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DRA751BLGABCQ

Texas Instruments

DRA751BLGABCQ by Texas Instruments

DRA751BLGABCQ by Texas Instruments is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -40 to 125 °C and has a supply voltage range of 1.11V to 1.2V, making it ideal for AUTOMOTIVE applications requiring high performance in a compact GRID ARRAY package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,265 parts In-Stock

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Digiode

USA . 830 parts In-Stock

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Corohmni

South Africa . 1,946 parts In-Stock

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$15.894

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AZTECH Wire

Italy . 607 parts In-Stock

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$16.044

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One Stop Electronics

USA . 759 parts In-Stock

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$23.000

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Parana Technologies

USA . 1,103 parts In-Stock

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$23.818

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$24.453

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ChromeModa Solutions

Germany . 6,107 parts In-Stock

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$26.762

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$21.945

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IDEA Electronic Components Group

UK . 1,569 parts In-Stock

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$26.762

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$25.424

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$24.086

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Corphita

USA . 1,402 parts In-Stock

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Native Components

USA . 507 parts In-Stock

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Northwest PG Solutions

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DigiPath Technology Company

USA . 143 parts In-Stock

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$24.129

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Overview

Elevate your automotive electronics with the cutting-edge DRA751BLGABCQ by Texas Instruments. Crafted with precision and expertise, this MICROPROCESSOR CIRCUIT offers unparalleled performance and reliability in a compact GRID ARRAY, FINE PITCH package. Ideal for a wide range of applications, this innovative technology operates seamlessly at extreme temperatures while delivering exceptional power efficiency. Upgrade your next project with the ultimate solution in uPs,uCs & Peripheral ICs, and experience the unbeatable quality and value that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for automotive applications where harsh conditions may be encountered.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying the overall design.

Maximum Supply Voltage: 1.2 V

Can operate efficiently within a voltage range commonly found in automotive electronics, ensuring compatibility with existing systems.

Screening Level: AEC-Q100

Complies with automotive quality standards, guaranteeing reliability and performance in automotive environments.

Package Shape: SQUARE

The square shape allows for compact placement on circuit boards, optimizing space utilization and facilitating efficient routing of connections.

No. of Terminals: 760

Having a high number of terminals enables the product to support complex functionalities, making it suitable for advanced automotive applications.

Package Style (Meter): GRID ARRAY, FINE PITCH

The fine pitch grid array package style enhances signal integrity and reliability, crucial for high-performance automotive electronics.

Minimum Supply Voltage: 1.11 V

The low minimum supply voltage allows for efficient power consumption, contributing to energy efficiency in automotive systems.

Maximum Operating Temperature: 125 °C

Capable of withstanding high operating temperatures commonly encountered in automotive environments, ensuring reliable performance under stress.

Minimum Operating Temperature: -40 °C

With a wide temperature range, the product remains operational even in extreme cold conditions, ideal for automotive applications in various climates.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection to the circuit board, simplifying the assembly process.

Maximum Seated Height: 2.96 mm

Low seated height allows for a slim profile, making it suitable for compact automotive designs where space is limited.

Width: 23 mm

The moderate width provides a balance between space efficiency and ease of handling during installation, ideal for automotive applications.

Length: 23 mm

Compact length allows for flexible placement on the circuit board, accommodating various layout requirements in automotive electronics.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive-grade standards for temperature tolerance and reliability, ensuring the product's suitability for automotive use.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Incorporating a microprocessor circuit enhances the product's processing capabilities, making it well-suited for demanding automotive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, essential for energy-efficient and reliable operation in automotive systems.

Terminal Form: BALL

Ball terminal form enables secure connections and efficient heat dissipation, ensuring stable performance and longevity in automotive environments.

Nominal Supply Voltage: 1.15 V

The nominal supply voltage provides a stable operating range for the product, contributing to consistent performance in automotive electronics.

Terminal Pitch: 0.8 mm

The fine terminal pitch allows for high-density packaging, enabling advanced functionality and optimal space utilization in automotive circuit designs.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA751BLGABCQ attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B760

Length:

23 mm

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA751BLGABCQ Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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