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DRA756BPGABCQ1

Texas Instruments

DRA756BPGABCQ1 by Texas Instruments

The Texas Instruments DRA756BPGABCQ1 is a MICROPROCESSOR CIRCUIT with 64-bit External Data Bus Width, operating at 32 MHz. Designed for AUTOMOTIVE applications, it features a max supply voltage of 1.2 V and can withstand temperatures from -40 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,846 parts In-Stock

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7,846

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Digiode

USA . 4,424 parts In-Stock

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4,424

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 370 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

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$0.343

370

$0.358

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-

$0.343

Northwest PG Solutions

USA . 2,217 parts In-Stock

1+ parts

$0.393

100+ parts

-

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$0.347

2,217

$0.393

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$0.347

One Stop Electronics

USA . 1,422 parts In-Stock

1+ parts

$18.000

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1,422

$18.000

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AZTECH Wire

Italy . 207 parts In-Stock

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$19.359

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207

$19.359

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Corohmni

South Africa . 979 parts In-Stock

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$19.445

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979

$19.445

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Parana Technologies

USA . 1,682 parts In-Stock

1+ parts

$47.727

100+ parts

$4,432.189

1k+ parts

$42.954

10k+ parts

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1,682

$47.727

$4,432.189

$42.954

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DigiPath Technology Company

USA . 843 parts In-Stock

1+ parts

$52.553

100+ parts

$48.349

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843

$52.553

$48.349

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ChromeModa Solutions

Germany . 5,188 parts In-Stock

1+ parts

$53.626

100+ parts

$43.973

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5,188

$53.626

$43.973

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IDEA Electronic Components Group

UK . 576 parts In-Stock

1+ parts

$53.626

100+ parts

$50.945

1k+ parts

$48.263

10k+ parts

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576

$53.626

$50.945

$48.263

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A-Z Elektronik GmbH

Germany . 7,173 parts In-Stock

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7,173

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Alle Elektronik GmbH

Germany . 4,782 parts In-Stock

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Microchip USA

USA . 2,170 parts In-Stock

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Corphita

USA . 1,525 parts In-Stock

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1,525

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Overview

Experience the superior quality and reliability of Texas Instruments with the DRA756BPGABCQ1. This versatile microprocessor circuit offers a wide range of applications in the automotive industry, providing exceptional performance and efficiency. With its advanced technology and innovative design, this product ensures optimal functionality and seamless integration. Trust Texas Instruments to deliver cutting-edge solutions that exceed your expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and helps protect the internal components from external elements.

Surface Mount: YES

Surface mount technology allows for efficient assembly processes and reduces the overall size of the product.

Maximum Supply Voltage: 1.2 V

Operates efficiently at low voltage levels, making it energy-efficient and suitable for battery-powered applications.

Minimum Supply Voltage: 1.11 V

Can operate at a wide range of voltages, providing flexibility in power supply design.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for automotive and industrial applications.

Bus Compatibility: CAN; I2C; PCI; SPI; UART; USB

Supports a wide range of communication protocols, making it versatile for various connectivity options.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA756BPGABCQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; PCI; SPI; UART; USB

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

64

JESD-30 Code:

S-PBGA-B760

JESD-609 Code:

e1

Length:

23 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

760

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.96 mm

Speed:

1500 rpm

Maximum Supply Voltage:

1.2 V

Minimum Supply Voltage:

1.11 V

Nominal Supply Voltage:

1.15 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

23 mm

Peripheral IC Type:

Trade Compliance

DRA756BPGABCQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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