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MTFC64GJDDN-4MIT

Micron Technology

MTFC64GJDDN-4MIT by Micron Technology

MTFC64GJDDN-4MIT by Micron Technology is a MICROPROCESSOR CIRCUIT with CMOS technology. It operates b/w -40 to 85 °C and has a supply voltage range of 1.65V to 1.95V, making it ideal for industrial applications requiring low profile, fine pitch GRID ARRAY package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 19,400 parts In-Stock

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Vyrian

USA . 6,197 parts In-Stock

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Digiode

USA . 977 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 449 parts In-Stock

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$9.842

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449

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Ampacity Inc.

Singapore . 677 parts In-Stock

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$25.000

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677

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Corohmni

South Africa . 972 parts In-Stock

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$67.155

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Aztec Data Supply Inc.

USA . 1,020 parts In-Stock

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$71.532

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Argo Parts USA

USA . 2,463 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 1,697 parts In-Stock

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Continental Prestige Electronics

USA . 1,131 parts In-Stock

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Microchip USA

USA . 371 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 14 parts In-Stock

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Overview

Discover the innovative MTFC64GJDDN-4MIT by Micron Technology, a cutting-edge microprocessor circuit designed to revolutionize your electronic devices. With a sleek rectangular package style and top-of-the-line TIN SILVER COPPER terminal finish, this product ensures superior performance and reliability in industrial environments. Whether you're upgrading your smart home appliances or enhancing your automotive systems, the MTFC64GJDDN-4MIT guarantees seamless integration and optimal functionality. Experience the next level of technology with Micron Technology's exceptional quality and unmatched efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the IC, making it suitable for a variety of applications.

Surface Mount: YES

Surface mount technology offers efficient and reliable assembly, saving space on PCBs and allowing for high-density designs.

Maximum Supply Voltage: 1.95 V

Allows for operation with a higher voltage input while still within a safe limit, providing flexibility in power supply options.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and allows for easy placement on the PCB, optimizing board layout.

No. of Terminals: 169

A high number of terminals enables connectivity with various external components, expanding the functionality of the IC.

Minimum Operating Temperature: -40 °C

Capable of operating in low temperature environments, making it suitable for industrial applications that may experience extreme cold.

Nominal Supply Voltage: 1.8 V

Stable nominal supply voltage ensures consistent performance and reliable operation of the IC.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the IC.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MTFC64GJDDN-4MIT attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 VOLTS

JESD-30 Code:

R-PBGA-B169

JESD-609 Code:

e1

Length:

18 mm

No. of Terminals:

169

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.65 V

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

14 mm

Peripheral IC Type:

Trade Compliance

MTFC64GJDDN-4MIT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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