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DRA745BLGABCQ1

Texas Instruments

DRA745BLGABCQ1 by Texas Instruments

DRA745BLGABCQ1 by Texas Instruments is a MICROPROCESSOR CIRCUIT with 64-bit External Data Bus Width, operating at 32 MHz. It is designed for AUTOMOTIVE applications, featuring a max supply voltage of 1.2 V and a temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,484 parts In-Stock

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Digiode

USA . 2,534 parts In-Stock

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Native Components

USA . 552 parts In-Stock

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$1.736

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552

$1.736

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Northwest PG Solutions

USA . 2,059 parts In-Stock

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$1.910

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$1.910

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One Stop Electronics

USA . 790 parts In-Stock

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$4.000

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790

$4.000

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AZTECH Wire

Italy . 882 parts In-Stock

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$15.977

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882

$15.977

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Corohmni

South Africa . 3,023 parts In-Stock

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$46.245

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Parana Technologies

USA . 1,229 parts In-Stock

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$76.634

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DigiPath Technology Company

USA . 1,205 parts In-Stock

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$84.384

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ChromeModa Solutions

Germany . 1,619 parts In-Stock

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$86.106

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$70.607

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IDEA Electronic Components Group

UK . 1,136 parts In-Stock

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$86.106

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$81.801

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$77.495

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$77.495

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A-Z Elektronik GmbH

Germany . 4,806 parts In-Stock

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Corphita

USA . 3,358 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,204 parts In-Stock

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Microchip USA

USA . 2,844 parts In-Stock

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Authorized Procurement Solutions

USA . 45 parts In-Stock

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Overview

Discover the innovative DRA745BLGABCQ1 by Texas Instruments, a top-quality MICROPROCESSOR CIRCUIT designed for automotive applications. With advanced CMOS technology and a wide range of bus compatibility including CAN, I2C, SPI, UART, and USB, this product offers unparalleled performance and reliability. Backed by Texas Instruments' renowned reputation for excellence, this IC provides customers with a seamless solution for their automotive electronics needs. Upgrade your systems today with the DRA745BLGABCQ1 and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and protection for the internal components of the product.

Surface Mount: YES

Surface mount technology simplifies the assembly process and allows for more compact designs.

Maximum Supply Voltage: 1.2 V

Operates efficiently within a standard supply voltage range, ensuring compatibility with various power sources.

Screening Level: AEC-Q100

AEC-Q100 qualification ensures automotive-grade reliability and performance in harsh environments.

Package Shape: SQUARE

Square package shape facilitates easier PCB layout and component placement.

No. of Terminals: 760

High number of terminals allows for versatile connectivity options and functionality.

Package Style (Meter): GRID ARRAY, FINE PITCH

Grid array fine pitch package style enables high-density mounting and interconnection, optimizing space usage.

Minimum Supply Voltage: 1.11 V

Low minimum supply voltage requirements contribute to energy efficiency and reduced power consumption.

Maximum Operating Temperature: 125 °C

High maximum operating temperature range ensures stable performance even in extreme conditions.

Minimum Operating Temperature: -40 °C

Wide minimum operating temperature range allows for reliable operation in cold environments.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish provides enhanced conductivity and corrosion resistance.

Width: 23 mm

Compact width dimension facilitates integration into tight spaces and smaller electronic devices.

External Data Bus Width: 64

64-bit external data bus width enables high-speed data processing and efficient communication.

Maximum Clock Frequency: 32 MHz

High maximum clock frequency allows for fast and responsive operation of the product.

Maximum Time At Peak Reflow Temperature (s): 30

Adequate time at peak reflow temperature ensures proper soldering and rework during assembly.

Peak Reflow Temperature °C: 250

High peak reflow temperature tolerance provides reliability in the soldering process.

Length: 23 mm

Matching length dimension for optimized form factor and design compatibility.

Temperature Grade: AUTOMOTIVE

Automotive temperature grade ensures the product's reliability and functionality in automotive applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Microprocessor circuit type enables advanced computing capabilities and multiple peripheral integrations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Terminal Form: BALL

Ball terminal form enhances connectivity reliability and ease of soldering during assembly.

Nominal Supply Voltage: 1.15 V

Stable nominal supply voltage ensures consistent performance and compatibility with power sources.

Bus Compatibility: CAN; I2C; SPI; UART; USB

Multiple bus compatibility options allow for seamless integration with various communication protocols.

Terminal Pitch: 0.8 mm

Fine terminal pitch enables high-density mounting and precise interconnection for enhanced functionality.

Moisture Sensitivity Level (MSL): 3

MSL level 3 indicates moderate sensitivity to moisture, requiring standard handling procedures during assembly and storage.

Speed: 1176 rpm

Operates at a moderate speed of 1176 rpm, suitable for various applications requiring consistent performance.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA745BLGABCQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; SPI; UART; USB

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

64

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Speed:

1176 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA745BLGABCQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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