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MTFC4GMDEA-4MIT

Micron Technology

MTFC4GMDEA-4MIT by Micron Technology

MTFC4GMDEA-4MIT by Micron Technology is a rectangular, surface mount microprocessor circuit with 153 terminals. It operates at a temperature range of -40 to 85 °C and has a max supply voltage of 1.95 V. This IC is commonly used in industrial applications requiring a very thin profile and fine pitch package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,194 parts In-Stock

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Digiode

USA . 1,295 parts In-Stock

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Vyrian

USA . 773 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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ComSIT Distribution GmbH

Germany . 10 parts In-Stock

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Ampacity Inc.

Singapore . 594 parts In-Stock

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$16.000

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594

$16.000

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AZTECH Wire

Italy . 355 parts In-Stock

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$19.443

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$19.443

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Semicontronic

India . 1,146 parts In-Stock

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$35.000

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$34.125

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$33.950

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Corohmni

South Africa . 1,074 parts In-Stock

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$83.588

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Perfect Parts

USA . 13,662 parts In-Stock

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Kepictronics

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S.R.D Solutions

India . 6,000 parts In-Stock

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Continental Prestige Electronics

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A-Z Elektronik GmbH

Germany . 5,639 parts In-Stock

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Corphita

USA . 1,525 parts In-Stock

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Futuretech Components

Singapore . 952 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 57 parts In-Stock

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Infinite Electronics LLP (Excess)

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Overview

Discover the MTFC4GMDEA-4MIT by Micron Technology, the ultimate solution for all your uPs, uCs, and Peripheral IC needs. With its top-notch quality and advanced manufacturing techniques, Micron Technology ensures unparalleled performance and reliability. This versatile product finds applications in various industries, from consumer electronics to industrial automation. Experience the value this product brings with its high-speed data processing, low power consumption, and compact design. Say goodbye to technical limitations and embrace the benefits of the MTFC4GMDEA-4MIT – efficiency, innovation, and endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the internal components of the IC, ensuring long-term reliability.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, reducing production time and costs.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage allows for versatile usage in a variety of applications without the risk of damage.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into standard circuit board layouts, optimizing space and functionality.

No. of Terminals: 153

The high number of terminals provides a wide range of connectivity options, accommodating complex circuit designs and enabling advanced functionality.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array style with a very thin profile and fine pitch enables high-density mounting on circuit boards, maximizing functionality in a compact space.

Minimum Supply Voltage: 1.65 V

The low minimum supply voltage allows for efficient power consumption and compatibility with a variety of power sources.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance in harsh environmental conditions, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for operation in extreme cold environments without sacrificing performance and reliability.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish provides excellent conductivity and corrosion resistance, ensuring stable connections for efficient operation.

Terminal Position: BOTTOM

The bottom terminal position simplifies the assembly process and improves heat dissipation, enhancing overall performance and reliability.

Maximum Seated Height: 0.8 mm

The low maximum seated height allows for space-saving installation in slim devices and compact electronic systems.

Width: 11.5 mm

The compact width of the IC enables versatile placement on circuit boards and compatibility with various device designs.

Length: 13 mm

The moderate length of the IC provides a balanced form factor for efficient integration and versatile usage in different electronic applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade certification ensures reliable performance in demanding environments, making it suitable for rugged applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The microprocessor circuit facilitates advanced computing capabilities and data processing functions, enhancing the overall performance and versatility of the IC.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed operation, making the IC energy-efficient and suitable for battery-powered devices.

Terminal Form: BALL

The ball terminal form provides reliable solder connections and efficient heat dissipation, ensuring stable performance under various operating conditions.

Nominal Supply Voltage: 1.8 V

The nominal supply voltage provides a balanced power input for optimal performance and compatibility with standard power sources.

Terminal Pitch: 0.5 mm

The fine terminal pitch allows for high-density mounting and precise connections, enabling complex circuit designs and optimized functionality.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MTFC4GMDEA-4MIT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 VOLTS

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.65 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

11.5 mm

Peripheral IC Type:

Trade Compliance

MTFC4GMDEA-4MIT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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