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DRA756BPGABCRQ1

Texas Instruments

DRA756BPGABCRQ1 by Texas Instruments

The Texas Instruments DRA756BPGABCRQ1 is an AEC-Q100 compliant microprocessor circuit with CMOS technology. It features a peak reflow temperature of 250°C, 30s max time at peak reflow temp, and TIN SILVER COPPER terminal finish. Ideal for automotive applications requiring high-performance processing capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,109 parts In-Stock

1+ parts

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3,109

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Digiode

USA . 2,066 parts In-Stock

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2,066

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 817 parts In-Stock

1+ parts

$0.119

100+ parts

-

1k+ parts

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10k+ parts

$0.115

817

$0.119

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-

$0.115

Northwest PG Solutions

USA . 253 parts In-Stock

1+ parts

$0.131

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-

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$0.116

253

$0.131

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-

$0.116

AZTECH Wire

Italy . 512 parts In-Stock

1+ parts

$16.492

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-

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512

$16.492

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Corohmni

South Africa . 1,248 parts In-Stock

1+ parts

$20.464

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1,248

$20.464

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One Stop Electronics

USA . 318 parts In-Stock

1+ parts

$30.000

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318

$30.000

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Parana Technologies

USA . 279 parts In-Stock

1+ parts

$34.625

100+ parts

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279

$34.625

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DigiPath Technology Company

USA . 800 parts In-Stock

1+ parts

$38.126

100+ parts

$35.076

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800

$38.126

$35.076

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IDEA Electronic Components Group

UK . 2,358 parts In-Stock

1+ parts

$38.904

100+ parts

$36.959

1k+ parts

$35.014

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2,358

$38.904

$36.959

$35.014

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ChromeModa Solutions

Germany . 376 parts In-Stock

1+ parts

$38.904

100+ parts

$31.901

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376

$38.904

$31.901

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Corphita

USA . 1,112 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the DRA756BPGABCRQ1 by Texas Instruments, a top-tier manufacturer known for delivering superior quality products. This innovative MICROPROCESSOR CIRCUIT offers unmatched reliability and performance, making it ideal for a wide range of applications. Designed with AEC-Q100 screening level and TIN SILVER COPPER terminal finish, this CMOS technology-based product is built to last. Experience seamless operation and enhanced functionality with the DRA756BPGABCRQ1, setting new standards in the industry. Elevate your projects and streamline your operations with this exceptional solution from Texas Instruments.

Feature Benefit Bullets

Screening Level - AEC-Q100

This product is rated for automotive applications, ensuring high reliability and performance in harsh operating conditions.

Terminal Finish - TIN SILVER COPPER

The use of this terminal finish provides good conductivity, corrosion resistance, and solderability for a reliable connection.

Maximum Time At Peak Reflow Temperature (s) - 30

This short reflow time helps in preventing thermal damage to the components during assembly, ensuring product longevity.

Peak Reflow Temperature °C - 250

The high peak reflow temperature allows for a robust soldering process, resulting in strong and durable connections.

Peripheral IC Type - MICROPROCESSOR CIRCUIT

The use of a microprocessor circuit enhances the functionality and processing power of the product, making it suitable for complex applications.

Technology - CMOS

The CMOS technology offers low power consumption and high noise immunity, improving the efficiency and reliability of the product.

Moisture Sensitivity Level (MSL) - 3

With a moisture sensitivity level of 3, the product can withstand moderate exposure to moisture during storage and handling.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA756BPGABCRQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

3

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Maximum Time At Peak Reflow Temperature (s):

30

Peripheral IC Type:

Trade Compliance

DRA756BPGABCRQ1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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