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NOIP1SE025KA-GTI

Onsemi

NOIP1SE025KA-GTI by Onsemi

NOIP1SE025KA-GTI by Onsemi is an image sensor with 5120x5120 pixels, 4.5um pixel size, and 360MHz master clock. It operates b/w -40 to 85 °C and has a dynamic range of 59dB. Ideal for high-resolution imaging applications requiring fast frame rates up to 80fps.

Median Price

$2,573.530

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 12 parts In-Stock

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$2,573.530

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12

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Digiode

USA . 1,071 parts In-Stock

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$2,467.226

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Vyrian

USA . 7,165 parts In-Stock

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Flip Electronics

USA . 6 parts In-Stock

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Corphita

USA . 1,834 parts In-Stock

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$2,337.372

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Corohmni

South Africa . 451 parts In-Stock

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$2,377.640

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TANS Electronics

Latvia . 7,949 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 1,609 parts In-Stock

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SupplyDigital Components

Austria . 1,398 parts In-Stock

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Problanco Electronics

Mexico . 815 parts In-Stock

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UHIMA Technologies

Türkiye . 422 parts In-Stock

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Authorized Procurement Solutions

USA . 100 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 59 parts In-Stock

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Overview

Capture every moment with the NOIP1SE025KA-GTI by Onsemi, a high-quality image sensor that delivers exceptional performance and clarity. Manufactured by Onsemi, a trusted name in the industry, this sensor offers unmatched reliability and precision. Ideal for a wide range of applications, this sensor is perfect for capturing stunning images with its advanced technology. Enhance your projects with the value and benefits that this sensor provides, offering customers superior quality and results. Trust in Onsemi for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Smaller pixel size allows for higher resolution images to be captured.

Maximum Supply Voltage: 1.9 V

Efficient power consumption with a low maximum supply voltage.

Master Clock: 360 MHz

High master clock frequency enables fast data processing.

Body Width: 36.1 inch

Compact design for easy integration into various applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high image quality and low power consumption.

Body Height: 3.5 mm

Low profile design for flexibility in placement and installation.

Package Shape or Style: RECTANGULAR

Standard rectangular package for easy handling and mounting.

Minimum Supply Voltage: 1.7 V

Operates efficiently at a low minimum supply voltage.

Maximum Operating Temperature: 85 °C

Wide temperature range for versatile use in different environments.

Horizontal Pixel: 5120

High horizontal pixel count for detailed and sharp image capture.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold temperatures.

Dynamic Range: 59 dB

Wide dynamic range for capturing both bright and dark areas in the image.

Vertical Pixel: 5120

High vertical pixel count for detailed and sharp image capture.

Body Length/Diameter: 43.1 mm

Compact size for easy integration and placement in various devices.

Optical Format (inch): 1.28

Standard optical format for compatibility with different lenses.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Output Interface Type: 4-WIRE INTERFACE

Versatile output interface for easy connectivity with other devices.

Frame Rate: 80 fps

High frame rate for smooth and clear video recording.

Array Type: FRAME

Frame array for organized and efficient image capture.

Sensitivity (V/lx.s): 5.8 V/lx.s

High sensitivity for capturing light and producing clear images.

Mounting Feature: THROUGH HOLE MOUNT

Secure through-hole mounting for stable and durable installation.

Technical Specifications

Image Sensors NOIP1SE025KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

80 fps

Horizontal Pixel:

5120

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1.28

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

5120

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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