing speeds, making the product suitable for applications requiring real-time processing.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides excellent conductivity, corrosion resistance, and solderability, ensuring reliable electrical connections.

External Data Bus Width: 64

Wide external data bus width allows for efficient data transfer and processing, enhancing the performance of the product.

Moisture Sensitivity Level (MSL): 3

MSL 3 rating indicates that the product has moderate sensitivity to moisture, making it suitable for automotive applications with varying environmental conditions.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA744BJGABCQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; PCI; SPI; UART; USB

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

64

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Speed:

1000 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA744BJGABCQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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