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NOIV1SN016KA-GTI

Onsemi

NOIV1SN016KA-GTI by Onsemi

NOIV1SN016KA-GTI by Onsemi is an image sensor with 4.5X4.5 um pixel size, 340 MHz master clock, and 4096 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 56 dB. Ideal for applications requiring high-resolution imaging at a max supply voltage of 2 V.

Median Price

$1,184.501

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2 parts In-Stock

1+ parts

$1,052.890

100+ parts

$989.720

1k+ parts

$926.540

10k+ parts

-

2

$1,052.890

$989.720

$926.540

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Verical

USA . 2 parts In-Stock

1+ parts

$1,316.112

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2

$1,316.112

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Distributors (In-Stock)

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Digiode

USA . 1,303 parts In-Stock

1+ parts

$1,164.301

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1,303

$1,164.301

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Vyrian

USA . 8,794 parts In-Stock

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8,794

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Flip Electronics

USA . 2 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 937 parts In-Stock

1+ parts

$9.640

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-

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937

$9.640

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Corphita

USA . 1,828 parts In-Stock

1+ parts

$1,103.022

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1,828

$1,103.022

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Corohmni

South Africa . 242 parts In-Stock

1+ parts

$1,225.580

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242

$1,225.580

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Kulean Microsystems

USA . 6,883 parts In-Stock

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6,883

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SupplyDigital Components

Austria . 6,603 parts In-Stock

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TANS Electronics

Latvia . 1,461 parts In-Stock

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Problanco Electronics

Mexico . 986 parts In-Stock

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986

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UHIMA Technologies

Türkiye . 810 parts In-Stock

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810

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Overview

Elevate your imaging projects with the NOIV1SN016KA-GTI by Onsemi, a cutting-edge image sensor that promises unparalleled quality and reliability. Manufactured by industry leader Onsemi, this sensor is at the forefront of innovation in the field of image sensors. Perfect for applications requiring high-resolution imaging, this sensor offers exceptional value with its advanced technology and superior performance. Whether you're working on surveillance systems, medical imaging, or industrial automation, this product delivers unmatched benefits to meet your specific needs. Upgrade your imaging solutions today with the NOIV1SN016KA-GTI and experience the difference.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size of 4.5x4.5 um allows for high resolution images and detailed captures.

Maximum Supply Voltage: 2 V

Operates efficiently with a maximum supply voltage of 2V, ensuring stable performance.

Master Clock: 340 MHz

The high master clock speed of 340 MHz enables fast data processing and high-speed image capturing.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption and high sensitivity, making it suitable for various applications.

Dynamic Range: 56 dB

The wide dynamic range of 56 dB allows for capturing both bright and dark areas in a scene with good detail.

Array Type: FRAME

The array type being frame enables efficient image capturing and processing, making it suitable for real-time applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature ensures easy and secure installation of the image sensor on different devices.

Technical Specifications

Image Sensors NOIV1SN016KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56 dB

Frame Rate:

80 fps

Horizontal Pixel:

4096

Housing:

CERAMIC

Master Clock:

340 MHz

Mounting Feature:

Maximum Operating Current:

915 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

4096

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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