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MTFC4GMVEA-4MIT

Micron Technology

MTFC4GMVEA-4MIT by Micron Technology

MTFC4GMVEA-4MIT by Micron Technology is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -40 to 85 °C and has a supply voltage range of 1.65V to 1.95V, making it ideal for INDUSTRIAL applications requiring high performance in a compact GRID ARRAY package style.

Median Price

$6.210

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

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$6.210

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100

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Digiode

USA . 1,004 parts In-Stock

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1,004

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Vyrian

USA . 410 parts In-Stock

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410

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Elcom Components

USA . 82 parts In-Stock

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82

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BCID Electronics Ltd.

Israel . 10 parts In-Stock

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10

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Bristol Electronics

USA . 4 parts In-Stock

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Atlantic Semiconductor

USA . 4 parts In-Stock

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Executive Electronics, Inc.

USA . 2 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 282 parts In-Stock

1+ parts

$7.000

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$7.000

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AZTECH Wire

Italy . 555 parts In-Stock

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$12.778

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555

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Corohmni

South Africa . 2,215 parts In-Stock

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$44.721

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$44.721

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Aztec Data Supply Inc.

USA . 521 parts In-Stock

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$82.330

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Continental Prestige Electronics

USA . 3,823 parts In-Stock

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Argo Parts USA

USA . 3,170 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,804 parts In-Stock

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Microchip USA

USA . 1,087 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$6.086

1k+ parts

$5.900

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$5.775

1,000

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$6.086

$5.900

$5.775

Futuretech Components

Singapore . 750 parts In-Stock

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750

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Perfect Parts

USA . 13 parts In-Stock

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Overview

Elevate your electronic devices to the next level with the MTFC4GMVEA-4MIT by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers exceptional quality and reliability in their products. The category of Other Function uPs,uCs & Peripheral ICs offers versatile applications for a wide range of devices. Experience the value of seamless performance, efficient power consumption, and cutting-edge technology that the MTFC4GMVEA-4MIT provides. Trust Micron Technology to enhance your devices with top-notch quality and innovative solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and cost-effective.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage allows for more flexibility in power supply options.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into existing electronic systems.

No. of Terminals: 153

Large number of terminals allows for more connectivity options and functionality.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Grid array style with fine pitch and thin profile saves space on the circuit board.

Minimum Supply Voltage: 1.65 V

Lower minimum supply voltage allows for operation in a wider range of power conditions.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold environments.

Terminal Finish: TIN SILVER COPPER

Terminal finish with multiple metals ensures good conductivity and longevity.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to solder onto circuit boards.

Maximum Seated Height: 0.8 mm

Low maximum seated height allows for slim and compact product design.

Width: 11.5 mm

Narrow width saves space on the circuit board.

Length: 13 mm

Short length allows for compact integration into electronic systems.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures reliable performance in harsh conditions.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Microprocessor circuit type allows for advanced computing capabilities within the product.

Technology: CMOS

CMOS technology provides low power consumption and high-speed processing.

Terminal Form: BALL

Ball terminal form allows for reliable electrical connections.

Nominal Supply Voltage: 1.8 V

Stable nominal supply voltage ensures consistent performance.

Terminal Pitch: 0.5 mm

Fine terminal pitch enables high-density packaging on the circuit board.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MTFC4GMVEA-4MIT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 VOLTS

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.65 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

11.5 mm

Peripheral IC Type:

Trade Compliance

MTFC4GMVEA-4MIT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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