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DRA754BJGABCQ1

Texas Instruments

DRA754BJGABCQ1 by Texas Instruments

DRA754BJGABCQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 760 terminals in a GRID ARRAY, FINE PITCH package. It operates b/w -40 to 125 °C and has a supply voltage range of 1.11V to 1.2V, making it ideal for AUTOMOTIVE applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,479 parts In-Stock

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Digiode

USA . 2,142 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 328 parts In-Stock

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$7.669

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$7.669

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One Stop Electronics

USA . 1,313 parts In-Stock

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$9.000

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Parana Technologies

USA . 1,926 parts In-Stock

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$63.566

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Corohmni

South Africa . 2,547 parts In-Stock

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$69.988

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ChromeModa Solutions

Germany . 2,333 parts In-Stock

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$71.422

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$58.566

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IDEA Electronic Components Group

UK . 296 parts In-Stock

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$71.422

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$67.851

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$64.280

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Corphita

USA . 3,315 parts In-Stock

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DigiPath Technology Company

USA . 2,232 parts In-Stock

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Northwest PG Solutions

USA . 1,334 parts In-Stock

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$3.969

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Native Components

USA . 709 parts In-Stock

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Overview

Unlock the power of innovation with the DRA754BJGABCQ1 by Texas Instruments, a cutting-edge microprocessor circuit designed for automotive applications. With high-quality materials and advanced technology, this product offers unparalleled performance and reliability. From enhancing vehicle safety systems to optimizing engine efficiency, this versatile device provides endless possibilities for your automotive projects. Trust in Texas Instruments to deliver exceptional value and benefits to meet all your needs. Elevate your designs with the DRA754BJGABCQ1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the IC, making it suitable for various environments.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly onto circuit boards, saving time and reducing production costs.

Maximum Supply Voltage: 1.2 V

The maximum supply voltage of 1.2V ensures safe operation and prevents damage to the IC under normal operating conditions.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the IC meets the rigorous quality and reliability standards required for automotive applications.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the circuit board and facilitates heat dissipation.

No. of Terminals: 760

The high number of terminals provides connectivity for a wide range of input and output signals, making the IC versatile and suitable for complex applications.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array with fine pitch packaging style offers high density integration and precise alignment on the circuit board, improving performance and reliability.

Minimum Supply Voltage: 1.11 V

The minimum supply voltage of 1.11V ensures reliable operation even under low voltage conditions, making the IC suitable for power-sensitive applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures stable performance in extreme temperature conditions, making the IC reliable for automotive and industrial environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the IC to function in cold environments without compromising performance, making it suitable for a wide range of applications.

Terminal Position: BOTTOM

The bottom terminal position provides convenient access for soldering and enables secure attachment to the circuit board, ensuring reliable connections.

Maximum Seated Height: 2.96 mm

The maximum seated height of 2.96mm allows for compact and slim designs, saving space in electronic devices and improving overall aesthetics.

Width: 23 mm

The width of 23mm provides a compact form factor, making the IC suitable for applications with limited space constraints.

Length: 23 mm

The length of 23mm offers a balanced size profile, allowing for easy integration into various electronic systems.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures that the IC can withstand the harsh operating conditions found in automotive environments, making it a reliable choice for automotive applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The microprocessor circuit type enables the IC to perform complex computations and data processing tasks, making it suitable for advanced computing applications.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the IC energy-efficient and reliable in noise-sensitive environments.

Terminal Form: BALL

The ball terminal form provides secure connections and allows for easy rework during manufacturing or maintenance processes, improving overall reliability.

Nominal Supply Voltage: 1.15 V

The nominal supply voltage of 1.15V ensures stable and consistent operation, maintaining performance and functionality over time.

Terminal Pitch: 0.8 mm

The small terminal pitch of 0.8mm offers high density integration and precise signal routing, enhancing performance and reliability in complex electronic systems.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA754BJGABCQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B760

Length:

23 mm

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA754BJGABCQ1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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