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MTFC64GJVDN-4MIT

Micron Technology

MTFC64GJVDN-4MIT by Micron Technology

MTFC64GJVDN-4MIT by Micron Technology is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -40 to 85 °C, with supply voltage range of 1.65V to 1.95V. This low profile, fine pitch GRID ARRAY package is ideal for industrial applications requiring high performance uPs and uCs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 22,000 parts In-Stock

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Vyrian

USA . 3,982 parts In-Stock

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Digiode

USA . 1,690 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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AZTECH Wire

Italy . 266 parts In-Stock

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$17.620

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Corohmni

South Africa . 789 parts In-Stock

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$19.149

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Ampacity Inc.

Singapore . 1,548 parts In-Stock

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$22.000

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Argo Parts USA

USA . 3,528 parts In-Stock

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Continental Prestige Electronics

USA . 3,304 parts In-Stock

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Corphita

USA . 1,861 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Microchip USA

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Overview

Experience the cutting-edge technology of Micron Technology with the MTFC64GJVDN-4MIT. This high-quality product offers unrivaled performance and reliability in a wide range of applications. From microprocessor circuits to other function uPs and uCs, this versatile component ensures seamless operation and maximum efficiency. With superior manufacturing processes and top-notch materials, Micron Technology delivers value and benefits that exceed expectations. Upgrade your systems with the MTFC64GJVDN-4MIT and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

The surface mount feature allows for easy and quick installation of the product on a circuit board.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage provides flexibility in power supply options for the product.

Package Shape: RECTANGULAR

The rectangular shape makes the product space-efficient and easy to integrate into various electronic devices.

No. of Terminals: 169

The high number of terminals allows for versatile connectivity options with other components.

Package Style: GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array, low profile, and fine pitch design make the product suitable for compact electronic devices with limited space.

Minimum Supply Voltage: 1.65 V

The low minimum supply voltage ensures efficient power consumption and compatibility with low-power applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range allows the product to function reliably in various environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the product can operate in extreme cold environments without issues.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper provides excellent conductivity and corrosion resistance for long-term performance.

Terminal Position: BOTTOM

The bottom terminal position allows for easy connection with other components on the circuit board.

Maximum Seated Height: 1.4 mm

The low maximum seated height helps in keeping the overall profile of the product compact and space-efficient.

Width: 14 mm

The narrow width of 14 mm enables the product to fit into tight spaces within electronic devices.

Length: 18 mm

The short length of 18 mm contributes to the compact form factor of the product, making it ideal for small-scale applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the product can withstand harsh operating conditions typically found in industrial environments.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The use of a microprocessor circuit as a peripheral IC enhances the product's processing capabilities and functionality.

Technology: CMOS

The CMOS technology utilized in the product offers low power consumption and high noise immunity for efficient operation.

Terminal Form: BALL

The ball terminal form provides a reliable and secure connection between the product and other components on the circuit board.

Nominal Supply Voltage: 1.8 V

The nominal supply voltage of 1.8 V ensures stable and consistent power supply to the product for reliable performance.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5 mm enables high-density mounting of the product on the circuit board, saving space and enhancing connectivity.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MTFC64GJVDN-4MIT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 VOLTS

JESD-30 Code:

R-PBGA-B169

JESD-609 Code:

e1

Length:

18 mm

No. of Terminals:

169

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.65 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

14 mm

Peripheral IC Type:

Trade Compliance

MTFC64GJVDN-4MIT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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