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MTFC4GLDDQ-4MIT

Micron Technology

MTFC4GLDDQ-4MIT by Micron Technology

MTFC4GLDDQ-4MIT by Micron Technology is a CMOS MICROPROCESSOR CIRCUIT with 100 terminals in a GRID ARRAY, LOW PROFILE package. It operates b/w -40 to 85 °C with supply voltage range of 2.7V to 3.6V, making it ideal for industrial applications requiring high performance and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

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Vyrian

USA . 7,201 parts In-Stock

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Cyclops Electronics Ltd

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Digiode

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Chip Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Nova Conductors

Japan . 23 parts In-Stock

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Sensible Micro Corp

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NexGen Digital

USA . 7 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 3 parts In-Stock

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North Shore Components

USA . 2 parts In-Stock

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Prism Electronics

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Semicontronic

India . 928 parts In-Stock

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$6.000

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$5.850

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$5.820

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AZTECH Wire

Italy . 767 parts In-Stock

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$17.057

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Aztec Data Supply Inc.

USA . 4,330 parts In-Stock

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$25.860

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Ampacity Inc.

Singapore . 1,453 parts In-Stock

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Corohmni

South Africa . 505 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,223 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

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Continental Prestige Electronics

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Corphita

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Microchip USA

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Argo Parts USA

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Bastille Electronics

Australia . 37 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Computer Components Inc. - USA

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Overview

Discover the unparalleled quality and reliability of Micron Technology's MTFC4GLDDQ-4MIT. As a leader in the industry, Micron Technology delivers cutting-edge solutions for a wide range of applications, including Other Function uPs,uCs & Peripheral ICs. With a focus on value and innovation, this product offers customers unmatched performance and efficiency. Experience the benefits of advanced technology and superior craftsmanship with Micron Technology's MTFC4GLDDQ-4MIT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the internal components of the product.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly of the product onto circuit boards.

Maximum Supply Voltage: 3.6 V

Can handle higher voltage inputs, providing flexibility in power supply options.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy integration into existing designs.

No. of Terminals: 100

Provides ample connections for various external components and peripherals.

Package Style (Meter): GRID ARRAY, LOW PROFILE

Low profile design helps in saving space and reducing overall height of the product.

Minimum Supply Voltage: 2.7 V

Can operate efficiently even at low voltage levels, ensuring stable performance.

Maximum Operating Temperature: 85 °C

Can withstand high operating temperatures, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold conditions, expanding the range of applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

These materials provide good conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and solder the product onto circuit boards.

Maximum Seated Height: 1.4 mm

Low seated height contributes to a compact overall product design.

Width: 14 mm

Compact width allows for efficient usage of space on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration during assembly process.

Peak Reflow Temperature °C: 260

Can endure high reflow temperatures during the soldering process without damage.

Length: 18 mm

Optimal length for fitting into various electronic devices without occupying too much space.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial settings where temperature fluctuations are common.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Inclusion of microprocessor circuit enhances the capabilities and performance of the product.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity for efficient operation.

Terminal Form: BALL

Ball terminal form facilitates better connections and soldering during installation.

Nominal Supply Voltage: 3.3 V

Stable supply voltage for consistent performance and compatibility with common power sources.

Terminal Pitch: 1 mm

Optimal terminal pitch for ease of PCB layout and interconnection with other components.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MTFC4GLDDQ-4MIT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

MTFC4GLDDQ-4MIT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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