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MTFC8GLVEA-4MIT

Micron Technology

MTFC8GLVEA-4MIT by Micron Technology

MTFC8GLVEA-4MIT by Micron Technology is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -40 to 85 °C, with supply voltage range of 1.65V to 1.95V. This IC has 153 terminals in a GRID ARRAY package suitable for industrial applications.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Chip Stock

USA . 22,400 parts In-Stock

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Vyrian

USA . 3,801 parts In-Stock

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Digiode

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PC Components Company LLC

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Bristol Electronics

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Nova Conductors

Japan . 10 parts In-Stock

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Sunrise Surplus Inc.

USA . 4 parts In-Stock

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AZTECH Wire

Italy . 758 parts In-Stock

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Ampacity Inc.

Singapore . 540 parts In-Stock

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Semicontronic

India . 1,027 parts In-Stock

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Corohmni

South Africa . 2,562 parts In-Stock

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Argo Parts USA

USA . 4,744 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Bastille Electronics

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Microchip USA

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Corphita

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Overview

Upgrade your electronic devices with the MTFC8GLVEA-4MIT by Micron Technology, a top-of-the-line microprocessor circuit that guarantees superior performance and reliability. Micron Technology is renowned for its cutting-edge technology and innovative solutions, making this product a must-have for any application requiring precision and efficiency. With a low minimum supply voltage and industrial-grade temperature rating, this Microprocessor Circuit offers unmatched value and benefits to customers looking to enhance their products. Experience the advantages of Micron Technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and resistance to environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into electronic devices, saving space and reducing assembly complexity.

Maximum Supply Voltage: 1.95 V

With a maximum supply voltage of 1.95V, the product is suitable for low power applications, helping to conserve energy.

Package Shape: RECTANGULAR

Rectangular shape ensures compatibility with standard mounting and layout configurations, facilitating easy placement on circuit boards.

No. of Terminals: 153

Having 153 terminals provides ample connectivity options for various input and output functions, making the product versatile.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Grid array with a very thin profile and fine pitch design enhances signal integrity and reduces crosstalk, ensuring reliable performance in high-frequency applications.

Minimum Supply Voltage: 1.65 V

Low minimum supply voltage of 1.65V allows for operation in low-power scenarios, contributing to energy efficiency and extended battery life.

Maximum Operating Temperature: 85°C

High maximum operating temperature tolerance of 85°C ensures reliability in challenging thermal conditions, making the product suitable for industrial use.

Minimum Operating Temperature: -40°C

Wide range of minimum operating temperature (-40°C) makes the product suitable for use in extreme environments or varying climate conditions.

Terminal Finish: TIN SILVER COPPER

Terminal finish of Tin Silver Copper provides excellent conductivity and corrosion resistance, ensuring stable electrical connections over time.

Terminal Position: BOTTOM

Bottom terminal position facilitates efficient heat dissipation and easy PCB layout, optimizing the overall performance of the product.

Maximum Seated Height: 0.8 mm

Low maximum seated height of 0.8mm allows for compact design integration, saving space and enabling sleek electronic device designs.

Width: 11.5 mm

Narrow width of 11.5mm enables easy placement on PCBs with limited space, enhancing flexibility in electronic system design.

Length: 13 mm

Moderate length of 13mm provides a balance between size and functionality, making the product suitable for various electronic applications.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures reliable performance in harsh operating conditions commonly found in industrial settings.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Incorporating a microprocessor circuit as the peripheral IC type allows for advanced processing capabilities and enhanced functionality in electronic devices.

Technology: CMOS

CMOS technology provides low power consumption, high noise immunity, and fast switching speeds, making the product energy-efficient and reliable.

Terminal Form: BALL

Ball terminal form offers high contact reliability and robustness, ensuring stable connections even in the presence of mechanical stress or vibrations.

Nominal Supply Voltage: 1.8 V

Nominal supply voltage of 1.8V strikes a balance between power efficiency and performance, making the product suitable for a wide range of applications.

Terminal Pitch: 0.5 mm

With a terminal pitch of 0.5mm, the product allows for high-density mounting and fine-pitch assembly, enabling compact and efficient circuit designs.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MTFC8GLVEA-4MIT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 VOLTS

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.65 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

11.5 mm

Peripheral IC Type:

Trade Compliance

MTFC8GLVEA-4MIT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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