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DRA744BJGABCRQ1

Texas Instruments

DRA744BJGABCRQ1 by Texas Instruments

DRA744BJGABCRQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 64-bit External Data Bus Width, operating at 32 MHz. It is designed for AUTOMOTIVE applications, featuring a max supply voltage of 1.2 V and a temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,971 parts In-Stock

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Digiode

USA . 4,885 parts In-Stock

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Native Components

USA . 691 parts In-Stock

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$4.925

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691

$4.925

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AZTECH Wire

Italy . 272 parts In-Stock

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$14.753

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One Stop Electronics

USA . 1,071 parts In-Stock

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$15.000

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$15.000

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Parana Technologies

USA . 166 parts In-Stock

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$67.733

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$67.733

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DigiPath Technology Company

USA . 222 parts In-Stock

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$74.583

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$68.616

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222

$74.583

$68.616

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ChromeModa Solutions

Germany . 5,652 parts In-Stock

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$76.105

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$62.406

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$62.406

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IDEA Electronic Components Group

UK . 1,997 parts In-Stock

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$76.105

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$72.300

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$68.494

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Corohmni

South Africa . 1,916 parts In-Stock

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$78.691

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Component Stockers USA

USA . 731 parts In-Stock

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$99.990

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Corphita

USA . 4,518 parts In-Stock

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Microchip USA

USA . 2,747 parts In-Stock

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Northwest PG Solutions

USA . 813 parts In-Stock

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Overview

Unlock the power of automotive-grade technology with the DRA744BJGABCRQ1 by Texas Instruments. This high-quality microprocessor circuit offers unparalleled performance and reliability, making it ideal for a wide range of applications. With a wide external data bus width of 64 and compatibility with CAN, I2C, PCI, SPI, UART, and USB buses, this versatile device is perfect for automotive systems, industrial controls, and more. Trust in Texas Instruments to deliver cutting-edge solutions that meet your needs and exceed your expectations. Elevate your projects with the DRA744BJGABCRQ1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Supply Voltage: 1.2 V

Suitable for low power applications, saving energy.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability.

Package Shape: SQUARE

Optimizes space on the circuit board.

No. of Terminals: 760

Provides ample connectivity options for various functions.

Package Style (Meter): GRID ARRAY, FINE PITCH

Enhances signal integrity and performance.

Minimum Supply Voltage: 1.11 V

Allows for operation in low voltage conditions.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

Provides corrosion resistance and excellent conductivity.

Terminal Position: BOTTOM

Facilitates easy connection to the circuit board.

Maximum Seated Height: 2.96 mm

Allows for compact design of electronic devices.

Width: 23 mm

Optimal size for integration into various applications.

External Data Bus Width: 64

Enhances data processing capabilities.

Maximum Clock Frequency: 32 MHz

Enables fast execution of instructions.

Maximum Time At Peak Reflow Temperature (s): 30

Supports efficient soldering process during manufacturing.

Peak Reflow Temperature °C: 250

Withstands high temperature solder reflow process.

Length: 23 mm

Balances the overall dimensions of the product.

Temperature Grade: AUTOMOTIVE

Meets automotive industry standards for performance and reliability.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Incorporates advanced processing capabilities for diverse applications.

Technology: CMOS

Offers low power consumption and high speed operation.

Terminal Form: BALL

Facilitates reliable connection on the circuit board.

Nominal Supply Voltage: 1.15 V

Optimal voltage level for efficient operation.

Bus Compatibility: CAN; I2C; PCI; SPI; UART; USB

Supports various communication protocols for connectivity.

Terminal Pitch: 0.8 mm

Optimizes signal integrity and connectivity on the circuit board.

Moisture Sensitivity Level (MSL): 3

Provides protection against moisture damage during operation.

Speed: 1000 rpm

Supports high-speed data processing and operations.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA744BJGABCRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; PCI; SPI; UART; USB

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

64

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Speed:

1000 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA744BJGABCRQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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